A substrate processing method arranges a plurality of substrates in a storage area of a chamber, supplies an organic solvent to the plurality of substrates, arranges the plurality of substrates in a drying area, supplies a vapor of a hydrophobizing agent from a hydrophobizing agent nozzle to the plurality of substrates, arranges the plurality of substrates in the storage area, supplies an organic solvent from a first organic solvent nozzle to the plurality of substrates, supplies a vapor of an organic solvent from a second organic solvent nozzle to the drying area in a state where a liquid is stored in the storage area and the plurality of substrates are dipped in a liquid.

Exemplary integrated cluster tools may include a factory interface including a first transfer robot. The tools may include a wet clean system coupled with the factory interface at a first side of the wet clean system. The tools may include a load lock chamber coupled with the wet clean system at a second side of the wet clean system opposite the first side of the wet clean system. The tools may include a first transfer chamber coupled with the load lock chamber. The first transfer chamber may include a second transfer robot. The tools may include a dry etch chamber coupled with the first transfer chamber. The tools may include a second transfer chamber coupled with the first transfer chamber. The second transfer chamber may include a third transfer robot. The tools may include a process chamber coupled with the second transfer chamber.

A substrate cleaning system includes a cleaner module to clean a substrate after polishing of the substrate, a drier module to dry the substrate after cleaning by the cleaner module, a substrate support movable along a first axis from a first position in the drier module to a second position outside the drier module, and an in-line metrology station including a line-scan camera positioned to scan the substrate as the substrate is held by the substrate support and the substrate support is between the first position to the second position. The first axis is substantially parallel to a face of the substrate as held in by the substrate support.

A cleaning system includes at least one cleaning module configured to receive a substrate after a chemical mechanical polishing (CMP) process and to remove contaminants on the substrate using a cleaning solution. The cleaning system further includes a cleaning solution supply system configured to supply the cleaning solution to the at least one cleaning module. The cleaning solution supply system includes at least one temperature control system. The at least one temperature control system includes a heating device configured to heat the cleaning solution, a cooling device configured to cool the cleaning solution, a temperature sensor configured to monitor a temperature of the cleaning solution, and a temperature controller configured to control the heating device and the cooling device.

An apparatus includes: a tank storing a processing liquid; a circulation line; a branch line; a processing part for supplying the processing liquid to a substrate at the branch line; a discharge part for reducing a storage amount of the processing liquid; a supply part for supplying a new processing liquid to the tank; and a controller including: a first determination part for determining whether the storage amount is less than a lower limit value; a first replenishment controller for replenishing the processing liquid to the tank when the storage amount is less than the lower limit value; a calculation part for calculating a replenishment amount of the processing liquid; and a second replenishment controller for reducing the storage amount and replenishing the processing liquid to the tank when a calculation value of the replenishment amount is less than a set value.

An exemplary method of monitoring a bath process includes processing a first wafer by submerging the first wafer within a bath solution; capturing a video of the bath solution containing the first wafer during a first time interval; analyzing the video based on intensity of light captured in a frame of the video; and based on analyzing the video, determining a first metric of the bath solution during the first time interval.

An apparatus and method for drying semiconductor wafers. The apparatus includes a tank that holds hold a liquid, a first lifting assembly, and a second lifting assembly. The first lifting assembly lifts and lowers a first wafer carrier and one or more semiconductor wafers supported thereon between a first lowered position in which the one or more semiconductor wafers are completely submerged in the liquid in the tank and a first raised position in which an upper portion of the one or more semiconductor wafers are not submerged in the liquid in the tank. The second lifting assembly has a second wafer carrier that engages the upper portion of the one or more semiconductor wafers and continues to lift the one or more semiconductor wafers until an entirety of the one or more semiconductor wafers is no longer submerged in the liquid in the tank.

A preprocess is efficiently performed on a substrate. A pre-wet module 200 includes a deaeration tank 210, a processing device 258, a substrate holder 220, and a drive mechanism 230. The deaeration tank 210 is configured to house a deaerated liquid. The processing device 258 includes a nozzle 268 configured to supply a cleaning liquid to a surface to be processed of a substrate having the surface to be processed facing upward. The substrate holder 220 is disposed between the deaeration tank 210 and the processing device 258. The substrate holder 220 includes a first holding member 222 configured to hold a first substrate and a second holding member 224 configured to hold a second substrate. The drive mechanism 230 is configured to rotate and move up and down the substrate holder 220. The drive mechanism 230 includes a rotation mechanism 240 and an elevating mechanism 248. The rotation mechanism 240 is configured to rotate the substrate holder 220 between a first state where a surface to be processed of the first substrate is opposed to a deaerated liquid in the deaeration tank 210 and a second state where a surface to be processed of the second substrate is opposed to the deaerated liquid in the deaeration tank. The elevating mechanism 248 is configured to move up and down the substrate holder 220.

In an embodiment, a method includes: receiving a wafer from a first dilution tank; immersing the wafer in a deionization tank, wherein the deionization tank comprises a tank solution that comprises a deionizing solution; determining a metal ion concentration within the tank solution; performing remediation within the deionization tank in response to determining that the metal ion concentration is greater than a threshold value; and moving the wafer to a second dilution tank.

A method includes introducing a chemical liquid into the inner tank; reacting the wafer with the chemical liquid to generate byproducts; overfilling the inner tank with the chemical liquid and the byproducts from the inner tank to an outer tank, wherein the outer tank has an upper inclined bottom plate, a lower flat bottom plate, and a vertical intermediary bottom plate connecting the upper inclined bottom plate to the lower flat bottom plate, the inner tank penetrates through the upper inclined bottom plate of the outer tank; introducing the chemical liquid with the byproducts from above the lower flat bottom plate of the outer tank to a filter; filtering out the byproducts out of the chemical liquid by using the filter; introducing the filtered chemical liquid to the inner tank.