Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

A method for bonding a first substrate with a second substrate by means of a connecting layer that is arranged between the substrates and that is comprised of a connecting material with the following steps: applying the connecting material to the first substrate and/or the second substrate in liquid form, and distributing the connecting material between the substrates by bringing the substrates closer and as a result forming the shape of the connecting layer with a thickness t.

According to various embodiments, systems and methods for packaging a semiconductor device are provided. The disclosure discusses a semiconductor die having a top side and a bottom side that is disposed on a lead frame. An adhesive paste is then applied to attach the semiconductor die to the lead frame such that the adhesive paste fixes the die to a portion of the lead frame. The adhesive paste may be applied directly between die and the lead frame or may be applied in conjunction with a frame tape.

According to various embodiments, systems and methods for packaging a semiconductor device are provided. The disclosure discusses a semiconductor die having a top side and a bottom side that is disposed on a lead frame. An adhesive paste is then applied to attach the semiconductor die to the lead frame such that the adhesive paste fixes the die to a portion of the lead frame. The adhesive paste may be applied directly between die and the lead frame or may be applied in conjunction with a frame tape.

The present invention provides a method of fabricating a 3D stacked IC SiP which includes: providing a first semiconductor wafer having a plurality of first dies formed thereon, each having a first wire bond pad and a first dielectric layer, at least a portion of the first wire bond pad is not covered by the first dielectric layer and constitutes an exposed area of the first die; providing a plurality of second dies, each having a second wire bond pad and a second dielectric layer, at least a portion of the second wire bond pad is not covered by the second dielectric layer and constitutes an exposed area of the second die different in size from that of the first die; aligning the second dies with the first dies and bonding the second dielectric layer to the first dielectric layer; plating the first semiconductor wafer bonded with the second dies.

The present invention provides a method of fabricating a 3D stacked IC SiP which includes: providing a first semiconductor wafer having a plurality of first dies formed thereon, each having a first wire bond pad and a first dielectric layer, at least a portion of the first wire bond pad is not covered by the first dielectric layer and constitutes an exposed area of the first die; providing a plurality of second dies, each having a second wire bond pad and a second dielectric layer, at least a portion of the second wire bond pad is not covered by the second dielectric layer and constitutes an exposed area of the second die different in size from that of the first die; aligning the second dies with the first dies and bonding the second dielectric layer to the first dielectric layer; plating the first semiconductor wafer bonded with the second dies.