A display device includes a plurality of sub-pixels defined by a plurality of gate lines and a plurality of data lines, a pixel electrode disposed in each of the sub-pixels in a first direction, a common electrode disposed in each of the sub-pixels in the first direction, and a sensing line disposed in each of the sub-pixels in the first direction, wherein the common electrode includes a first common electrode disposed at an outermost side in a second direction, the second direction is a direction perpendicular to the first direction, and the sensing line is disposed between the first common electrodes.

A display apparatus includes a substrate including a display area and a peripheral area outside the display area, a pixel circuit disposed on the substrate in the display area, where the pixel circuit includes a driving thin film transistor and a switching thin film transistor, and a display element connected to the pixel circuit. The driving thin film transistor includes a driving semiconductor layer having a single layer structure, the switching thin film transistor includes a switching semiconductor layer in which a first layer, a second layer, and a third layer, which are oxide semiconductors, are sequentially stacked one on another, and a conductivity of the second layer of the switching semiconductor layer is greater than respective conductivities of the first layer and the third layer of the switching semiconductor layer.

The operation speed of a semiconductor device is improved. The semiconductor device includes a first memory region and a second memory region; in the semiconductor device, a first memory cell in the first memory region is superior to a second memory cell in the second memory region in data retention characteristics such as a large storage capacitance or a large channel length-channel width ratio (L/W) of a transistor. When the semiconductor device is used as a cache memory or a main memory device of a processor, the first memory region mainly stores a start-up routine and is not used as a work region for arithmetic operation, and the second memory region is used as a work region for arithmetic operation. The first memory region becomes an accessible region when the processor is booted, and the first memory region becomes an inaccessible region when the processor is in normal operation.

A semiconductor device with high reliability is provided. The semiconductor device includes a first insulator, a second insulator, and a transistor; the transistor includes an oxide in a channel formation region; the oxide is surrounded by the first insulator; and the first insulator is surrounded by the second insulator. The first insulator includes a region with a lower hydrogen concentration than the second insulator. Alternatively, the first insulator includes a region with a lower hydrogen concentration than the second insulator and with a lower nitrogen concentration than the second insulator.

A semiconductor device in which variations in characteristics, deterioration of elements, and abnormality in shape are inhibited is provided. The semiconductor device includes a first region including a plurality of elements and a second region including a plurality of dummy elements. The second region is provided in an outer edge of the first region, and the element and the dummy element each include an oxide semiconductor. The element and the dummy element have the same structure, and a structure body included in the element and a structure body included in the dummy element are formed with the same material and provided in the same layer. The oxide semiconductor includes In, an element M (M is Al, Ga, Y, or Sn), and Zn.

A semiconductor device with a small variation in characteristics is provided. The semiconductor device includes an oxide, a first conductor and a second conductor over the oxide, a first insulator over the first conductor, a second insulator over the second conductor, a third conductor over the first insulator, a fourth insulator over the second insulator, a fifth insulator over the third insulator and the fourth insulator, a sixth insulator over the fifth insulator, a seventh insulator that is over the oxide and placed between the first conductor and the second conductor, an eighth insulator over the seventh insulator, a third conductor over the eighth insulator, and a ninth insulator over the third conductor and the sixth to eighth insulators. The third conductor includes a region overlapping the oxide. The seventh insulator includes a region in contact with each of the oxide, the first conductor, the second conductor, and the first to sixth insulators. The first insulator, the second insulator, the fifth insulator, and the ninth insulator are each a metal oxide having an amorphous structure.

A semiconductor device with a small circuit scale is provided. The semiconductor device includes a first circuit and a second circuit. The first circuit includes first to n-th (n is an integer of 2 or more) transistors and the second circuit includes (n+1)-th to 2n-th transistors. The first to n-th transistors are connected in parallel to each other and the (n+1)-th to 2n-th transistors are connected in series to each other. First to n-th signals are supplied to the first circuit and the second circuit. The first circuit has a function of outputting a first potential when each of potentials of the first to n-th signals is lower than or equal to a first reference potential, and outputting a second potential when at least one of the potentials of the first to n-th signals is higher than the first reference potential. The second circuit has a function of outputting a third potential when each of the potentials of the first to n-th signals is higher than a second reference potential, and outputting the first potential when at least one of the potentials of the first to n-th signals is lower than or equal to the second reference potential.

A semiconductor device including an inorganic light-emitting element is provided. The semiconductor device includes the inorganic light-emitting element, a transistor, and a capacitor. The inorganic light-emitting element includes a first film and a second film. The first film contains indium, oxygen, and nitrogen, and the second film contains gallium and nitrogen. The first film has a wurtzite structure or a cubic crystal structure, and the second film has a wurtzite structure and grows on the first film. The first film functions as a cathode electrode of the inorganic light-emitting element. One electrode of the capacitor is formed above the second film included in the inorganic light-emitting element, and the transistor including a metal oxide in a semiconductor layer is formed above the other electrode of the capacitor. The one electrode of the capacitor has a function of reflecting light emitted from the inorganic light-emitting element. The inorganic light-emitting element emits light through the first film.

A display apparatus with high display quality is provided. A high-resolution display apparatus is provided. The display apparatus includes a plurality of pixels, and the pixels each include a light-emitting device, a first transistor, a second transistor, a third transistor, a fourth transistor, and a first capacitor. One electrode of the light-emitting device is electrically connected to one of a source and a drain of the first transistor, one of a source and a drain of the second transistor, and one electrode of the first capacitor. A gate of the second transistor is electrically connected to the other electrode of the first capacitor, one of a source and a drain of the third transistor, and one of a source and a drain of the fourth transistor. One frame period of each of the pixels includes a period in which the first transistor and the fourth transistor are each in a conduction state.

In a transistor including an oxide semiconductor, a change in electrical characteristics is suppressed and reliability is improved. The transistor includes an oxide semiconductor film over a first insulating film; a second insulating film over the oxide semiconductor film; a metal oxide film over the second insulating film; a gate electrode over the metal oxide film; and a third insulating film over the oxide semiconductor film and the gate electrode. The oxide semiconductor film includes a channel region overlapping with the gate electrode, a source region in contact with the third insulating film, and a drain region in contact with the third insulating film. The source region and the drain region contain one or more of hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur, chlorine, titanium, and a rare gas.