A method of manufacturing a thin-film transistor substrate which includes a thin-film transistor includes: forming a planarization layer comprising polyimide material above the thin-film transistor; and heating the thin-film transistor at a temperature of 240° C. or lower after the planarization layer is formed.

Provided is a method for forming an organic planarization layer. The method includes forming lithographically-patterned arrays atop a substrate; disposing a thiol-based photocurable resin on to the lithographically-patterned arrays to form a photocurable planarization layer; and curing the photocurable planarization layer to form a flat surface above the lithographically-patterned array.

The present invention includes a thin-film transistor, a flattened film having a flattened top surface and having a contact hole formed thereon, and a pixel electrode and a common line which are disposed on the top surface of the flattened film. The common line includes a common metal line, and the pixel electrode has a connection portion formed in the contact hole and electrically connected to the thin-film transistor. The connection portion of the pixel electrode includes a connection metal film made of the material same as the material for the common metal line of the common line.

The present disclosure provides a TFT, its manufacturing method, an array substrate and a display device. The method includes steps of: forming a pattern of a gate electrode on a base substrate; forming a gate insulation layer with an even surface; forming a pattern of a polysilicon semiconductor layer; and forming patterns of a source electrode and a drain electrode. The step of forming the pattern of the polysilicon semiconductor layer includes: crystallizing the amorphous silicon layer, so as to form the polysilicon semiconductor layer.

A photoelectric conversion panel includes: a thin film transistor; a first organic film formed in an upper layer with respect to the thin film transistor; a photoelectric conversion element formed in an upper layer with respect to the first organic film; a first inorganic layer formed so as to cover at least a part of the photoelectric conversion element, and to cover the first organic film; and a second organic film formed in an upper layer with respect to the first organic film, wherein the first inorganic layer is provided with a first through hole connecting the first organic film and the second organic film.

A display device, includes: a first gate electrode; a lower insulating film; a lower gate insulating film including a metal oxide film; and an oxide semiconductor layer, all of which are provided on a substrate in a stated order; and a first transistor provided on the substrate and including the oxide semiconductor layer, the first transistor including one or more first transistors, the first transistor including: a first channel region; a first conductor region holding the first channel region; and the first gate electrode across the lower gate insulating film from the first channel region, and between the lower insulating film and the first gate electrode, a clearance being provided, and the clearance being filled with the lower gate insulating film.

A TFT substrate includes a dielectric substrate and a plurality of antenna unit regions arranged on the dielectric substrate, each of the antenna unit regions including a TFT and a patch electrode electrically connected to a drain electrode of the TFT. The TFT substrate includes a gate metal layer supported by the dielectric substrate and including a gate electrode of the TFT, a source metal layer supported by the dielectric substrate and including a source electrode of the TFT, a semiconductor layer, supported by the dielectric substrate, of the TFT, a gate insulating layer formed between the gate metal layer and the semiconductor layer, and a flattened layer formed over the gate insulating layer and formed from an organic insulating material.

A transistor may be provided by forming, in a forward order or in a reverse order, a gate electrode, a metal oxide liner, a gate dielectric, and an active layer over a substrate, and by forming a source electrode and a drain electrode on end portions of the active layer. The metal oxide liner comprises a thin semiconducting metal oxide material that functions as a hydrogen barrier material.

A semiconductor device includes a conductive resin layer that includes an insulating resin and first fillers dispersed in the insulating resin and has first and second main surfaces, and an element layer that is arranged on the first main surface and includes a semiconductor element. The first fillers are each a fibrous conductive filler. The conductive resin layer has a first surface layer section that includes the first main surface and has a thickness which is 30% of a thickness of the conductive resin layer, a second surface layer section that includes the second main surface and has a thickness which is 30% of the thickness of the conductive resin layer, and an intermediate layer section arranged between the first and second surface layer sections. First fillers have a smaller directional angle relative to the first main surface in the first surface layer section than in the intermediate layer section.

A thin film transistor includes an active layer including a first portion having a first thickness and a second portion having a second thickness greater than the first thickness, a capping layer filling a thickness difference between the first portion and the second portion and arranged on the first portion, a gate insulating layer arranged on the capping layer, a gate electrode on the active layer, wherein the gate insulating layer and the capping layer are disposed between the gate electrode and the active layer, and a source electrode and a drain electrode connected to the active layer.