A semiconductor processing tool may include a processing tank. The semiconductor processing tool may include an arm arranged to hold a plurality of wafers over the processing tank such that wafers in the plurality of wafers are horizontally stacked over the processing tank. The semiconductor processing tool may include a fan arranged over the arm to permit an airflow to be provided across surfaces of the wafers in a vertical direction toward the processing tank. The semiconductor processing tool may include an exhaust system including at least one exhaust output and one or more exhaust pipe segments arranged substantially around the processing tank and connected to the at least one exhaust output. The one or more exhaust pipe segments may include a plurality of openings to receive exhaust air to be provided to the at least one exhaust output.

A method of forming a semiconductor device includes soaking a batch of wafers in a first cleaning liquid, replacing the first cleaning liquid with a second cleaning liquid, soaking the batch of wafers in the second cleaning liquid, and soaking the batch of wafers in an etchant. The first cleaning liquid has a first temperature. The second cleaning liquid has a second temperature. The etchant has a third temperature. The second temperature is between the first temperature and the third temperature.

The present invention provides an apparatus for treating a substrate, the apparatus including: a processing tank having an accommodation space in which a processing liquid is accommodated; a support member for supporting at least one substrate in the receiving space in a vertical posture; and a posture changing robot for changing a posture of the substrate in a state of being immersed in the liquid state from the vertical posture to a horizontal posture, in which wherein the posture changing robot includes: a hand configured to grip the substrate; and an arm for moving the hand.

A substrate support for supporting a substrate in a lithographic apparatus, the substrate support including: a support body configured to support the substrate; a main body separate from the support body and configured to support the support body, the main body including a thermal conditioner configured to thermally condition the main body and/or support body and/or substrate; and an extractor body surrounding the main body and the support body, the extractor body having an extraction channel configured to extract fluid from near a peripheral part of the substrate.

A substrate processing device according to the present embodiment includes a processing tank configured to be capable of accumulating a liquid. A conveyer can array a plurality of semiconductor substrates in such a manner that front surfaces of the semiconductor substrates face a substantially horizontal direction, and transport the semiconductor substrates into the processing tank. A plurality of liquid suppliers can supply the liquid toward an inside of the processing tank from a lower portion of the processing tank. A plurality of current plates are arranged on at least either one end side or the other end side of an array of the semiconductor substrates. The current plates are provided in a first gap region above the semiconductor substrates in gaps between the conveyer and a sidewall of the processing tank on both sides of the conveyer as viewed from an array direction of the semiconductor substrates.

A substrate processing system includes: a batch-type processing part that collectively processes a lot including substrates arranged at a first pitch; a single-substrate-type processing part that processes the substrates of the lot one by one; and an interface part that delivers the substrates between the batch-type processing part and the single-substrate-type processing part. The batch-type processing part includes a processing bath that stores a processing solution having a lump shape or a mist shape, a first holder that holds the substrates arranged at the first pitch, and a second holder that receives the substrates arranged at a second pitch from the first holder in the processing solution. The interface part includes a transfer part that transfers the substrates held separately by the first and second holders in the processing solution, from the batch-type processing part to the single-substrate-type processing part.

The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a first process treating unit configured to treat a substrate in a single-type method; a second process treating unit configured to treat a substrate in a batch-type method; and a posture changing unit provided between the first process treating unit and the second process treating unit and configured to change a posture of the substrate between a vertical posture and a horizontal posture, and wherein the substrate is loaded to and unloaded from the first process treating unit.

Provided are methods and systems for cleaning various semiconductor substrate storage articles, in particular, FOUP doors. The FOUP doors and other similar articles often have openings that may get contaminated with cleaning liquids if not covered. The described cleaning system includes contact points for engaging the article and covering these openings. The contact points may be also used for supporting the article and for pressurizing the openings in the article with a gas. The gas may be supplied through one or more contact points. It prevents liquids from getting into the openings if even the openings are not completely sealed. The pressurization may be maintained through the entire wet portion of the cleaning process. The article may be rotated within the cleaning system while cleaning and/or other liquids or gases are dispensed through a set of spraying nozzles. Spraying nozzles may move to enhance cleaning of the article.

A method for effectively cleaning vias (20034), trenches (20036) or recessed areas on a substrate (20010) using an ultra/mega sonic device (1003, 3003, 16062, 17072), comprising: applying liquid (1032) into a space between a substrate (20010) and an ultra/mega sonic device (1003, 3003, 16062, 17072); setting an ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside vias (20034), trenches (20036) or recessed areas on the substrate (20010) increasing to a first set value, setting said ultra/mega sonic power supply at frequency f.sub.2 and power P.sub.2 to drive said ultra/mega sonic device (1003, 3003, 16062, 17072); after the ratio of total bubbles volume to volume inside the vias (20034), trenches (20036) or recessed areas reducing to a second set value, setting said ultra/mega sonic power supply at frequency f.sub.1 and power P.sub.1 again; repeating above steps till the substrate (20010) being cleaned.

Provided are a method and system for increasing etch rate and etch selectivity of a masking layer on a substrate in an etch treatment system, the etch treatment system configured for single substrate processing. The method comprises placing the substrate into the etch processing chamber, the substrate containing the masking layer and a layer of silicon or silicon oxide, obtaining a supply of steam water vapor mixture at elevated pressure, obtaining a supply of treatment liquid for selectively etching the masking layer over the silicon or silicon oxide at a selectivity ratio, combining the treatment liquid and the steam water vapor mixture, and injecting the combined treatment liquid and the steam water vapor mixture into the etch processing chamber. The flow of the combined treatment liquid and the steam water vapor mixture is controlled to maintain a target etch rate and a target etch selectivity ratio of the masking layer to the layer of silicon or silicon oxide.