Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.

A method for surface treatment of a workpiece made from a hard-brittle material comprises first blasting employing abrasive grains of higher hardness than a hardness of a base material of the workpiece for forming a three dimensional recess-protrusion profile having protrusions and recesses formed between the protrusions on a surface of the workpiece; and second blasting employing an elastic abrasive having a structure in which abrasive grains carried in and/or on an elastic body made from material with low rebound elasticity for polishing the surface of the workpiece formed with the recess-protrusion profile so as to achieve an arithmetic average roughness Ra of not greater than 1.6 m on the surface of the protrusions and the recesses on the workpiece while maintaining the recess-protrusion profile formed by the first blasting.

A monocrystalline semiconductor wafers have an average roughness R.sub.a of at most 0.8 nm at a limiting wavelength of 250 ?m, and an ESFQR.sub.avg of 8 nm or less given an edge exclusion of 1 mm. The wafers are advantageously produced by a method comprising the following steps in the indicated order: simultaneous double-side polishing of the semiconductor wafer, b) local material-removing processing of at least one part of at least one side of the semiconductor wafer using a fluid jet which contains suspended hard substance particles and which is directed onto a small region of the surface with the aid of a nozzle, wherein the nozzle is moved over that part of the surface which is to be treated in such a way that a predefined geometry parameter of the semiconductor wafer is improved, and c) polishing of the at least one surface of the semiconductor wafer.

A semiconductor device includes a first substrate having a first surface and a second surface opposite to the first surface, a shallow trench isolation in the first substrate, the shallow trench isolation having a first depth, the first depth being a distance from a bottom of the shallow trench isolation to the first surface of the first substrate, a transistor on the first surface of the first substrate, a first dielectric cap layer covering the first surface of the first substrate, a first interconnect structure on the first dielectric cap layer, a carrier substrate bonded to the first substrate through the first dielectric cap layer, a second dielectric cap layer on the second surface of the first substrate; and a through silicon via extending through the second dielectric cap layer, the shallow trench isolation, and the first dielectric cap layer, and connected to the first interconnect structure.

A method of forming a semiconductor device includes: providing a first substrate, forming at least one transistor on a first surface of the first substrate; forming a first dielectric cap layer covering the first surface of the first substrate; forming a first interconnect structure on the first dielectric cap layer; providing a carrier substrate; bonding the carrier substrate to the first substrate through the first dielectric cap layer; and from a second surface of the first substrate opposite to the first surface, thinning the first substrate to a second depth.

Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.

In one embodiment, semiconductor die are singulated from a semiconductor wafer having a layer of material by placing the semiconductor wafer onto a carrier tape with the layer of material adjacent the carrier tape, forming singulation lines through the semiconductor wafer to expose the layer of material within the singulation lines, and separating portions of the layer of material using a fluid.

Implementations of a method singulating a plurality of semiconductor die. Implementations may include: forming a pattern in a back metal layer coupled on a first side of a semiconductor substrate where the semiconductor substrate includes a plurality of semiconductor die. The method may include etching substantially through a thickness of the semiconductor substrate at the pattern in the back metal layer and jet ablating a layer of passivation material coupled to a second side of the semiconductor substrate to singulate the plurality of semiconductor die.

A heterostructure may include a substrate having a first primary surface, a second primary surface, and a diffusion layer extending a depth into the substrate from the first primary surface; and a deposition layer disposed on the second primary surface of the substrate. The heterostructure may further include an epitaxial layer disposed on the deposition layer.

A device manufacturing method according to an embodiment includes forming a film on the second surface side of a substrate having a first surface and the second surface, forming a trench in part of the substrate from the first surface side, while leaving the film to remain, and injecting a substance onto the film from the second surface side, to remove the film at the portion on the second surface side of the trench.