A display device, includes: a first gate electrode; a lower insulating film; a lower gate insulating film including a metal oxide film; and an oxide semiconductor layer, all of which are provided on a substrate in a stated order; and a first transistor provided on the substrate and including the oxide semiconductor layer, the first transistor including one or more first transistors, the first transistor including: a first channel region; a first conductor region holding the first channel region; and the first gate electrode across the lower gate insulating film from the first channel region, and between the lower insulating film and the first gate electrode, a clearance being provided, and the clearance being filled with the lower gate insulating film.

An array substrate includes a display region including at least two partitions. The array substrate includes a gate driving circuit, first gate electrodes and second gate electrodes. The gate driving circuit is configured to, while inputting a first voltage to the respective first gate electrodes for turning on corresponding thin film transistors according to normal timing, selectively input, to all the second gate electrodes in at least one of the partitions, a second voltage for turning off or turning on all thin film transistors in the partition.

Disclosed are an array substrate and a method for manufacturing the same. The array substrate includes a transmission gate structure having an upper thin film transistor and a lower thin film transistor. An active layer of the lower TFT is the first active layer, and an active layer of the upper TFT is the second active layer. The first active layer and the second active layer are provided on two sides of a source and drain layer, respectively, and share source and drain electrodes. Compared with the prior art, such structure is simpler, and furthermore it facilitates simplification of a manufacturing process of the transmission gate structure and improves a success rate of preparation thereof.

The electroluminescence device of the disclosure includes: a base material provided with a recessed portion; a light-emitting element including a reflective layer provided on the front surface of the recessed portion, a filling layer having optical transparency and filling an inside of the recessed portion with the reflective layer interposed therebetween, a first electrode having optical transparency provided on the filling layer, an organic layer including a light-emitting layer provided on the first electrode, and a second electrode having optical transparency provided on the organic layer, and an active element connected to the light-emitting element, wherein a display region includes a plurality of unit regions divided from one another, the unit regions include a plurality of the light-emitting elements and the active elements configured to control the light emission of the plurality of light-emitting elements, and the reflective layer of at least one of the light-emitting elements of the plurality of recessed portions functions as a contact portion with the active element.

The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming a deficiency and an upper layer for minimizing external affection, on the multilayered source and drain electrodes.

Embodiments of the inventive concepts provide a method of fabricating a flexible substrate and the flexible substrate fabricated thereby. The method includes printing a gate catalyst pattern on a separation layer, forming a gate plating pattern on the gate catalyst pattern, forming a gate insulating layer on the gate plating pattern, printing a source catalyst pattern and a drain catalyst pattern spaced apart from each other on the gate insulating layer, and forming a source plating pattern and a drain plating pattern on the source catalyst pattern and the drain catalyst pattern, respectively.

A display device is provided. The display device includes a base; a gate conductor disposed directly on the base and including a gate line and a gate electrode; a gate insulating layer disposed on the gate conductor and including an overlap portion, which overlaps with the gate conductor, and a non-overlap portion, which is connected to the overlap portion, does not overlap with the gate conductor, and is spaced apart from the base; and a semiconductor pattern disposed on the gate insulating layer and overlapping with the gate electrode, wherein edges of the gate insulating layer project further than edges of the gate conductor and edges of the semiconductor pattern.

A pixel structure is disposed on a substrate and includes a bump, a first insulating layer, a semiconductive layer, a second insulating layer, a metal layer, and a pixel electrode. The bump is disposed on the substrate. The first insulating layer is disposed on the substrate and covers the bump. The first insulating layer has a protruding portion at the position at which the first insulating layer covers the bump. The semiconductive layer is disposed on the first insulating layer, and at least a portion of the semiconductive layer is disposed above the protruding portion. The second insulating layer is disposed on the first insulating layer and covers the semiconductive layer. The second insulating layer has a via, so as to make a portion of the semiconductive layer be not covered by the second insulating layer. The via corresponds to the protruding portion in a direction perpendicular to the substrate. The metal layer is electrically connected to the semiconductive layer through the via.

The disclosed subject matter provides a thin film transistor and a fabricating method thereof. The thin film transistor includes a substrate, a source electrode and a drain electrode on the substrate, an active layer on the source and drain electrodes, a gate insulating layer on the active layer, and a gate electrode on the gate insulating layer. The active layer extends from the source electrode towards the drain electrode along a non-linear path.

It is an object of the present invention to provide a method for manufacturing a display device in which unevenness generated under a light-emitting element does not impart an adverse effect on the light-emitting element. It is another object of the invention to provide a method for manufacturing a display device in which penetration of water into the inside of the display device through a film having high moisture permeability can be suppressed without increasing processing steps considerably. A display device of the present invention comprises a thin film transistor and a light-emitting element, the light-emitting element including a light-emitting laminated body interposed between a first electrode and a second electrode; wherein the first electrode is formed over an insulating film formed over the thin film transistor; and wherein a planarizing film is formed in response to the first electrode between the first electrode and the insulating film.