H01L2224/29034

SEMICONDUCTOR DEVICE PACKAGES AND METHODS OF MANUFACTURING THE SAME

A semiconductor device package includes a connection structure having a first portion and a second portion extending from the first portion, the second portion having a width less than the first portion; and a dielectric layer surrounding the connection structure, wherein the dielectric layer and the second portion of the connection structure defines a space.

SEMICONDUCTOR PACKAGE STRUCTURE

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

DISPLAY DEVICE
20200402967 · 2020-12-24 ·

A display device includes: an array substrate including a display area, of an image, including a plurality of pixels arranged in an array; a first circuit that is disposed at the array substrate to face an end of the display area, and controls drive of the plurality of pixels; and a second circuit that controls drive of the first circuit. The first circuit includes a plurality of first terminals arranged on the array substrate. The first circuit includes a plurality of second terminals each connected by at least one wire bond to a corresponding one of a plurality of terminals included in the second circuit.

Electronic component device

An electronic component device includes a first lead frame having a first connection terminal and an electronic component. The first connection terminal includes a first metal electrode, a first pad part formed on an upper surface of the first metal electrode and formed by a metal plated layer, and a first metal oxide layer formed on an upper surface of the first metal electrode in a surrounding region of the first pad part so as to surround an outer periphery of the first pad part. The electronic component has a first terminal part provided on its lower surface. The first terminal part of the electronic component is connected to the first pad part of the first connection terminal via a metal joining material.

Semiconductor package structure

A semiconductor package structure includes an organic substrate having a first surface, a first recess depressed from the first surface, a first chip over the first surface and covering the first recess, thereby defining a first cavity enclosed by a back surface of the first chip and the first recess, and a second chip over the first chip. The first cavity is an air cavity or a vacuum cavity.

High reliability wafer level semiconductor packaging

Implementations of semiconductor packages may include: a semiconductor wafer, a glass lid fixedly coupled to a first side of the semiconductor die by an adhesive, a redistribution layer coupled to a second side of the semiconductor die, and a plurality of ball mounts coupled to the redistribution layer on a side of the redistribution layer coupled to the semiconductor die. The adhesive may be located in a trench around a perimeter of the semiconductor die and located in a corresponding trench around a perimeter of the glass lid.

TRANSCEIVER DIE INTERCONNECT INTERFACES

Embodiments may relate to a microelectronic package that includes a package substrate and a signal interconnect coupled with the face of the package substrate. The microelectronic package may further include a ground interconnect coupled with the face of the package substrate. The ground interconnect may at least partially surround the signal interconnect. Other embodiments may be described or claimed.

Wafer-level packaging methods using a photolithographic bonding material

A wafer-level packaging method includes providing a base substrate and providing first chips. A photolithographic bonding layer is formed on the base substrate or on the first chips. First vias are formed in the photolithographic bonding layer. The first chips are pre-bonded to the base substrate through a photolithographic bonding layer with each first chip corresponding to a first via. A thermal compression bonding process is used to bond the first chips to the base substrate such that an encapsulation material fills between adjacent first chips and covers the first chips and the base substrate. The base substrate is etched to form second vias through the base substrate with each second via connected to a first via to form a first conductive via. A first conductive plug is formed in the first conductive via to electrically connect to a corresponding first chip.

Substrates, assembles, and techniques to enable multi-chip flip chip packages

Substrates, assemblies, and techniques for enabling multi-chip flip chip packages are disclosed herein. For example, in some embodiments, a package substrate may include a first side face; a second side face, wherein the second side face is opposite to the first side face along an axis; a portion of insulating material extending from the first side face to the second side face; wherein a cross-section of the portion of insulating material taken perpendicular to the axis has a stairstep profile. Solder pads may be disposed at base and step surfaces of the portion of insulating material. One or more dies may be coupled to the package substrate (e.g., to form a multi-chip flip chip package), and in some embodiments, additional IC packages may be coupled to the package substrate. In some embodiments, the package substrate may be reciprocally symmetric or approximately reciprocally symmetric.

WAFER-LEVEL PACKAGING METHODS USING A PHOTOLITHOGRAPHIC BONDING MATERIAL
20200135689 · 2020-04-30 ·

A wafer-level packaging method using a photolithographic bonding material includes providing a base substrate; providing a plurality of first chips; forming a photolithographic bonding layer on the base substrate or on the first chips; forming a plurality of first vias in the photolithographic bonding layer; pre-bonding the first chips to the base substrate through the photolithographic bonding layer with each first chip corresponding to a first via; using a thermal compression bonding process to bond the first chips to the base substrate such that an encapsulation material fills between adjacent first chips and covers the first chips and the base substrate; etching the base substrate to form a plurality of second vias through the base substrate with each second via connected to a first via to form a first conductive via; and forming a first conductive plug in the first conductive via to electrically connect to a corresponding first chip.