A method of forming a semiconductor package is provided. The method includes forming a metallization stack over a semiconductor die. Polymer particles are mounted over the metallization stack. Each of the polymer particles is coated with a first bonding layer. A heat spreader lid is bonded with the semiconductor die by reflowing the first bonding layer. A composite thermal interface material (TIM) structure is formed between the heat spreader lid and the semiconductor die during the bonding. The composite TIM structure includes the first bonding layer and the polymer particles embedded in the first bonding layer.

The resin material 336 is arranged in a first region 421 surrounded by the fin base 440, the inclined portion 343 of the cover member 340, and the outermost peripheral heat dissipation fins 334 arranged on the outermost peripheral side. Then, the resin material 336 is caused to protrude to the first region 421. That is, the resin material 336 is arranged in the first region 421. In a cross section perpendicular to the refrigerant flow direction (Y direction), a cross-sectional area of the first region 421 is larger than an average cross-sectional area 423 of the adjacent heat dissipation fins 331. Then, a cross-sectional area of a second region 422 formed between the resin material 336 arranged in the first region 421 and the outermost peripheral heat dissipation fin 334 arranged on the outermost peripheral side is smaller than the average cross-sectional area 423 of the heat dissipation fins.

A semiconductor device assembly includes a first remote distribution layer (RDL), the first RDL comprising a lower outermost planar surface of the semiconductor device assembly; a first semiconductor die directly coupled to an upper surface of the first RDL by a first plurality of interconnects; a second RDL, the second RDL comprising an upper outermost planar surface of the semiconductor device assembly opposite the lower outermost planar surface; a second semiconductor die directly coupled to a lower surface of the second RDL by a second plurality of interconnects; an encapsulant material disposed between the first RDL and the second RDL and at least partially encapsulating the first and second semiconductor dies; and a third plurality of interconnects extending fully between and directly coupling the upper surface of the first RDL and the lower surface of the second RDL.

A semiconductor package includes; a package substrate including an upper surface with a bonding pad, a lower semiconductor chip disposed on the upper surface of the package substrate, wherein an upper surface of the lower semiconductor chip includes a connect edge region including a connection pad and an open edge region including a dam structure including dummy bumps, a bonding wire having a first height above the upper surface of the lower semiconductor chip and connecting the bonding pad and the connection pad, an upper semiconductor chip disposed on the upper surface of the lower semiconductor chip using an inter-chip bonding layer, and a molding portion on the package substrate and substantially surrounding the lower semiconductor chip and the upper semiconductor chip.

A semiconductor package including a first substrate including a first bump pad and a filling compensation film (FCF) around the first bump pad; a second substrate facing the first substrate and including a second bump pad; a bump structure (BS) in contact with the first bump pad and the second bump pad; and a non-conductive film (NCF) surrounding the BS and between the first substrate and the second substrate, wherein the NCF covers an upper surface and an edge of the FCF.

Provided are a semiconductor device, a busbar, and a power converter that can suppress an increase in the size of the device and in inductance while ensuring insulation performance between terminals. For example, a semiconductor device 1 includes a first terminal 110 projecting from a sealing body 100 along a given direction, and a second terminal 120 adjacent to the first terminal 110 with a space formed between the second terminal 120 and the first terminal 110, the second terminal 120 projecting from the sealing body 100 along a given direction in a direction of projection that is the same as a direction of projection of the first terminal 110. The first terminal 110 has a first exposed part 112 exposed outside the sealing body 100. The second terminal 120 has a second sheathed part 121 projecting from the sealing body 100, the second sheathed part 121 being sheathed with an insulating material, and a second exposed part 122 projecting from the second sheathed part 121, the second exposed part 122 being exposed outside the sealing body 100. A distance D2 along a given direction from a front end 121a of the second sheathed part 121 to the sealing body 100 is longer than a distance D1 along the given direction from a front end 112a of the first exposed part 112 to the sealing body 100.

A semiconductor device such as a chip-scale package is provided. Aspects of the present disclosure further relate to a method for manufacturing such a device. According to an aspect of the present disclosure, a semiconductor device is provided that includes a conformal coating arranged on its sidewalls and on the perimeter part of the semiconductor die of the semiconductor device. To prevent the conformal coating from covering unwanted areas, such as electrical terminals, a sacrificial layer is arranged prior to arranging the conformal coating. By removing the sacrificial layer, the conformal coating can be removed locally. The conformal coating covers the perimeter part of the semiconductor die by the semiconductor device, in which part a remainder of a sawing line or dicing street is provided.

An area light source, a method for manufacturing the same and a display device are provided. The area light source includes: a first conductive structure and a second conductive structure arranged opposite to each other; and a light-emitting layer arranged between the first conductive structure and the second conductive structure and including a plurality of light-emitting chips insulated from each other. A first electrode of each light-emitting chip is electrically connected to the first conductive structure, and a second electrode of each light-emitting chip is electrically connected to the second conductive structure.

A semiconductor device includes a substrate, a resin case, and a wiring member having an exposed portion adjacent to a first fixing portion fixed in a wall surface of the resin case and exposed to outside, and a second fixing portion fixed in the wall surface of the resin case at a position different from the first fixing portion with respect to a portion extending from the first fixing portion into the resin case, in which the wiring member is bonded to a surface of the semiconductor element by solder in the resin case, and has a plate shape having a length, a thickness, and a width, in which the wiring member has the thickness being uniform and is flat in the resin case, and the width of the second fixing portion is narrower than the width of the exposed portion.

An apparatus is provided which comprises: a die comprising an integrated circuit, a first material layer comprising a first metal, the first material layer on a surface of the die, and extending at least between opposite lateral sides of the die, a second material layer comprising a second metal over the first material layer, and a third material layer comprising silver particles and having a porosity greater than that of the second material layer, the third material layer between the first material layer and the second material layer. Other embodiments are also disclosed and claimed.