According to one embodiment, a semiconductor device includes a first semiconductor chip including a first metal pad and a second metal pad; and a second semiconductor chip including a third metal pad and a fourth metal pad, the third metal pad joined to the first metal pad, the fourth metal pad coupled to the second metal pad via a dielectric layer, wherein the second semiconductor chip is coupled to the first semiconductor chip via the first metal pad and the third metal pad.

A semiconductor device includes: a semiconductor substrate; a first transistor provided at an upper surface of the semiconductor substrate; and a first capacitor provided above the first transistor and connected to a gate of the first transistor. A tunnel current is able to flow between the gate and the semiconductor substrate.

A vertical memory device includes lower circuit patterns, a second substrate, a capacitor, gate electrodes, and a channel. The lower circuit patterns are formed on a first substrate including first, second and third regions. Contact plugs are formed in the second region. Through vias are formed in the third region. The second substrate is formed on the lower circuit patterns. The capacitor is formed on the lower circuit patterns, and includes a first conductor, a dielectric layer structure, and a second conductor. The first conductor is spaced apart from the second substrate at the same height as the second substrate. The dielectric layer structure is formed on the first conductor. The second conductor is formed on the dielectric layer structure. The gate electrodes are spaced apart from each other on the second substrate in a vertical direction. The channel extends through the gate electrodes in the vertical direction.

A High Mobility Electron Transistor (HEMT) and a capacitor co-formed on an integrated circuit (IC) share at least one structural feature, thereby tightly integrating the two components. In one embodiment, the shared feature may be a 2DEG channel of the HEMT, which also functions in lieu of a base metal layer of a conventional capacitor. In another embodiment, a dialectic layer of the capacitor may be formed in a passivation step of forming the HEMT. In another embodiment, a metal contact of the HEMT (e.g., source, gate, or drain contact) comprises a metal layer or contact of the capacitor. In these embodiments, one or more processing steps required to form a conventional capacitor are obviated by exploiting one or more processing steps already performed in fabrication of the HEMT.

The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-Al.sub.yGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-Al.sub.yGaN layer to the junction between the i-GaN channel layer and the i-Al.sub.xGaN layer.

A circuit package is provided that includes a substrate having a first side and a second side, an integrated circuit component coupled to the second side of the substrate, and a ball grid array formed on the first side of the substrate, the ball grid array including multiple contact balls arranged in a pattern. Each of a first subset of the contact balls is electrically coupled to a first voltage input of an integrated circuit component, and each of a second subset of the contact balls is electrically coupled to a second voltage input of the integrated circuit component. The package also includes a capacitor mounted to the first side and having a first terminal coupled to a first contact ball in the first subset of the contact balls and a second terminal coupled to a second contact ball in the second subset of the contact balls.

A semiconductor device includes a channel structure, a dielectric structure, a gate structure, a first conductive structure, and a second conductive structure. The channel structure has a top surface, a bottom surface, and a sidewall extending from the top surface to the bottom surface. The first conductive structure is disposed on the bottom surface of the channel structure and includes a body portion and at least one convex portion, and a top surface of the convex portion is higher than a top surface of the body portion. The second conductive structure is disposed on the top surface of the channel structure and includes a body portion and at least one convex portion, and a bottom surface of the body portion is higher than a bottom surface of the convex portion.

Examples of an integrated circuit with a capacitor structure and a method for forming the integrated circuit are provided herein. In some examples, an integrated circuit device includes a substrate and a trench isolation material disposed on the substrate. An isolation structure is disposed on the trench isolation material. A first electrode disposed on the isolation structure, and a second electrode disposed on the isolation structure. A capacitor dielectric is disposed on the isolation structure between the first electrode and the second electrode. In some such examples, the isolation structure includes a first hard mask disposed on the trench isolation material, a dielectric disposed on the first hard mask, and a second hard mask disposed on the dielectric.

A nitride semiconductor device includes: a first nitride semiconductor layer constituting an electron transit layer; a second nitride semiconductor layer formed on the first nitride semiconductor layer and constituting an electron supply layer; a ridge-shaped gate portion formed on the second nitride semiconductor layer; and a source electrode and a drain electrode disposed on the second nitride semiconductor layer so as to face each other with the ridge-shaped gate portion interposed therebetween, wherein the ridge-shaped gate portion includes: a nitride semiconductor gate layer containing acceptor-type impurities and disposed on the second nitride semiconductor layer; a gate metal film disposed on the nitride semiconductor gate layer; a gate insulating film formed on the gate metal film; and a gate electrode capacitively-coupled to the gate metal film by the gate insulating film.

The present invention provides an epitaxial structure of N-face group III nitride, its active device, and the method for fabricating the same. By using a fluorine-ion structure in device design, a 2DEG in the epitaxial structure of N-face group III nitride below the fluorine-ion structure will be depleted. Then the 2DEG is located at a junction between a i-GaN channel layer and a i-Al.sub.yGaN layer, and thus fabricating GaN enhancement-mode AlGaN/GaN high electron mobility transistors (HEMTs), hybrid Schottky barrier diodes (SBDs), or hybrid devices. After the fabrication step for polarity inversion, namely, generating stress in a passivation dielectric layer, the 2DEG will be raised from the junction between the i-GaN channel layer and the i-Al.sub.yGaN layer to the junction between the i-GaN channel layer and the i-Al.sub.xGaN layer.