Embodiments of the disclosure provide a thin-film transistor, an array substrate, a display panel and a display device. The thin-film transistor includes a current enhancement portion, and the current enhancement portion is provided between a drain and a source. The current enhancement portion may include at least one protrusion portion, and the protrusion portion is provided on the drain and/or the source and faces a channel. The current enhancement portion may include an island portion provided between the drain and the source, and the island portion is separate from the drain and the source. The island portion may include at least one protrusion end, and the at least one protrusion end faces the drain and/or the source.

A thin film transistor substrate includes a substrate and a bottom gate-type thin film transistor, in which a gate insulating film is provided, a gate electrode is made of a first conductive film disposed on a lower layer side of the gate insulating film, the gate insulating film includes a first insulating portion overlapping the gate electrode and a second insulating portion that is disposed not to overlap the gate electrode but to overlap the source electrode and the drain electrode, and has a film thickness greater than a film thickness of the first insulating portion, and a lower layer portion that is made of a lower layer film disposed on a lower layer side of the first conductive film and has at least a portion overlapping the gate electrode is provided.

The present disclosure is related to a thin film transistor. The thin film transistor may include a gate pattern; an active layer pattern; a gate insulating layer between the gate pattern and the active layer pattern; a first conductive pattern including a first pattern part and a first connecting part ; a second conductive pattern a second pattern part and a second connecting part; and a first intermediate insulating layer between the first pattern part and the second pattern part. The first conductive pattern and the second conductive pattern may be a source pattern and a drain pattern, respectively. A first through hole may be provided on the first intermediate insulating layer. The second conductive pattern may be connected to the active layer pattern through the second connecting part in the first through hole.

Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

A more convenient and highly reliable semiconductor device which has a transistor including an oxide semiconductor with higher impact resistance used for a variety of applications is provided. A semiconductor device has a bottom-gate transistor including a gate electrode layer, a gate insulating layer, and an oxide semiconductor layer over a substrate, an insulating layer over the transistor, and a conductive layer over the insulating layer. The insulating layer covers the oxide semiconductor layer and is in contact with the gate insulating layer. In a channel width direction of the oxide semiconductor layer, end portions of the gate insulating layer and the insulating layer are aligned with each other over the gate electrode layer, and the conductive layer covers a channel formation region of the oxide semiconductor layer and the end portions of the gate insulating layer and the insulating layer and is in contact with the gate electrode layer.

Disclosed are a thin-film transistor and a preparation method therefor, and a display substrate and a display panel. The thin-film transistor includes: a base substrate; an active layer located on the base substrate; and a source-drain electrode which is located on the side of the active layer facing away from the base substrate, and includes an electrode layer and a protective layer, where the material of the electrode layer includes a first metal element; the protective layer covers the surface of the side of the electrode layer facing away from the base substrate, and a side face of the electrode layer; and the material of the protective layer is an oxide of the first metal element.

A display device includes: a substrate; a semiconductor layer; a gate electrode overlapping the semiconductor layer; a common voltage line disposed on a same layer as the gate electrode; a common voltage line anti-oxidation layer disposed on the common voltage line; an interlayer insulating layer; source and drain electrodes disposed on the interlayer insulating layer; and a common voltage applying electrode disposed on a same layer as the source electrode and the drain electrode. The common voltage applying electrode is connected to the common voltage line through a first contact hole formed in the interlayer insulating layer, the common voltage line anti-oxidation layer includes an opening overlapping the common voltage line, the interlayer insulating layer is disposed in the opening, a width of the opening is smaller than a width of the common voltage line, and the first contact hole is disposed in the opening in a plan view.

A transistor includes a gate electrode, a gate dielectric located over the gate electrode, a channel layer that includes an oxide semiconductor material and that is located over the gate dielectric, a buffer located to cover at least a portion of the channel layer, and source/drain contacts disposed on the buffer. The buffer includes a material that receives hydrogen. A method for manufacturing the transistor is also provided.

The disclosure provides an electronic device. The electronic device includes a substrate, a transistor, and a first insulating layer. The transistor is disposed on the substrate and includes a source electrode, a drain electrode, and a gate electrode. The first insulating layer is disposed between the source electrode and the gate electrode and between the drain electrode and the gate electrode. The first insulating layer has a first portion and a second portion. The first portion is defined as a portion overlapped with the source electrode and the drain electrode. The second portion is defined as a portion not overlapped with the source electrode and the drain electrode. A thickness of the first portion is greater than a thickness of the second portion. The electronic device of an embodiment of the disclosure may reduce transistor characteristic shift or improve transistor performance.

A transistor with stable electrical characteristics. A semiconductor device includes a first insulator over a substrate, a second insulator over the first insulator, an oxide semiconductor in contact with at least part of a top surface of the second insulator, a third insulator in contact with at least part of a top surface of the oxide semiconductor, a first conductor and a second conductor electrically connected to the oxide semiconductor, a fourth insulator over the third insulator, a third conductor which is over the fourth insulator and at least part of which is between the first conductor and the second conductor, and a fifth insulator over the third conductor. The first insulator contains a halogen element.