A semiconductor device includes: a first semiconductor element including a first signal electrode; a second semiconductor element, laminated on the first semiconductor element, including a second signal electrode; a sealing body; a first signal terminal connected to the first signal electrode; and a second signal terminal connected to the second signal electrode, wherein: the first signal terminal and the second signal terminal project from the sealing body and extend in a first direction; the first signal terminal and the second signal terminal are distanced from each other in a second direction; the first signal electrode and the second signal electrode are placed at different positions in the second direction; the first signal electrode is provided closer to the first signal terminal than to the second signal terminal; and the second signal electrode is provided closer to the second signal terminal than to the first signal terminal.

A system configured to increase a reliability of electrical connections in a device. The system including a lead configured to electrically connect a pad of at least one support structure to a pad of at least one electrical component. The lead includes an upper portion that includes a lower surface arranged on a lower surface thereof. The lower surface of the upper portion is arranged vertically above a first upper surface of a first pad connection portion; and the lower surface of the upper portion is arranged vertically above a second upper surface of the second pad connection portion. A process configured to increase a reliability of electrical connections in a device is also disclosed.

A semiconductor wafer includes: a first main surface and a second main surface opposite the first main surface; a detachment plane parallel to the first main surface inside the semiconductor wafer, the detachment plane defined by defects; electronic semiconductor components formed at the first main surface and between the first main surface and the detachment plane; and a glass structure attached to the first main surface. The glass structure includes openings, each of which leaves a respective area of the electronic semiconductor components uncovered. A method of processing the wafer, a clip, and a semiconductor device are also described.

A power module has a substrate having a top side with a first device pad and a second device pad. A first plurality of vertical power devices is coupled to the first device pad via first drain contacts, and a second plurality of vertical power devices is coupled to the second device pad via second drain contacts to form part of a power circuit. A housing encompasses portions of the substrate, the first plurality of vertical power devices, and the second plurality of vertical power devices. A first power terminal extends through a top surface of the housing to the first device pad. A second power terminal extends through the top surface of the housing to the source contacts on a top side of the second plurality of vertical power devices. A third power terminal extends through a top surface of the housing to the second device pad.

An electronic module has a first substrate 11, a first electronic element 13, a second electronic element 23, a second substrate 21, a first terminal part 110 and a second terminal part 120. The first terminal part 110 has a first terminal base end part 111, a first terminal outer part 113, and a first bending part 112 that is provided between the first terminal base end part 111 and the first terminal outer part 113 and that is bent toward the other side on a side of the first terminal base end part 111. The second terminal part 120 has a second terminal base end part 121, a second terminal outer part 123, and a second bending part 122 that is provided between the second terminal base end part 121 and the second terminal outer part 123 and that is bent toward one side on a side of the second terminal base end part 121.

An electronic module has a first substrate 11, a first electronic element 13, a second electronic element 23, a second substrate 21, a first terminal part 110 and a second terminal part 120. The first terminal part 110 has a first terminal base end part 111, a first terminal outer part 113, and a first bending part 112 that is provided between the first terminal base end part 111 and the first terminal outer part 113 and that is bent toward the other side on a side of the first terminal base end part 111. The second terminal part 120 has a second terminal base end part 121, a second terminal outer part 123, and a second bending part 122 that is provided between the second terminal base end part 121 and the second terminal outer part 123 and that is bent toward one side on a side of the second terminal base end part 121.

Provided is a semiconductor module enabling to effectively reduce, with a relatively simple structure, a thermal strain occurring in a bonding section between a semiconductor chip and other conductor members. The semiconductor module is characterized by being provided with: a first wiring layer; a semiconductor element bonded on the first wiring layer via a first bonding layer; a first electrode bonded on the semiconductor element via a second bonding layer; a second electrode connected on the first electrode; and a second wiring layer connected on the second electrode. The semiconductor module is also characterized in that: the width of the second electrode, said width being in the short-side direction, is more than the thickness of the first electrode; and the second electrode is disposed at a position off the center position of the semiconductor element.

A connection terminal unit that can be appropriately connected to terminal connection portions of a semiconductor module including a semiconductor element and that can reduce a projection area when seen in a direction orthogonal to a direction along a chip surface is realized. Connection terminal unit includes plurality of connection terminals facing and connected to plurality of terminal connection portions of semiconductor module, and terminal mold portion holding connection terminals. Terminal mold portion has abutment portion that abuts against semiconductor module or base material holding semiconductor module. Abutment portion has vertical abutment portion that abuts against semiconductor module or base material from vertical direction that is a direction in which connection terminals face terminal connection portions, and side abutment portion that abuts against semiconductor module or base material from at least two directions that are different from each other and intersect with vertical direction.

A semiconductor package includes: a semiconductor die having opposing first and second surfaces, a first contact pad on the first surface, and a second contact pad on the second surface; a die pad and at least one lead spaced apart from the die pad, the first contact pad of the die being mounted on the die pad and the second contact pad being electrically connected to the at least one lead by a connector; a mold compound covering the die, connector, and an upper surface of the die pad and of the at least one lead; and a metallic member inductively coupled to the connector and electrically resistively insulated from the connector. The metallic member includes a web portion arranged above the second surface of the die and at least one peripheral rim portion that extends from the web portion in a direction towards the first surface of the die.

Implementations of semiconductor packages may include: a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include two or more spacers coupled to the first side of the first substrate and a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the two or more spacers.