A semiconductor memory includes a substrate, a memory controller, a plurality of memory modules, and a cover layer. The memory controller is provided on an upper surface of the substrate. Each of the memory modules partially covers an upper surface of the memory controller and the upper surface of the substrate through at least an adhesive layer. The cover layer is on the upper surface of the substrate and encloses the memory controller and the plurality of memory modules between the substrate and the cover layer.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing an electronic assembly features a semiconductor device with a first side and a second side opposite the first side to facilitate enhanced thermal dissipation. The first side has a first conductive pad. The second side has a primary metallic surface. By heating the assembly once, a first substrate (e.g. lead frame) is bonded to a first conductive pad via first metallic bonding layer; and second substrate (e.g., heat sinking circuit board) is bonded to a primary metallic surface via a second metallic bonding layer. In one configuration the second metallic bonding layer is composed of solder and copper, for example.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A semiconductor memory includes a substrate, a memory controller, a plurality of memory modules, and a cover layer. The memory controller is provided on an upper surface of the substrate. Each of the memory modules partially covers an upper surface of the memory controller and the upper surface of the substrate through at least an adhesive layer. The cover layer is on the upper surface of the substrate and encloses the memory controller and the plurality of memory modules between the substrate and the cover layer.

Embodiments of the present disclosure describe scalable package architecture of an integrated circuit (IC) assembly and associated techniques and configurations. In one embodiment, an integrated circuit (IC) assembly includes a package substrate having a first side and a second side disposed opposite to the first side, a first die having an active side coupled with the first side of the package substrate and an inactive side disposed opposite to the active side, the first die having one or more through-silicon vias (TSVs) configured to route electrical signals between the first die and a second die, and a mold compound disposed on the first side of the package substrate, wherein the mold compound is in direct contact with a sidewall of the first die between the active side and the inactive side and wherein a distance between the first side and a terminating edge of the mold compound that is farthest from the first side is equal to or less than a distance between the inactive side of the first die and the first side. Other embodiments may be described and/or claimed.

A method for manufacturing connection structure, the method includes arranging conductive particles and a first composite on a first electrode located on a first surface of a first member, arranging a second composite on the first electrode and a region other than the first electrode of the first surface, arranging the first surface and a second surface of a second member where a second electrode is located, so that the first electrode and the second electrode are opposed to each other, pressing the first member and the second member, and curing the first composite and the second composite.

A method for manufacturing an electronic assembly features a semiconductor device with a first side and a second side opposite the first side to facilitate enhanced thermal dissipation. The first side has a first conductive pad. The second side has a primary metallic surface. By heating the assembly once, a first substrate (e.g. lead frame) is bonded to a first conductive pad via first metallic bonding layer; and second substrate (e.g., heat sinking circuit board) is bonded to a primary metallic surface via a second metallic bonding layer. In one configuration the second metallic bonding layer is composed of solder and copper, for example.

In accordance with one aspect of the disclosure, an electronic assembly comprises a semiconductor device with a first side and a second side opposite the first side. The first side has a first conductive pad. The second side has a primary metallic surface. A first substrate (e.g. lead frame) is bonded to a first conductive pad via first metallic bonding layer. A second substrate (e.g., heat sinking circuit board) is bonded to a primary metallic surface via a second metallic bonding layer. In one configuration the second metallic bonding layer is composed of solder and copper, for example.