A semiconductor device in which a circuit and a battery are efficiently stored is provided. In the semiconductor device, a first transistor, a second transistor, and a secondary battery are provided over one substrate. A channel region of the second transistor includes an oxide semiconductor. The secondary battery includes a solid electrolyte, and can be fabricated by a semiconductor manufacturing process. The substrate may be a semiconductor substrate or a flexible substrate. The secondary battery has a function of being wirelessly charged.

Occurrence of short-channel characteristics and parasitic capacitance of a MOSFET on a SOI substrate is prevented. A sidewall having a stacked structure obtained by sequentially stacking a silicon oxide film and a nitride film is formed on a side wall of a gate electrode on the SOI substrate. Subsequently, after an epitaxial layer is formed beside the gate electrode, and then, the nitride film is removed. Then, an impurity is implanted into an upper surface of the semiconductor substrate with using the gate electrode and the epitaxial layer as a mask, so that a halo region is formed in only a region of the upper surface of the semiconductor substrate which is right below a vicinity of both ends of the gate electrode.

A display device includes a substrate, a first insulating layer on the substrate and including a flat upper surface, a first conductive layer on the substrate, the first conductive layer including first to third light blocking patterns separated from one another, a second insulating layer on the first conductive layer, and pixel electrodes on the second insulating layer. The pixel electrodes includes a first pixel electrode in a first color pixel and in the first light blocking pattern in a first direction in a plan view, and a second pixel electrode in a second color pixel and covering the second and third light blocking patterns in the first direction, the second insulating layer includes first and second areas respectively overlapping the first and second pixel electrodes, and each of the upper surfaces of the first and second areas includes a curved surface with a concave central portion.

A display device having a plurality of pixel structures, each of the plurality of the pixel structures including: a substrate; a first active pattern on the substrate; a first gate line on the first active pattern and extending in a first direction; a first connecting pattern on the first gate line and configured to transmit an initialization voltage; a second connecting pattern on the first connecting pattern and electrically connected to the first active pattern and the first connecting pattern; and a first electrode on the second connecting pattern and configured to be initialized in response to the initialization voltage.

There are provided a nanometer semiconductor device with a high-quality epitaxial layer and a method of manufacturing the same. According to an embodiment, the semiconductor device may include: a substrate; at least one nanowire spaced apart from the substrate; at least one semiconductor layer, each formed around a periphery of respective one of the at least one nanowire to at least partially surround the corresponding nanowire, wherein the semiconductor layer(s) formed around the respective nanowire(s) are separated from each other; an isolation layer formed on the substrate, exposing the at least one semiconductor layer; and a gate stack formed on the isolation layer and intersecting the at least one semiconductor layer, wherein the gate stack includes a gate dielectric layer at least partially surrounding a periphery of respective one of the at least one semiconductor layer and a gate conductor layer.

A display may have an array of pixels each of which has a light-emitting diode such as an organic light-emitting diode. A drive transistor and an emission transistor may be coupled in series with the light-emitting diode of each pixel between a positive power supply and a ground power supply. The pixels may include first and second switching transistors. A data storage capacitor may be coupled between a gate and source of the drive transistor in each pixel. Signal lines may be provided in columns of pixels to route signals such as data signals, sensed drive currents from the drive transistors, and predetermined voltages between display driver circuitry and the pixels. The switching transistors, emission transistors, and drive transistors may include semiconducting-oxide transistors and silicon transistors and may be n-channel transistors or p-channel transistors.

A display apparatus includes a substrate including a display area including a display element, a first thin film transistor disposed in the display area, the first thin film transistor including a first semiconductor layer including a silicon semiconductor and a first gate electrode insulated from the first semiconductor layer, a second thin film transistor disposed in the display area, the second thin film transistor including a second semiconductor layer including an oxide semiconductor and a second gate electrode insulated from the second semiconductor layer, a first signal line extending at a side of the first thin film transistor in a first direction, a second signal line extending at an opposite side of the first thin film transistor in the first direction, and a shielding pattern extending in the first direction, the shielding pattern at least partially overlapping the first signal line.

Some embodiments include an integrated assembly having a pillar of semiconductor material. The pillar has a base region, and bifurcates into two segments which extend upwardly from the base region. The two segments are horizontally spaced from one another by an intervening region. A conductive gate is within the intervening region. A first source/drain region is within the base region, a second source/drain region is within the segments, and a channel region is within the segments. The channel region is adjacent to the conductive gate and is vertically disposed between the first and second source/drain regions. Some embodiments include methods of forming integrated assemblies.

A semiconductor device includes a drain, a source, a gate electrode, and a nanowire between the source and drain. The nanowire has a first section with a first thickness and a second section with a second thickness greater than the first thickness. The second section is between the first section and at least one of the source or drain. The first nanowire includes a channel when a voltage is applied to the gate electrode.

Embodiments described herein may be related to forming nano ribbon transistors using layered 2D semiconductor channels. The layered 2D semiconductor channels may be created by forming a scaffold structure that has a first edge that extends from a silicon-based substrate, and a second edge opposite the first edge that is distal to the silicon based substrate. Alternating layers of 2D semiconductor material and a 3D semiconductor material may then be built on the second edge of the scaffold structure. In embodiments, the 3D semiconductor material may then be removed and a gate material deposited around at least a portion of the layers of 2D semiconductor material.