Power semiconductor devices can often be expensive to produce and/or expensive to operate (i.e. inefficient). The present structure seeks to overcome these problems by providing a double-sided vertical power transistor structure that poses a unipolar path and a second parallel bipolar path.

This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.

A characteristic of a semiconductor device having a back electrode including an AuSb alloy is improved. The semiconductor device has a semiconductor substrate and the back electrode including the AuSb alloy layer. The back electrode is formed on the semiconductor substrate. The Sb concentration in the AuSb alloy layer is equal to or greater than 15 wt %, and equal to or less than 37 wt %. The thickness of the AuSb alloy layer is equal to or larger than 20 nm, and equal to or less than 45 nm.

Methods and systems for double-sided semiconductor device fabrication. Devices having multiple leads on each surface can be fabricated using a high-temperature-resistant handle wafer and a medium-temperature-resistant handle wafer. Dopants can be introduced on both sides shortly before a single long high-temperature diffusion step diffuses all dopants to approximately equal depths on both sides. All high-temperature processing occurs with no handle wafer or with a high-temperature handle wafer attached. Once a medium-temperature handle wafer is attached, no high-temperature processing steps occur. High temperatures can be considered to be those which can result in damage to the device in the presence of aluminum-based metallizations.

A Bipolar Junction Transistor (BJT) comprises an emitter, a collector, and a base between the emitter and the collector. The BJT also comprises an emitter contact on a first side of the BJT, a base contact on the first side of the BJT, and a collector contact on a second side of the BJT. The BJT further comprises a Deep Trench Isolation (DTI) region extending from the first side of the BJT to the second side of the BJT.

This specification discloses methods for integrating a SiGe-based HBT (heterojunction bipolar transistor) and a Si-based BJT (bipolar junction transistor) together in a single manufacturing process that does not add a lot of process complexity, and an integrated circuit that can be fabricated utilizing such a streamlined manufacturing process. In some embodiments, such an integrated circuit can enjoy both the benefits of a higher RF (radio frequency) performance for the SiGe HBT and a lower leakage current for the Si-based BJT. In some embodiments, such an integrated circuit can be applied to an ESD (electrostatic discharge) clamp circuit, in order to achieve a lower, or no, yield-loss.

A Bipolar Junction Transistor (BJT) comprises an emitter, a collector, and a base between the emitter and the collector. The BJT also comprises an emitter contact on a first side of the BJT, a base contact on the first side of the BJT, and a collector contact on a second side of the BJT. The BJT further comprises a Deep Trench Isolation (DTI) region extending from the first side of the BJT to the second side of the BJT.

A vertical semiconductor device and method for manufacturing the same is provided. The semiconductor device includes a body with a substrate and an epitaxial layer on the substrate, the layer includes a first region of a first conductivity type, and a second region of a second different conductivity type, the second region is arranged opposite to the substrate with respect to the first region, and when viewed in a first direction from the layer to the substrate, the first region and the second region each extend across an entire area of the body. The device further includes a trench arranged in the body, extending through the second region and at least partially into the first region, thereby dividing the second region into an inner and an outer portion that are mutually electrically isolated, and a first conductive contact on the second region to enable electrically accessing the inner portion.

Rectifiers are used in power systems, but surges are commonly encountered in the power grid, which can damage switches used to drive the active rectifiers. An active rectification system is proposed in which a thyristor type path is enabled through a transistor device such that surges bypass the driving switches.

A semiconductor structure including a substrate, a BJT, a first interconnect structure and a second interconnect structure is provided. The substrate has a first side and a second side opposite to each other. The BJT is located at the first side. The BJT includes a collector, a base and an emitter. The collector is disposed in the substrate. The base is disposed on the substrate. The emitter is disposed on the base. The first interconnect structure is located at the first side and electrically connected to the base. The second interconnect structure is located at the second side and electrically connected to the collector. The first interconnect structure further extends to the second side. The first interconnect structure and the second interconnect structure are respectively electrically connected to an external circuit at the second side. The semiconductor structure can have better overall performance.