Disclosed are methods and systems for depositing layers comprising a transition metal and a group 13 element. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

A method includes forming a gate structure and an interlayer dielectric (ILD) layer over a substrate; selectively forming an inhibitor over the gate structure; performing an atomic layer deposition (ALD) process to form a dielectric layer over the ILD layer, wherein in the ALD process the dielectric layer has greater growing rate on the ILD than on the inhibitor; and performing an atomic layer etching (ALE) process to etch the dielectric layer until a top surface of the inhibitor is exposed, in which a portion of the dielectric layer remains on the ILD layer after the ALE process is complete.

The formation of a tungsten film is promoted when forming the tungsten film using tungsten chloride on an upper layer side of a titanium silicon nitride film. A titanium silicon nitride film is formed on one surface side of a semiconductor wafer as a substrate, and an intermediate film for promoting the formation of the tungsten film made of the tungsten chloride is formed on the upper layer side of the titanium silicon nitride film by using a gas for forming the intermediate film. The tungsten film is formed on an upper layer side of the intermediate film by using a gas of the tungsten chloride.

A semiconductor device including an interconnect. The interconnect is arranged to transfer current from one terminal to another, and the interconnect includes a first layer including a plurality of interweaved fingers, and each of the interweaved fingers varies in width in a direction of propagation current thereby resulting in a difference of resistance within each of the interweaved fingers in the direction of propagation of current; a second layer arranged below the first layer. The second layer compensates for the difference of resistance in the first layer.

Disclosed is a trench-type power device and a manufacturing method thereof. The trench-type power device comprises: a semiconductor substrate; a drift region located on the semiconductor substrate; a first trench and a second trench located in the drift region; a gate stack located in the first trench; and Schottky metal located on a side wall of the second trench, wherein the Schottky metal and the drift region form a Schottky barrier diode. The trench-type power device adopts a double-trench structure, which combines a trench-type MOSFET with the Schottky barrier diode and forms the Schottky metal on the side wall of the trench, so that the performance of the power device can be improved, and the unit area of the power device can be reduced.

According to one embodiment of the present disclosure, there is provided a substrate processing method including: providing a substrate; forming a seed layer on a surface of the substrate by heating a stage on which the substrate is placed to a first temperature and supplying a first source gas to the substrate; and forming a metal-containing film by heating the stage on which the substrate is placed to a second temperature and supplying a second source gas and a first reducing gas to the substrate on which the seed layer is formed.

A package includes a device die, a molding material molding the device die therein, and a through-via penetrating through the molding material. A redistribution line is on a side of the molding material. The redistribution line is electrically coupled to the through-via. A metal ring is close to edges of the package, wherein the metal ring is coplanar with the redistribution line.

A film deposition method includes preparing a substrate having an insulating film formed thereon, forming a seed layer on the insulating film, and supplying a molybdenum-containing gas and a reducing gas to the substrate having the seed layer famed thereon, to foam a molybdenum film on the seed layer.

A deposition method includes preparing a substrate having an insulating film formed thereon, forming a first molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate while the substrate is heated to a first temperature, and forming a second molybdenum film on the first molybdenum film by supplying the molybdenum-containing gas and the reducing gas to the substrate while the substrate is heated to a second temperature that is higher than the first temperature.

A deposition method includes preparing a substrate having an insulating film formed thereon; forming a molybdenum film on the insulating film by supplying a molybdenum-containing gas and a reducing gas to the substrate; and heat-treating the substrate having the molybdenum film formed on the insulating film, without exposing the substrate to atmospheric air.