One of semiconductor packages includes a substrate and a package structure. The package structure is bonded to the substrate and includes a first redistribution layer structure, a first logic die, a plurality of second logic dies, a first memory die, a first heat conduction block and a first encapsulant. The first logic die and the second logic dies are disposed over and electrically connected to the first redistribution layer structure. The first memory die is disposed over the first logic die and the second logic dies and electrically connected to first redistribution layer structure. The first heat conduction block is disposed over the first logic die and the second logic dies. The first encapsulant encapsulates the first memory die and the first heat conduction block.

A display device includes an active panel including a display area including a plurality of pixels and a non-display area surrounding the display area, the non-display area including an adjacent area adjacent to the display area and bending areas spaced from the display area by the adjacent area, the bending areas including a connection electrode and a first driving panel in contact with a first bending area of the active panel by a first connection member, and electrically coupled to the active panel. Each of the bending areas is bent in a direction perpendicular to a plane formed by the display area, and the active panel includes an opening in the first bending area exposing the connection electrode, and the first connection member is configured to couple a first signal from the first driving panel to the active panel through the connection electrode.

Chip sealing designs to accommodate die-to-die communication are described. In an embodiment, a chip structure includes a split metallic seal structure including a lower metallic seal and an upper metallic seal with overlapping metallization layers, and a through seal interconnect navigating through the split metallic seal structure.

A display device includes a first substrate including a display area and a non-display area adjacent to the display area, a first voltage line disposed on the first substrate and supplying a first voltage, a second substrate disposed on the first voltage line, and a thin film transistor layer disposed on the second substrate and comprising a plurality of thin film transistors and a second voltage line disposed in the non-display area and electrically connected to the first voltage line through a first contact hole penetrating the second substrate.

An embodiment a structure including a first semiconductor device bonded to a first side of a first redistribution structure by first conductive connectors, the first semiconductor device comprising a first plurality of passive elements formed on a first substrate, the first redistribution structure comprising a plurality of dielectric layers with metallization patterns therein, the metallization patterns of the first redistribution structure being electrically coupled to the first plurality of passive elements, a second semiconductor device bonded to a second side of the first redistribution structure by second conductive connectors, the second side of the first redistribution structure being opposite the first side of the first redistribution structure, the second semiconductor device comprising a second plurality of passive elements formed on a second substrate, the metallization patterns of the first redistribution structure being electrically coupled to the second plurality of passive elements.

A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Provided is a tiled display device. The tiled display device includes adjacent first and second display devices including a display area having pixels, a bonding area between the display areas of the first and second display devices, data lines extending in a first direction, first gate lines extending in the first direction, and configured to transmit a gate signal, and off voltage lines extending in the first direction, and configured to transmit an off voltage, wherein one of the off voltage lines is between a first pixel at an outermost side of the first display device and a second pixel located more inwardly than first pixel, and wherein the off voltage lines are not between a third pixel at an outermost side of the second display device and the first pixel.

A package structure and a formation method of a package structure are provided. The method includes forming multiple conductive vias in a carrier substrate and forming a redistribution structure over the carrier substrate. The redistribution structure has multiple polymer-containing layers and multiple conductive features. The method also includes disposing multiple chip structures over the redistribution structure. The method further includes bonding the carrier substrate to a package structure.

A display panel includes a first sub-display panel, a second sub-display panel adjacent to the first sub-display panel in a first direction, and a connection member electrically connecting the first sub-display panel to the second sub-display panel. The first sub-display panel includes a first pixel, a second pixel between and adjacent to the first pixel and the second sub-display panel, a first low power voltage line for transferring a power voltage to the first pixel, and a first gate line electrically connected to the first pixel and the second pixel, the second pixel receives the power voltage from the first low power voltage line, the second sub-display panel includes a third pixel adjacent to the first sub-display panel, and the third pixel is electrically connected to the first gate line.

A semiconductor package includes a first semiconductor chip, a second semiconductor chip on the first semiconductor chip, a first semiconductor structure and a second semiconductor structure that are on the first semiconductor chip and spaced apart from each other across the second semiconductor chip, and a resin-containing member between the second semiconductor chip and the first semiconductor structure and between the second semiconductor chip and the second semiconductor structure. The semiconductor package may be fabricated at a wafer level.