A method for manufacturing a semiconductor structure with power connecting structures under transistors comprises: forming a stop layer structure in a semiconductor substrate to divide the semiconductor substrate into a first substrate part and a second substrate part; forming a plurality of stop portions in the first substrate part and in proximity to an active surface; arranging the transistor elements on the active surface, the contact portions of the transistor elements corresponding to the stop portions; removing the second substrate part and the stop layer structure; forming a first patterned mask layer with first patterned openings on a bottom surface of the first substrate part, the first patterned openings corresponding to the stop portions; forming through open slots in the first substrate part and exposing the contact portions via the open slots; forming a protecting layer to cover side walls of the open slots; forming a conductive layer to cover the contacts; and forming the power connecting structures in the open slots. The method has flexibility and can improve the device performance.

Embodiments of the present disclosure describe techniques for revealing a backside of an integrated circuit (IC) device, and associated configurations. The IC device may include a plurality of fins formed on a semiconductor substrate (e.g., silicon substrate), and an isolation oxide may be disposed between the fins along the backside of the IC device. A portion of the semiconductor substrate may be removed to leave a remaining portion. The remaining portion may be removed by chemical mechanical planarization (CMP) using a selective slurry to reveal the backside of the IC device. Other embodiments may be described and/or claimed.

An object of the present invention is to provide a nanobubble-containing inorganic oxide fine particle dispersion having excellent concentration stability in a process used as an abrasive. The object is achieved by the nanobubble-containing inorganic oxide fine particle dispersion including: inorganic oxide fine particles having an average particle size of 1 to 500 nm and containing fine particles containing Ce; and nanobubbles having an average cell size of 50 to 500 nm and being at least one non-oxidizing gas selected from a group consisting of N.sub.2 and H.sub.2.

A slurry for polishing surfaces or substrates that at least partially comprise ruthenium and copper, wherein the slurry includes an alkali hydroxide, oxygenated halogen compound, and a halogen alkyl benzotriazole. The slurry may further include abrasive, acid(s), and, optionally, an alkoxylated alcohol. With these components, the slurry exhibits a high ruthenium to copper removal rate ratio.

The present disclosure describes fabricating devices with tunable gate height and effective capacitance. A method includes forming a first metal gate stack in a dummy region of a semiconductor substrate, the first metal gate stack including a first work function metal (WFM) layer; forming a second metal gate stack in an active device region of the semiconductor substrate, the second metal gate stack including a second WFM layer different than the first WFM layer; and performing a CMP process using a slurry including a charged abrasive nanoparticles. The charged abrasive nanoparticles include a first concentration in the active device region different from a second concentration in the dummy region causing different polish rates in the active device region and dummy region. After the performing of the CMP process, the first metal gate stack has a first height greater different from a second height of the second metal gate stack.

A thin film analyzing device includes a processing and analyzing chamber for performing processing and analyzing of a subject having a thin film on a substrate. The processing and analyzing chamber includes a sample holder arranged to hold the subject, an X-ray irradiation source arranged to irradiate the subject with X-rays, a fluorescent X-ray detector configured to detect fluorescent X-rays which are emitted from the subject, a diffracted/reflected X-ray detector configured to detect reflected X-rays and diffracted X-rays which are emitted from the subject, and a substrate remover arranged to remove the substrate.

Provided is a novel polishing composition. The polishing composition comprises a water-soluble polymer at least comprising a vinyl alcohol-based resin having a side-chain group of 3 carbon atoms or more.

A method of manufacturing an optoelectronic device including assemblies of light-emitting diodes (LED) having first and second assemblies and first blocks made of a first photoluminescent material, each covering one of the first assemblies. The method includes the forming of a layer covering the first and second assemblies, the delimiting of first openings in the layer to expose the first assemblies, the filling of the first openings with the first material, and the performing of a chemical-mechanical polishing to delimit the first blocks.

Embodiments of the present disclosure relate to CMP slurry, CMP equipment, a semiconductor structure, and a manufacturing method of a semiconductor structure. The CMP slurry is configured to thin a polycrystalline silicon structure, so as to obtain a polycrystalline silicon layer with a flat surface, and includes: silicon dioxide abrasive particles, a peroxy compound, and deionized water. The peroxy compound has a volume percentage not less than 3% and not greater than 10%.

Exemplary slurry delivery assemblies may include a slurry fluid source. The assemblies may include a flurry delivery lumen having a lumen inlet and a lumen outlet. The lumen inlet may be fluidly coupled with an output of the slurry fluid source. The assemblies may include a deagglomeration tube fluidly coupled with the lumen outlet. The deagglomeration tube may include a tube inlet and a tube outlet. The assemblies may include one or more ultrasonic transducers coupled with the deagglomeration tube.