Disclosed are an array substrate and a manufacturing method therefor, a display panel and a display apparatus. The array substrate comprises several pixel units located on a base substrate and arranged in an array, with each of the pixel units comprising a thin-film transistor, and the thin-film transistor comprising a polycrystalline silicon active layer, wherein a length extension direction of a channel of the thin-film transistor is parallel to a pre-set direction; and the pre-set direction is a scanning direction of an excimer laser beam used when forming the polycrystalline silicon active layer.

A laser crystallizing apparatus includes a first light source unit configured to emit a first input light having a linearly polarized laser beam shape. A second light source unit is configured to emit a second input light having a linearly polarized laser beam shape. A polarization optical system is configured to rotate the first input light and/or the second input light at a predetermined rotation angle. An optical system is configured to convert the first input light and the second input light, which pass through the polarization optical system, into an output light. A target substrate is seated on a stage and output light is directed onto the target substrate. A monitoring unit is configured to receive the first input light or the second input light from the polarization optical system and measure a laser beam quality thereof.

A poly-silicon layer and a method of manufacturing the same, methods of manufacturing a thin film transistor, and an array substrate are provided. The method of manufacturing the poly-silicon layer includes forming an amorphous silicon layer, crystallizing the amorphous silicon layer to form a first poly-silicon layer, and processing the first poly-silicon layer to form a second poly-silicon layer using a green laser annealing process.

The present disclosure provides an oxide semiconductor layer and a preparation method thereof, device, substrate, and means, and belongs to the field of semiconductor technologies. The method includes: forming an oxide semiconductor layer having multiply types of regions on a substrate, at least two types of the multiple types of regions having different thicknesses, and adjusting an oxygen content of at least one type of regions in the multiply types of regions, so that the oxygen content and the thickness in the multiple types of regions are positively correlated.

A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.

A thin film transistor according to an embodiment of the present invention includes: a gate electrode supported by a substrate; a gate insulating layer covering the gate electrode; a silicon semiconductor layer being provided on the gate insulating layer and having a crystalline silicon region, the crystalline silicon region including a first region, a second region, and a channel region located between the first region and the second region, such that the channel region, the first region, and the second region overlap the gate electrode via the gate insulating layer; an insulating protection layer disposed on the silicon semiconductor layer so as to cover the channel region and allow the first region and the second region to be exposed; a source electrode electrically connected to the first region; and a drain electrode electrically connected to the second region. The channel region is lower in crystallinity than the first region and the second region.

A thin film transistor, a method for fabricating the same, a display substrate, and a display device are disclosed. The thin film transistor includes a gate, a source, a drain, and an active layer. Forming the active layer includes: forming a pattern comprising a thermal insulation layer; forming a pattern comprising an amorphous silicon layer on the thermal insulation layer, wherein the pattern comprising the amorphous silicon layer includes a first portion on the thermal insulation layer and a second portion extending beyond the thermal insulation layer; and treating the pattern comprising the amorphous silicon layer with a laser annealing process, so that the amorphous silicon layer grows grain in a direction from the second portion to the first portion to form the active layer from polycrystalline silicon.

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. At least one of the top source/drain region, the bottom source/drain region, and the channel region are crystalline. All crystal grains within the at least one of the top source/drain region, the bottom source/drain region, and the channel region have average crystal sizes within 0.064 μm.sup.3 of one another. Other embodiments, including methods, are disclosed.

To provide an oxide semiconductor film having stable electric conductivity and a highly reliable semiconductor device having stable electric characteristics by using the oxide semiconductor film. The oxide semiconductor film contains indium (In), gallium (Ga), and zinc (Zn) and includes a c-axis-aligned crystalline region aligned in the direction parallel to a normal vector of a surface where the oxide semiconductor film is formed. Further, the composition of the c-axis-aligned crystalline region is represented by In.sub.1+δGa.sub.1-δO.sub.3(ZnO).sub.m (0<δ<1 and m=1 to 3 are satisfied), and the composition of the entire oxide semiconductor film including the c-axis-aligned crystalline region is represented by In.sub.xGa.sub.yO.sub.3(ZnO).sub.m (0<x<2, 0<y<2, and m=1 to 3 are satisfied).

A transistor comprises a top source/drain region, a bottom source/drain region, a channel region vertically between the top and bottom source/drain regions, and a gate operatively laterally-adjacent the channel region. At least one of the top source/drain region, the bottom source/drain region, and the channel region are crystalline. All crystal grains within the at least one of the top source/drain region, the bottom source/drain region, and the channel region have average crystal sizes within 0.064 μm.sup.3 of one another. Other embodiments, including methods, are disclosed.