A novel composite oxide semiconductor which can be used in a transistor including an oxide semiconductor film is provided. In the composite oxide semiconductor, a first region and a second region are mixed. The first region includes a plurality of first clusters containing In and oxygen as main components. The second region includes a plurality of second clusters containing Zn and oxygen as main components. The plurality of first clusters have portions connected to each other. The plurality of second clusters have portions connected to each other.

In a semiconductor device according to an embodiment, a thickness of a semiconductor layer of an SOI substrate on which a field effect transistor constituting an analog circuit is formed is set to 2 nm or more and 24 nm or less.

A highly reliable semiconductor device is provided. The semiconductor device includes first to third transistors and a capacitor. In the first transistor, one of a source and a drain is supplied with a first signal, the other of the source and the drain is connected to a gate of the second transistor and one electrode of the capacitor, and a gate is supplied with a second pulse signal. In the second transistor, one of a source and a drain is supplied with a first pulse signal, and the other of the source and the drain is connected to the other electrode of the capacitor and one of a source and a drain of the third transistor. In the third transistor, the other of the source and the drain is supplied with the first potential, and a gate is supplied with a second signal that is an inverted signal of the first signal. The first pulse signal is a clock signal, and the second pulse signal has a duty ratio of 55% or lower.

The present disclosure provides a thin film transistor, a display substrate and a display device, and belongs to the field of display technology. The thin film transistor of the present disclosure includes: a base, and a gate, an active layer, a source and a drain located on the base, where the gate includes a first gate and a second gate which are sequentially provided on the base and are electrically connected to each other; the active layer is located between the first gate and the second gate, and orthographic projections of the first gate and the second gate on the base are partially overlapped with an orthographic projection of the active layer on the base, and the orthographic projections of the first gate and the second gate on the base are partially overlapped with each other.

Each first thin film transistor of a semiconductor device includes: a lower electrode; a first oxide semiconductor layer including a channel region and first and second contact regions; a gate electrode disposed on the channel region with a gate insulating layer interposed therebetween; and a source electrode and a drain electrode connected to the first contact region and the second contact region, respectively. When viewed from a normal direction of the substrate, at least a part of the channel region overlaps the lower electrode, and at least one of the first and second contact regions is located outside the lower electrode. The channel region has a layered structure including a lower layer, an upper layer located between the lower layer and the gate insulating layer, and a high mobility layer disposed between the lower layer and the upper layer and having mobility higher than mobility of the lower layer and the upper layer. In the channel region, the thickness of the upper layer is equal to or less than 1/3 of the thickness of the lower layer, and the thickness of the high mobility layer is equal to or less than 1/2 of the thickness of the lower layer.

A semiconductor device is provided. The semiconductor device includes: an active pattern provided on a substrate having an upper surface; an insulation pattern provided above the substrate and contacting an upper surface of the active pattern; channels spaced apart from each other along a direction perpendicular to the upper surface of the substrate, each of the channels including a material provided in the active pattern; and a gate structure contacting an upper surface of the insulation pattern, an upper surface of the channels, a lower surface of the channels, and sidewalls of the channels opposite to each other. A first distance between an upper surface of the active pattern and a lowermost one of the channels is greater than a second distance between an upper surface of one of the channels and a lower surface of an adjacent channel.

A novel storage device is provided. The storage device includes a first wiring, a second wiring, and a first memory cell. The first memory cell includes a first transistor and a first magnetic tunnel junction device. One of a source or a drain of the first transistor is electrically connected to a first wiring. The other of the source or the drain of the first transistor is electrically connected to one terminal of the first magnetic tunnel junction device. Another terminal of the first magnetic tunnel junction device is electrically connected to the second wiring. The first transistor includes an oxide semiconductor in its channel formation region.

To provide a semiconductor device with less variations in characteristics. The semiconductor device includes a first circuit region and a second circuit region over a substrate, where the first circuit region includes a plurality of first transistors and a first insulator over the plurality of first transistors; the second circuit region includes a plurality of second transistors and a second insulator over the plurality of second transistors; the second insulator includes an opening portion; the first transistors and the second transistors each include an oxide semiconductor; a third insulator is positioned over and in contact with the first insulator and the second insulator; the first insulator, the second insulator, and the third insulator inhibit oxygen diffusion; and the density of the plurality of first transistors arranged in the first circuit region is higher than the density of the plurality of second transistors arranged in the second circuit region.

A semiconductor device with a high on-state current is provided. The semiconductor device includes a first oxide, a second oxide over the first oxide, a third oxide over the second oxide, a first insulator over the third oxide, a conductor over the first insulator, a second insulator in contact with the second oxide and the third oxide, and a third insulator over the second insulator; the second oxide includes first region to fifth regions; the resistance of the first region and the resistance of the second region are lower than the resistance of the third region; the resistance of the fourth region and the resistance of the fifth region are lower than the resistance of the third region and higher than the resistance of the first region and the resistance of the second region; and the conductor is provided over the third region, the fourth region, and the fifth region to overlap with the third region, the fourth region, and the fifth region.

Embodiments of the present disclosure are related to a thin film transistor and a display device, as disposing a capacitor electrode on a gate electrode of the thin film transistor including double gate electrodes, an area where a storage capacitor occupies in a subpixel is reduced and a space availability can be improved. Furthermore, among the double gate electrodes, a gate electrode forming a storage capacitor doesn't overlap a part of a channel, and a part of the capacitor electrode overlaps a part of the channel, so it can be possible to control electric field by the capacitor electrode, thus the thin film transistor having a high output current and a current stability can be provided