A power semiconductor device includes a substrate and a semiconductor element bonded onto a first surface of the substrate through use of a sintered metal bonding material. The substrate has a plurality of dimples formed in the first surface and located outside a location immediately below a heat generation unit of the semiconductor element. The sintered metal bonding material is supplied onto the substrate after the formation of the dimples, and the semiconductor element is bonded to the substrate through application of heat and a pressure thereto.

In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion.

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, a die and a first adhesive layer; a surface of the substrate is provided with an insulation layer; the die is arranged on a surface of the insulation layer via the first adhesive layer; the insulation layer is provided with at least one hole slot; a position of the at least one hole slot corresponds to at least a part of an edge of the first adhesive layer; a second adhesive layer is arranged in the at least one hole slot; at least a part of a surface of the second adhesive layer is connected with the first adhesive layer; and an elasticity modulus of the second adhesive layer is smaller than an elasticity modulus of the first adhesive layer.

The present disclosure provides a semiconductor structure and a manufacturing method thereof. The semiconductor structure includes a substrate, a die and a first adhesive layer; a surface of the substrate is provided with an insulation layer; the die is arranged on a surface of the insulation layer via the first adhesive layer; the insulation layer is provided with at least one slot; a position of the at least one slot corresponds to at least a part of an edge of the first adhesive layer; a second adhesive layer is arranged in the at least one slot; at least a part of a surface of the second adhesive layer is connected with the first adhesive layer; and an elasticity modulus of the second adhesive layer is smaller than an elasticity modulus of the first adhesive layer.

There is provided a semiconductor device including: a semiconductor element; a support substrate configured to support the semiconductor element; an intermediate metal layer interposed between the semiconductor element and the support substrate in a thickness direction of the support substrate, wherein the semiconductor element and the intermediate metal layer are bonded by solid phase diffusion bonding; and a first positioning portion including a portion of the semiconductor element and a first portion of the intermediate metal layer and configured to suppress relative movement between the semiconductor element and the intermediate metal layer.

The present disclosure provides a light-emitting diode, a method for manufacturing the same, a backlight source and a display device. The light-emitting diode includes a support having a bottom wall, a light-emitting chip on the support, and a die bonding structure. A through hole is provided in the bottom wall. At least a portion of the die bonding structure is located in the through hole. The light-emitting chip is attached to the bottom wall through the die bonding structure.

A light conversion device includes a light-emitting unit, a photoelectric conversion unit, and an electroconductive bonding layer. Each of the light-emitting unit and the photoelectric conversion unit includes a first-type region and a second-type region opposite to the first-type region. The electroconductive bonding layer is disposed between the light-emitting unit and the photoelectric conversion unit for connecting the photoelectric conversion unit with the light-emitting unit. When the photoelectric conversion device is operated to receive a bias and an external light, the light-emitting unit generates a modulated light different from the external light in frequency.

A semiconductor structure includes a first component and a second component bonded thereof. The first component includes a first interlayer dielectric (ILD) layer, a first interconnect structure, a first seal ring, and a first bonding layer. The first interconnect structure is in the first ILD layer and surrounded by the first seal ring. The first bonding layer covers the first ILD layer and the first interconnect structure, and has a portion surrounds the first seal ring. The second component includes a second ILD layer, a second interconnect structure, a second seal ring, and a second bonding layer. The second interconnect structure is in the second ILD layer and surrounded by the second seal ring. The second bonding layer is in contact with the first bonding layer and covers the second ILD layer and the second interconnect structure, and has a portion surrounds the second seal ring.

The present invention relates to a method of manufacturing a power device and a structure of the power device, which is used to solve the problem that conventional power device needs to be independently packaged and requires a welding process. The method includes: forming a plurality of semiconductor device layers spaced in intervals on a front of a silicon wafer; excavating a plurality of grooves on the front of the silicon wafer to separate the plurality of semiconductor device layers; filling each of the plurality of grooves with each of a plurality of first spacer materials; grinding a back of the silicon wafer until the first spacer materials being exposed; attaching a plurality of metal layers to a region of the back of the silicon wafer opposite to the plurality of semiconductor device layers; and electrically connecting each of independent plurality of lead frames to the plurality of metal layers respectively. The present invention further includes the structure of the power device.

The present invention relates to a method of manufacturing a power device and a structure of the power device, which is used to solve the problem that conventional power device needs to be independently packaged and requires a welding process. The method includes: forming a plurality of semiconductor device layers spaced in intervals on a front of a silicon wafer; excavating a plurality of grooves on the front of the silicon wafer to separate the plurality of semiconductor device layers; filling each of the plurality of grooves with each of a plurality of first spacer materials; grinding a back of the silicon wafer until the first spacer materials being exposed; attaching a plurality of metal layers to a region of the back of the silicon wafer opposite to the plurality of semiconductor device layers; and electrically connecting each of independent plurality of lead frames to the plurality of metal layers respectively. The present invention further includes the structure of the power device.