Apparatuses including circuit layout regions of a semiconductor device and methods of designing the circuit layout regions of a semiconductor device are described. An example apparatus includes a first layout region including a first transistor area including at least one first transistor, at least one contact in proximity to the first transistor area, and a first resistor area comprising at least one first resistor coupled to the at least one first transistor. The first transistor area and the at least one contact are aligned in a first direction, and the first transistor area and the first resistor area are aligned in a second direction. The second direction may be substantially perpendicular to the first direction. The at least one contact may be one of a substrate contact and a well contact.

A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

The present disclosure provides a semiconductor device that prevents a resistor component connected in series with a base electrode from the electrostatic damage. A semiconductor device includes, a collector layer, which is a first conductivity type semiconductor, a base layer, which is a second conductivity type semiconductor and connected with the collector layer, an emitter layer, which is the first conductivity type semiconductor and connected with the base layer, a first electrode, electrically connected to the base layer, a first resistor component, connected in series with the first electrode in a conductive path connecting the first electrode and the base layer, a second electrode, electrically connected to the emitter layer and the first resistor component; and a protection component, connected to the first electrode in parallel with the first resistor component, wherein the protection component comprises a pair of diodes formed by a pn junction and by a way of making both ends of the conductive path into a same polarity.

A printing apparatus, comprises: a printhead substrate; an application circuit for applying a driving signal to the driving element; a ground line connected to the application circuit; a plurality of temperature sensors that detects temperature relate to the printhead substrate, wherein the cathode side of the plurality of temperature sensors connects the ground line via a resistance; a first selection circuit, on an anode side of the plurality of temperature sensors, that selects one temperature sensor; a second selection circuit, on the cathode side of the plurality of temperature sensor, that selects the one temperature sensor; and a temperature signal output circuit that outputs a temperature signal in accordance with a difference between a voltage of an anode side and a voltage of a cathode side of the selected temperature sensor.

Apparatuses including circuit layout regions of a semiconductor device and methods of designing the circuit layout regions of a semiconductor device are described. An example apparatus includes a first layout region including a first transistor area including at least one first transistor, at least one contact in proximity to the first transistor area, and a first resistor area comprising at least one first resistor coupled to the at least one first transistor. The first transistor area and the at least one contact are aligned in a first direction, and the first transistor area and the first resistor area are aligned in a second direction. The second direction may be substantially perpendicular to the first direction. The at least one contact may be one of a substrate contact and a well contact.

A power amplifier circuit is capable of restraining uneven temperature distribution among a plurality of unit transistors while restraining the deterioration of the characteristics of the power amplifier circuit. The power amplifier circuit includes: a first transistor group which includes a plurality of unit transistors and which amplifies an input signal and outputs an amplified signal; a bias circuit which supplies a bias current or a bias voltage to a base or a gate of each unit transistor of the first transistor group; a plurality of first resistive elements, each of which is connected between the base or the gate of each unit transistor of the first transistor group and an output of the bias circuit; and a plurality of second resistive elements, each of which is connected between an emitter or a source of each unit transistor of the first transistor group and a reference potential.

Disclosed examples provide fabrications methods and integrated circuits with back ballasted NPN bipolar transistors which include an n-type emitter in a P doped region, a p-type base with a first side facing the emitter, and an n-type collector laterally spaced from a second side of the base, where the collector includes a first side facing the second side of the base, an opposite second side, a silicided first collector portion and a silicide blocked second collector portion covered with a non-conductive dielectric that extends laterally between the first collector portion and the second side of the collector to provide back side ballasting for lateral breakdown and low current conduction via a deep N doped region while the vertical NPN turns on at a high voltage.

A semiconductor arrangement is disclosed. The semiconductor arrangement includes: a semiconductor body and a temperature sensor (TES) integrated in the semiconductor body. The TES includes: a first semiconductor region of a first doping type arranged, in a vertical direction of the semiconductor body, between a second semiconductor region of a second doping type and a third semiconductor of the second doping type, and a contact plug ohmically connecting the first semiconductor region and the second semiconductor region. The first semiconductor region includes a base region section spaced apart from the contact plug in a first lateral direction of the semiconductor body and a resistor section arranged between the base region section and the contact plug. The resistor section is implemented such that an ohmic resistance of the resistor section between the base region section and the first semiconductor region is at least 1 M?.

A heterojunction bipolar transistor includes a collector layer, a base layer, an emitter layer, and a ballast resistance layer. The collector layer is made of an n-type compound semiconductor material. The base layer is disposed on the collector layer and is made of a p-type compound semiconductor material. The emitter layer is disposed on the base layer and is made of an n-type compound semiconductor material having a band gap larger than a band gap of the base layer. The ballast resistance layer is disposed on the emitter layer and is made of an intrinsic or p-type compound semiconductor material.

A printing apparatus, comprises: a printhead substrate; an application circuit for applying a driving signal to the driving element; a ground line connected to the application circuit; a plurality of temperature sensors that detects temperature relate to the printhead substrate, wherein the cathode side of the plurality of temperature sensors connects the ground line via a resistance; a first selection circuit, on an anode side of the plurality of temperature sensors, that selects one temperature sensor; a second selection circuit, on the cathode side of the plurality of temperature sensor, that selects the one temperature sensor; and a temperature signal output circuit that outputs a temperature signal in accordance with a difference between a voltage of an anode side and a voltage of a cathode side of the selected temperature sensor.