The present application provides a low temperature poly-silicon thin film, a low temperature poly-silicon thin film transistor and manufacturing methods thereof, and a display device. The manufacturing method of a low temperature poly-silicon thin film comprises steps of: forming an amorphous silicon thin film on a base; and performing a laser annealing process on the amorphous silicon thin film by using a mask plate to form a low temperature poly-silicon thin film, wherein the mask plate includes a transmissive region and a shielding region surrounding the transmissive region, and two sides of the shielding region adjacent to the transmissive region are in concave-convex shapes. Performance of the low temperature poly-silicon thin film formed by the manufacturing method of a low temperature poly-silicon thin film in the present application is enhanced.

Disclosed are a substrate, a method for manufacturing the substrate, and a display panel. The substrate includes a base, an active switch, an active light-emitting pixel array, and a reflective layer. The active switch is formed on the base. The reflective layer is formed on the base under the active switch and is disposed farther away from a light incident surface of the substrate than the active switch. The active light-emitting pixel array is coupled with the active switch. The active switch includes a polysilicon layer. The reflective layer totally covers the base and the reflective layer has a smooth surface.

A manufacturing method and apparatus of low temperature polycrystalline silicon, and a polycrystalline silicon are provided. The manufacturing method of low temperature polycrystalline silicon includes forming an amorphous silicon layer on a substrate; scanning the amorphous silicon layer by using a laser to emit a strip-shaped laser beam to go through a mask which includes transmissive stripes and partially-transmissive stripes arranged alternately, to form low temperature fusion regions and high temperature fusion regions which are arranged alternately on the amorphous silicon layer; recrystallizing the amorphous silicon layer from the low temperature fusion regions to the high temperature fusion regions.

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

A laser crystallization device includes a laser oscillator, a stage, and a reflection unit. The stage is configured to support a substrate with a target film disposed on the substrate. The laser oscillator is configured to irradiate an incident laser beam on the target film. The stage is configured to move the substrate such that the incident laser beam scans the target film. The incident laser beam is reflected from the target film to generate a reflected laser beam. The reflection unit includes at least two reflection mirrors positioned at a path of the reflected laser beam. The reflection unit is configured to re-irradiate the reflected laser beam on the target film two or more times through a plurality of paths that are different from a path of the incident laser beam.

A thin film transistor and a manufacturing method thereof, an array substrate and a manufacturing method thereof, and a display device are disclosed. The manufacturing method of the array substrate includes depositing an amorphous silicon thin film layer on a base substrate; performing a patterning process on the amorphous silicon thin film layer, so as to form a pattern with multiple small pores at a surface of the amorphous silicon thin film layer. With this method, when a laser annealing treatment of amorphous silicon is performed, the molten silicon after melting fills the space of small pores at a surface of the amorphous silicon thin film layer firstly, thereby avoiding forming a protruded grain boundary that is produced because the excess volume of polysilicon is squeezed.

A method for fabricating an array substrate is disclosed, the array substrate includes a first TFT and a pixel electrode. The method includes: forming a buffer layer (322) on the substrate (321); depositing an active layer film (323, 324) and a transparent electrode layer (326) on the substrate (321) having the buffer layer (322) formed thereon, and forming patterns of an active layer (171), a source/drain electrode (151, 152) and a pixel electrode of the first TFT through a single patterning process. An array substrate and a display device fabricated by the above method are also disclosed. By means of the fabrication method, it significantly reduces the fabrication cycle of the TFT, improves the stability of the TFT, such that threshold voltage of the TFT will not drift severely. Meanwhile, the product yield is improved and the lifetime of the device is extended.

Provided is a crystalline oxide semiconductor thin film comprising only bixbyite-structured In.sub.2O.sub.3 phase, suitable as a channel layer material for a thin film transistor, and having excellent etching properties in an amorphous state and a low carrier density and high carrier mobility in a crystalline state. An amorphous oxide thin film is formed using, as a target, an oxide sintered body which comprises indium, gallium, oxygen, and unavoidable impurities, the gallium content being in a range of 0.09 to 0.45 in terms of a Ga/(In+Ga) atomic ratio, has a In.sub.2O.sub.3 phase having a bixbyite structure as the main crystal phase, and has a GaInO.sub.3 phase having a β-Ga.sub.2O.sub.3-type structure, or a GaInO.sub.3 phase having a β-Ga.sub.2O.sub.3-type structure and a (Ga, In).sub.2O.sub.3 phase finely dispersed therein. The amorphous oxide thin film is finely processed by performing etching using photolithography, and is annealed.

The present disclosure discloses a method for preparing an array substrate, an array substrate and a display panel, wherein the method comprises: forming a buffer layer on a substrate in a first region and a second region, wherein the buffer layer has a groove located in the second region; forming a first indium oxide thin film on the buffer layer in the first region; forming a second indium oxide thin film in the groove; performing a reduction process on the second indium oxide thin film to obtain indium particles; forming an amorphous silicon thin film in the groove, and inducing the amorphous silicon of the amorphous silicon thin film to form microcrystalline silicon at a preset temperature by using the indium particles; and removing the indium particles in the microcrystalline silicon to form a microcrystalline silicon semiconductor layer of the microcrystalline silicon thin film transistor.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.