H01L2224/08502

LOW TEMPERATURE BONDED STRUCTURES

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

DISPLAY BACKPLANE ASSEMBLY, LED DISPLAY MODULE, AND RELATED METHODS FOR MANUFACTURING THE SAME
20230275076 · 2023-08-31 ·

A display backplane assembly, a light-emitting diode (LED) display module and a device, and related methods for manufacturing the same are provided in the disclosure. The display backplane assembly includes a display backplane and a planarization layer. The display backplane has a first surface, and electrode connecting pads are disposed on the first surface. The planarization layer is stacked on the first surface and defines multiple accommodating holes extending in a thickness direction of the planarization layer. The multiple accommodating holes correspond to the electrode connection pads. Each of the multiple accommodating holes includes a first hole and a second hole. A bonding material is filled in the first hole and in contact with the electrode connection pad. An adhesive is filled in the second hole.

LOW TEMPERATURE BONDED STRUCTURES

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

DIFFUSION BARRIERS AND METHOD OF FORMING SAME
20230132632 · 2023-05-04 ·

An element that is configured to bond to another element to define a bonded structure is disclosed. The element can include a dielectric bonding layer having a cavity that extends at least partially through a thickness of the dielectric bonding layer from a surface of the dielectric bonding layer. The element can also include a conductive feature that is at least partially disposed in the cavity. The conductive feature has a contact surface. The element can include a diffusion barrier layer between the conductive feature and a portion of the dielectric bonding layer. The barrier layer includes a barrier metal. The barrier metal of the diffusion barrier layer has an oxidation propensity that is greater than an oxidation propensity of the conductive feature.

LOW TEMPERATURE BONDED STRUCTURES

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

FLEXIBLE PRINTED CIRCUIT BOARD AND METHOD OF MANUFACTURING FLEXIBLE PRINTED CIRCUIT BOARD
20200335429 · 2020-10-22 ·

According to one aspect of the present disclosure, a flexible printed circuit board includes: an insulating base film; a first conductive pattern that is layered on the base film and that is coated with gold, nickel, or an anti-rust material; and a second conductive pattern that is layered on the base film and that is coated with tin or solder.

Low temperature bonded structures

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second metallic interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

Method for Producing a Connection Between Component Parts, and Component Made of Component Parts

A method for producing a connection between component parts and a component made of component parts are disclosed. In an embodiment, a includes providing a first component part having a first exposed insulation layer and a second component part having a second exposed insulation layer, wherein each of the insulation layers has at least one opening, joining together the first and second component parts such that the opening of the first insulation layer and the opening of the second insulation layer overlap in top view, wherein an Au layer and a Sn layer are arranged one above the other in at least one of the openings and melting the Au layer and the Sn layer to form an AuSn alloy, wherein the AuSn alloy forms a through-via after cooling electrically conductively connecting the first component part to the second component part.

LOW TEMPERATURE BONDED STRUCTURES

Devices and techniques including process steps make use of recesses in conductive interconnect structures to form reliable low temperature metallic bonds. A fill layer is deposited into the recesses prior to bonding. First conductive interconnect structures are bonded at ambient temperatures to second conductive interconnect structures using direct bonding techniques, with the fill layers in the recesses in one or both of the first and second interconnect structures.

Display device and method for manufacturing the same

A method for manufacturing a display device includes preparing a circuit board including a drive circuit for driving a LED chip, forming a connecting electrode on the circuit board, forming an adhesive layer on the connecting electrode, adhering a terminal electrode of the LED chip on the adhesive layer and joining the connecting electrode and the terminal electrode by irradiating a laser light. The adhesive layer may be formed only on a upper surface of the connecting electrode.