A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The thin film transistor includes a gate, a source, a drain, and an active layer. Forming the active layer includes: forming a pattern comprising a thermal insulation layer; forming a pattern comprising an amorphous silicon layer on the thermal insulation layer, wherein the pattern comprising the amorphous silicon layer includes a first portion on the thermal insulation layer and a second portion extending beyond the thermal insulation layer; and treating the pattern comprising the amorphous silicon layer with a laser annealing process, so that the amorphous silicon layer grows grain in a direction from the second portion to the first portion to form the active layer from polycrystalline silicon.

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

A laser annealing apparatus (1) according to the embodiment includes: a laser beam source (11) configured to emit a laser beam (L1) to crystallize an amorphous silicon film (101a) on a substrate (100) and to form a poly-silicon film (101b); a projection lens (13) configured to condense the laser beam to irradiate a silicon film (101); a probe beam source configured to emit a probe beam (L2); a photodetector (25) configured to detect the probe beam (L3) transmitted through the silicon film (101), a processing apparatus (26) configured to calculate a standard deviation of detection values of a detection signal output from the photodetector, and to determine a crystalline state of the crystallized film based on the standard deviation.

A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

An apparatus and a method for manufacturing a mask assembly and a method of manufacturing a display device are provided. The apparatus may include: a tensioning part configured to be spaced apart from a mask frame comprising at least one opening, the tensioning part configured to tension a mask sheet in at least one of a first direction and a second direction, the mask sheet comprising a cell area corresponding to the at least one opening, and a dummy portion arranged outside the cell area; a pressing part configured to correspond to the dummy portion and press the dummy portion in a third direction intersecting a plane in which the first direction and the second direction extend; and a header configured to irradiate a laser beam toward the mask sheet to fix the mask sheet to the mask frame.

A laser crystallization apparatus includes a plurality of laser generators which generate a plurality of laser beams, a plurality of attenuators which adjust energy intensity of the plurality of laser generators, and an optical module which overlap outputs of the plurality of attenuators to output a line beam. A first attenuator of the plurality of attenuators attenuates the energy intensity of the corresponding laser beam, and a second attenuator of the plurality of attenuators maintains the energy intensity of the corresponding laser beam.

A method of manufacturing a polycrystalline silicon layer for a display device includes the steps of forming an amorphous silicon layer on a substrate, cleaning the amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam to form a polycrystalline silicon layer.

An apparatus and a method for manufacturing a mask assembly and a method of manufacturing a display device are provided. The apparatus may include: a tensioning part configured to be spaced apart from a mask frame comprising at least one opening, the tensioning part configured to tension a mask sheet in at least one of a first direction and a second direction, the mask sheet comprising a cell area corresponding to the at least one opening, and a dummy portion arranged outside the cell area; a pressing part configured to correspond to the dummy portion and press the dummy portion in a third direction intersecting a plane in which the first direction and the second direction extend; and a header configured to irradiate a laser beam toward the mask sheet to fix the mask sheet to the mask frame.

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In.sub.1+δGa.sub.1−δO.sub.3(ZnO).sub.m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In.sub.xGa.sub.yO.sub.3(ZnO).sub.m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

A thin film transistor includes a gate, a gate insulating layer, an active layer, an ionized amorphous silicon layer, a source and a drain. The gate insulating layer covers the gate. The active layer is disposed on a side of the gate insulating layer away from the gate. The ionized amorphous silicon layer is disposed on a side of the active layer away from the gate, and the ionized amorphous silicon layer is in contact with the gate insulating layer. The source and the drain are disposed on a side of the ionized amorphous silicon layer away from the gate insulating layer, and the source and the drain are coupled to the active layer through the ionized amorphous silicon layer.