An array substrate includes a substrate, an active layer, and an amorphous silicon shielding layer. The substrate has a first surface and a second surface, which are opposing to each other. The active layer is over the first surface of the substrate. The amorphous silicon shielding layer includes amorphous silicon, and is between the active layer and the substrate, or alternatively is disposed over a side of the substrate proximal to the second surface of the substrate. An orthographic projection of the amorphous silicon shielding layer on the first surface at least partially and preferably completely covers an orthographic projection of the active layer on the first surface such that the amorphous silicon shielding layer shields a light from shedding onto the active layer.

Provided are a display panel and an electronic apparatus including the display panel. The display panel includes a substrate including a polymer resin; first and second pixel circuits each including a thin-film transistor, a first light-emitting diode connected to the first pixel circuit and located in a first display area; a second light-emitting diode connected to the second pixel circuit and located in a sub-display area of a second display area, a bottom metal layer in the second display area and between the substrate and the second pixel circuit; and a protective layer between the substrate and the bottom metal layer and corresponding to the first and second display areas, wherein the bottom metal layer includes a first opening in a transmissive area, and the protective layer includes a second opening in the transmissive area and overlapping the first opening of the bottom metal layer.

A thin film transistor substrate is provided, which comprises a substrate, a first thin film transistor on the substrate, and a second thin film transistor on the substrate, wherein the first thin film transistor includes a first active layer having a first channel portion, a first gate insulating layer on the first active layer, a first gate electrode on the first gate insulating layer, a first source electrode connected to the first active layer, and a first drain electrode spaced apart from the first source electrode and connected to the first active layer, the second thin film transistor includes a conductive material layer on the substrate, a first buffer layer on the conductive material layer, a second active layer having a second channel portion on the first buffer layer, a second gate insulating layer on the second active layer, a second gate electrode on the second gate insulating layer, a second source electrode connected to the second active layer, and a second drain electrode spaced apart from the second source electrode and connected to the second active layer, and the conductive material layer is connected to the second source electrode and overlaps the second channel portion. Also, a display device comprising the thin film transistor substrate is provided.

An array substrate, a method for manufacturing the same, and a display panel are provided. The array substrate includes a substrate, a first metal layer, a buffer layer, and a semiconductor layer. The first metal layer includes a source electrode, a drain electrode, and a light shielding portion. The semiconductor layer is electrically connected to the source electrode through a first via hole penetrating the buffer layer, and is electrically connected to the drain electrode through a second via hole penetrating the buffer layer. The source electrode, the drain electrode, and the light shielding portion can be formed by a same yellow light process, thereby reducing a number of photomasks and a number of process steps.

An array substrate and a manufacturing method thereof, and a display device are provided. The array substrate includes a substrate; a thin film transistor layer including a gate electrode, a source electrode, and a drain electrode; and a first anti-reflective layer disposed between the substrate and the thin film transistor layer and disposed corresponding to at least one of the gate electrode, the source electrode, or the drain electrode. Wherein, the first anti-reflective layer includes a peeling prevention layer and an anti-reflective functional layer. The anti-reflective functional layer is disposed on a side of the peeling prevention layer away from the substrate.

The object of the present invention is to make it possible to form an LTPS TFT and an oxide semiconductor TFT on the same substrate. A display device includes a substrate having a display region in which pixels are formed. The pixel includes a first TFT using an oxide semiconductor 109. An oxide film 110 as an insulating material is formed on the oxide semiconductor 109. A gate electrode 111 is formed on the oxide film 110. A first electrode 115 is connected to a drain of the first. TFT via a first through hole formed in the oxide film 110. A second electrode 116 is connected to a source of the first TFT via a second through hole formed in the oxide film 110.

A manufacturing method of a low temperature poly-silicon (LTPS) array substrate is described. The LTPS array substrate includes a metal light-shielding layer, a buffer layer, a polycrystalline silicon layer, a gate insulating and interlayer insulating layer, a gate line layer, and a source and drain electrode layer. The method adopts a one-time chemical vapor deposition process to form a gate insulator and interlayer insulating layer. A gate line trench is formed in the gate insulating layer and the interlayer insulating layer, thereby reducing the thickness of the LTPS array substrate film layer and the process steps.

Disclosed is a display apparatus and a method for manufacturing the same, wherein the display apparatus comprises a substrate, a light shielding layer, a signal line and a first electrode on the substrate, an active layer, a gate electrode, a second electrode, a first connection electrode for connecting the active layer with the signal line, and a second connection electrode for connecting the active layer with any one of the first electrode and the second electrode, wherein any one of the first electrode and the second electrode is a pixel electrode of a display device, and the other is a common electrode of the display device, the light shielding layer, the signal line and the first electrode are disposed on the same layer, and the first connection electrode and the second connection electrode are formed of the same material as that of the second electrode.

A display device includes a first pixel circuit including a light-receiving element and a first transistor, and a second pixel circuit including a light-emitting element and a second transistor. The light-receiving element includes an active layer between a first pixel electrode and a common electrode, and the light-emitting element includes a light-emitting layer between a second pixel electrode and the common electrode. The first pixel electrode and the second pixel electrode are positioned on the same plane. The active layer and the light-emitting layer contain different organic compounds. A source or a drain of the first transistor is electrically connected to the first pixel electrode, and a source or a drain of the second transistor is electrically connected to the second pixel electrode. The first transistor includes a first semiconductor layer containing a metal oxide, and the second transistor includes a second semiconductor layer containing polycrystalline silicon.

The present application provides a display panel and a manufacturing method thereof, wherein a projection of a light-absorbing layer in the display panel on a base substrate covers a projection of a gap between a first electrode and a second electrode on the base substrate, so as to absorb ambient light directly or indirectly irradiated on a channel region through the gap between a first electrode and a second electrode, so that the channel region on a first metal layer is well protected, which greatly reduces the problem of performance degradation of the channel region of an active layer caused by irradiation of the external ambient light.