A module structure comprises a patterned substrate having a substrate surface and comprising a substrate post protruding from the substrate surface. A component is disposed on the substrate post. The component has a component top side and a component bottom side opposite the component top side. The component bottom side is disposed on the substrate post. The component extends over at least one edge of the substrate post. One or more component electrodes are disposed on the component.

A cavity structure comprises a cavity substrate comprising a substrate surface, one or more cavity walls extending from the substrate surface, a cap disposed on the one or more cavity walls, and at least a portion of a module tether physically attached to the cavity substrate. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume, for example enclosing a vacuum, air, an added gas, or a liquid. The cavity structure can be a micro-transfer printable structure provided on a cavity structure source wafer. A plurality of cavity structures can be disposed on a destination substrate, for example by transfer printing, dry contact printing, or micro-transfer printing.

A cavity structure comprises a cavity substrate comprising a substrate surface, one or more cavity walls extending from the substrate surface, a cap disposed on the one or more cavity walls, and at least a portion of a module tether physically attached to the cavity substrate. The cavity substrate, the cap, and the one or more cavity walls form a cavity enclosing a volume, for example enclosing a vacuum, air, an added gas, or a liquid. The cavity structure can be a micro-transfer printable structure provided on a cavity structure source wafer. A plurality of cavity structures can be disposed on a destination substrate, for example by transfer printing, dry contact printing, or micro-transfer printing.

One aspect relates to a method for manufacturing a substrate assembly for attachment to an electronic component A substrate is provided with a first side and a second side. A contact material layer is applied to the first side of the substrate. A pre-fixing agent is applied at least to sections of a side of the contact material layer facing away from the substrate.

A sintering powder comprising copper particles, wherein: the particles are at least partially coated with a capping agent, and the particles exhibit a D10 of greater than or equal to 100 nm and a D90 of less than or equal to 2000 nm.

A semiconductor device of the present invention includes a circuit layer formed of a conductive material, a semiconductor element mounted on a first surface of the circuit layer, and a ceramic substrate disposed on a second surface of the circuit layer, in which a Ag underlayer having a glass layer and a Ag layer laminated on the glass layer is formed on the first surface of the circuit layer, and the Ag layer of the Ag underlayer and the semiconductor element are directly joined together.

A cover film includes a release layer and a polyimide layer disposed on the release layer. The polyimide layer includes an inner surface and an outer surface opposite to the inner surface. The outer surface is exposed to the atmosphere, and the polyimide layer is formed from a reaction of a polyimide composition made of diamine monomer and tetracarboxylic dianhydride monomer. The polyimide layer further includes a cross-linker and an initiator. The diamine monomer is an aliphatic diamine monomer with a number of carbon greater than or equal to 36. A lowest viscosity of the polyimide layer is less than 20000 Pa.Math.s when polyimide layer is under a temperature in a range of 60 C. to 160 C.

A joined body includes a first substrate, a second substrate which faces the first substrate, and a joining film which joins the first substrate to the second substrate, wherein the joining film has a first region and a second region, and in a plan view of the first substrate, the first region has a higher metal nanoparticle density than the second region.

The present disclosure provides a method of transferring an electronic element using a stamping and magnetic field alignment technology and an electronic device including an electronic element transferred using the method. In the present disclosure, a polymer may be simultaneously coated on a plurality of electronic elements using the stamping process, and the polymer may be actively coated on the electronic elements without restrictions on process parameters such as size and spacing of the electronic elements. Moreover, the self-aligned ferromagnetic particles have an anisotropic current flow through which current flows only in the aligned direction. Therefore, the current may flow only vertically between the electronic element and the electrode, and there is no electrical short circuit between a peripheral LED element and the electrode.

An Ag underlayer-attached metallic member includes a metallic member joined with a body to be joined and an Ag underlayer formed on a joining surface of the metallic member with the body to be joined, the Ag underlayer includes a glass layer formed on a metallic member side and an Ag layer laminated on the glass layer, and an area proportion of voids in an Ag layer surface of the Ag underlayer is 25% or less.