A Schottky diode comprises: a substrate; a first semiconductor layer located on the substrate; a second semiconductor layer located on the first semiconductor layer, two-dimensional electron gas being formed at an interface between the first semiconductor layer and the second semiconductor layer; a cathode located on the second semiconductor layer and forming an ohmic contact with the second semiconductor layer; a first passivation dielectric layer located on the second semiconductor layer; a field plate groove formed in the first passivation dielectric layer; and an anode covering the field plate groove and a portion of the first passivation dielectric layer, wherein a distance between a bottom surface of the field plate groove and the two-dimensional electron gas in a height direction is greater than 5 nm.

The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

This diode has an undoped GaN layer 11, an Al.sub.xGa.sub.1-xN layer (0<x<1) 12 thereon, a Mg-doped p-type In.sub.yGa.sub.1-yN layer (0<y<1) 13 having an island-like shape thereon, a metal electrode 14 thereon, an anode electrode 15 which is provided on the Al.sub.xGa.sub.1-xN layer 12 and which is electrically connected to the metal electrode 14 and a cathode electrode 16 which is provided on a part of the Al.sub.xGa.sub.1-xN layer 12 which is located on the opposite side from the anode electrode 15 with respect to the p-type In.sub.yGa.sub.1-yN layer 13. In this diode, at a non-operating time, a two-dimensional electron gas 17 is formed in the undoped GaN layer 11 in the vicinity part of a hetero-interface between the Al.sub.xGa.sub.1-xN layer 12 and the undoped GaN layer 11 except a part below the p-type In.sub.yGa.sub.1-yN layer 13.

A manufacturing method for an AlAsGeAlAs structure based plasma p-i-n diode in a multilayered holographic antenna is provided. The manufacturing method includes: selecting a GeOI substrate and disposing an isolation region in the GeOI substrate; etching the GeOI substrate to form a P-type trench and an N-type trench; depositing AlAs materials in the P-type trench and the N-type trench and performing ion implantation into the AlAs materials in the P-type trench and N-type trench to form a P-type active region and an N-type active region; and forming leads on surfaces of the P-type active region and the N-type active region to obtain the AlAsGeAlAs structure based plasma p-i-n diode. Therefore, a high-performance Ge based plasma p-i-n diode suitable for forming a solid plasma antenna can be provided by using a deep trench isolation technology and an ion implantation process.

A heterojunction diode is provided, including first and second semiconductor layers made of III-N material, the layers being superposed to form a two-dimensional electron gas; an anode and a cathode that are selectively electrically connected to each other by the electron gas; a third semiconductor layer positioned under the gas; a p-doped first semiconductor element contacting the anode the third layer, and forming a separation between the anode and the third layer; and an n-doped second semiconductor element contacting the cathode and the third layer, and forming a separation between the cathode and the third layer, the third layer and the first and second elements forming a p-i-n diode.

A hydrogen sensor can include a substrate, an Ohmic metal disposed on the substrate, a nitride layer disposed on the substrate and having a first window exposing the substrate, a Schottky metal placed in the first window and disposed on the substrate, a final metal disposed on the nitride layer and the Schottky metal and having a second window exposing the Schottky metal, and a polymethyl-methacrylate (PMMA) layer encapsulating the second window. The PMMA layer can fill the second window and be in contact with the Schottky metal.

Described herein are methods for using remote plasma chemical vapor deposition (RP-CVD) and sputtering deposition to grow layers for light emitting devices. A method includes growing a light emitting device structure on a growth substrate, and growing a tunnel junction on the light emitting device structure using at least one of RP-CVD and sputtering deposition. The tunnel junction includes a p++ layer in direct contact with a p-type region, where the p++ layer is grown by using at least one of RP-CVD and sputtering deposition. Another method for growing a device includes growing a p-type region over a growth substrate using at least one of RP-CVD and sputtering deposition, and growing further layers over the p-type region. Another method for growing a device includes growing a light emitting region and an n-type region using at least one of RP-CVD and sputtering deposition over a p-type region.

A heterojunction diode is provided, including first and second semiconductor layers made of III-N material, the layers being superposed to form a two-dimensional electron gas; an anode and a cathode that are selectively electrically connected to each other by the electron gas; a third semiconductor layer positioned under the gas; a p-doped first semiconductor element contacting the anode the third layer, and forming a separation between the anode and the third layer; and an n-doped second semiconductor element contacting the cathode and the third layer, and forming a separation between the cathode and the third layer, the third layer and the first and second elements forming a p-i-n diode.

The present invention discloses an electronic device formed of a group III nitride. In one embodiment, a substrate is fabricated by the ammonothermal method and a drift layer is fabricated by hydride vapor phase epitaxy. After etching a trench, p-type contact pads are made by pulsed laser deposition followed by n-type contact pads by pulsed laser deposition. The bandgap of the p-type contact pad is designed larger than that of the drift layer. Upon forward bias between p-type contact pads (gate) and n-type contact pads (source), holes and electrons are injected into the drift layer from the p-type contact pads and n-type contact pads. Injected electrons drift to the backside of the substrate (drain).