Embodiments of mechanisms for testing a die package with multiple packaged dies on a package substrate use an interconnect substrate to provide electrical connections between dies and the package substrate and to provide probing structures (or pads). Testing structures, including daisy-chain structures, with metal lines to connect bonding structures connected to signals, power source, and/or grounding structures are connected to probing structures on the interconnect substrate. The testing structures enable determining the quality of bonding and/or functionalities of packaged dies bonded. After electrical testing is completed, the metal lines connecting the probing structures and the bonding structures are severed to allow proper function of devices in the die package. The mechanisms for forming test structures with probing pads on interconnect substrate and severing connecting metal lines after testing could reduce manufacturing cost.

The present invention discloses a modularized circuit for isolated circuit, wherein the isolated circuit includes at least two circuit components connecting in parallel and/or series, the circuit components, according to a circuit connection configuration, weld corresponding pins of the components directly, forming an integrated module in accordance with a desired connection method of the circuit, and saving circuit boards and wires; the circuit components are designed as a parallelepiped, and a plurality of bonding pads are arranged on part of an area on a surface of the parallelepiped. Due to constructing a circuit unit by welding connections in a way of building blocks, welding directly between components in a 3D space, comparing to the circuits limited in a circuit board plane as a PCB, it owns a wider design space.

Embodiments of mechanisms for testing a die package with multiple packaged dies on a package substrate use an interconnect substrate to provide electrical connections between dies and the package substrate and to provide probing structures (or pads). Testing structures, including daisy-chain structures, with metal lines to connect bonding structures connected to signals, power source, and/or grounding structures are connected to probing structures on the interconnect substrate. The testing structures enable determining the quality of bonding and/or functionalities of packaged dies bonded. After electrical testing is completed, the metal lines connecting the probing structures and the bonding structures are severed to allow proper function of devices in the die package. The mechanisms for forming test structures with probing pads on interconnect substrate and severing connecting metal lines after testing could reduce manufacturing cost.

A semiconductor die and a method for manufacturing a semiconductor die are disclosed. In an embodiment a semiconductor die includes a base body having a semiconductor material and a surface with two contact areas having contact pads at which the semiconductor die is electrically contactable and two metal caps arranged directly at the contact pads.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

Group III-nitride devices are described that include a stack of III-nitride layers, passivation layers, and conductive contacts. The stack includes a channel layer with a 2DEG channel, a barrier layer and a spacer layer. One passivation layer directly contacts a surface of the spacer layer on a side opposite to the channel layer and is an electrical insulator. The stack of III-nitride layers and the first passivation layer form a structure with a reverse side proximate to the first passivation layer and an obverse side proximate to the barrier layer. Another passivation layer is on the obverse side of the structure. Defected nucleation and stress management layers that form a buffer layer during the formation process can be partially or entirely removed.

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

A chip package and manufacturing method is disclosed. In one example, the method includes forming a carrier wafer with a plurality of trenches, each trench being at least partially covered with an electrically conductive sidewall coating. A semiconductor wafer is bonded on a front side of the carrier wafer. An electrically conductive connection structure is formed, including at least partially bridging a gap between the electrically conductive sidewall coating and an integrated circuit element of a respective one of the electronic chips. Material on a backside of the carrier wafer is removed to singularize the bonded wafers at the trenches into a plurality of semiconductor devices.

The present disclosure provides a method far preparing a semiconductor package. The semiconductor package includes a semiconductor device having an upper surface and a side, wherein the upper surface and the side form a corner of the semiconductor device. The semiconductor package also includes a lateral bump structure disposed on the side and implementing a lateral signal path of the semiconductor device. The semiconductor package further includes a vertical hump structure disposed over the upper surface and implementing a vertical signal path of the semiconductor device.