A multi-transistor configuration including a first transistor having a first terminal that is configured to control the flow of current between, a second terminal of the first transistor and a third terminal of the first transistor; a second transistor, that is a bipolar junction transistor comprising a base terminal, an emitter terminal, and a collector terminal, wherein the third terminal of the first transistor and the collector terminal of the second transistor are electrically connected; and a first voltage source having a first terminal at a first voltage and a second terminal at a second voltage.

The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.

The present disclosure provides a method for manufacturing a semiconductor. The method includes: forming a metal oxide layer over a gate structure over a substrate; forming a dielectric layer over the metal oxide layer; forming a metal layer over the metal oxide layer; and performing a chemical mechanical polish (CMP) operation to remove a portion of the dielectric layer and a portion of the metal layer, the CMP operation stopping at the metal oxide layer, wherein a slurry used in the CMP operation includes a ceria compound. The present disclosure also provides a method for planarizing a metal-dielectric surface.

A method is provided for making gratings of gold or other metal in silicon substrates. The disclosed method may achieve high aspect ratios. According to the disclosed method, a silicon wafer is through-etched. A seed layer of metal is vapor-deposited on one side of the wafer, and a layer of metal is electrodeposited on the seed layer. The electrodeposited metal plugs the trenches and provides a conductive surface for subsequent electrodeposition. The trenches are then filled by electrodeposition from within the trenches, so that the walls of the metal grating grow on the metal plugs.

The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10.sup.−3 M in the etching solution, wherein the ionic strength enhancer includes Li.sup.+, Na.sup.+, K.sup.+, Mg.sup.2+, Ca.sup.2+, N(CH.sub.3).sup.+, or N(C.sub.2H.sub.5).sup.4+, a solvent, and an etchant.

The present disclosure provides an etching solution, including an ionic strength enhancer having an ionic strength greater than 10.sup.−3 M in the etching solution, wherein the ionic strength enhancer includes Li.sup.+, Na.sup.+, K.sup.+, Mg.sup.2+, Ca.sup.2+, N(CH.sub.3).sup.+, or N(C.sub.2H.sub.5).sup.4+, a solvent, and an etchant.

A method includes: in a semiconductor wafer having a first semiconductor layer and a second semiconductor layer adjoining the first semiconductor layer, forming a porous region extending from a front surface into the first semiconductor layer; and removing the porous region by an etching process, wherein a doping concentration of the second semiconductor layer is less than 10.sup.−2 times a doping concentration of the first semiconductor layer and/or a doping type of the second semiconductor layer is complementary to a doping type of the first semiconductor layer, wherein forming the porous region comprises bringing in contact a porosifying agent with the front surface of the first semiconductor layer and applying a voltage between the first semiconductor layer and a first electrode that is in contact with the porosifying agent, wherein applying the voltage comprises applying the voltage between the first electrode and an edge region of the first semiconductor layer.

There is provided a structure manufacturing method, including: preparing an etching target at least whose top surface comprises group III nitride crystal, and an alkaline or acidic etching liquid containing peroxodisulfate ion as an oxidizing agent that receives electrons; irradiating the top surface of the etching target with light while rotating the etching target, with the top surface of the etching target immersed in the etching liquid heated to generate sulfate ion radicals.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.

Provided is a method of manufacturing a nanorod. The method comprising comprises the steps of: providing a growth substrate and a support substrate; epitaxially growing a nanomaterial layer onto one surface of the growth substrate; forming a sacrificial layer on one surface of the support substrate; bonding the nanomaterial layer with the sacrificial layer; separating the growth substrate from the nanomaterial layer; flattening the nanomaterial layer; forming a nanorod by etching the nanomaterial layer; and separating the nanorod by removing the sacrificial layer.