A semiconductor device includes: a substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the substrate; a sensor disposed adjacent to the second surface of the substrate; an electrical contact disposed on the first surface of the substrate; and a package body exposing a portion of the electrical contact.

A semiconductor package structure includes a semiconductor die surface having a narrower pitch region and a wider pitch region adjacent to the narrower pitch region, a plurality of first type conductive pillars in the narrower pith region, each of the first type conductive pillars having a copper-copper interface, and a plurality of second type conductive pillars in the wider pitch region, each of the second type conductive pillars having a copper-solder interface. A method for manufacturing the semiconductor package structure described herein is also disclosed.

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.

Provided is a method of manufacturing compliant bumps, the method including preparing an electronic device including at least one conductive pad, forming an elastic resin layer on the electronic device, forming a photoresist layer on the elastic resin layer, forming a first photoresist pattern on a region spaced apart from a region where the conductive pad is located, forming a second photoresist pattern having a lower cross-sectional area greater than an upper cross-sectional area, forming an elastic resin pattern having a lower cross-sectional area greater than an upper cross-sectional area, on a region spaced apart from a region where the conductive pad is located, and forming a conductive wiring pattern covering at least a part of the elastic resin pattern and extending to the conductive pad.

Provided is a method of manufacturing a bump structure, the method including a first step for preparing a wafer including a plurality of chips each including a die pad, an under bump metal (UBM) layer on the die pad, and a bump pattern on the UBM layer, a second step for attaching a backgrinding film to an upper surface of the wafer, a third step for grinding a rear surface of the wafer by a certain thickness, a fourth step for forming a flexible material layer on a second rear surface of the wafer after being ground, and then attaching dicing tape including a ring frame, to the flexible material layer, a fifth step for removing the backgrinding film and then performing a curing process to harden the flexible material layer, and a sixth step for performing a dicing process to cut the plurality of chips into individual chips.

Provided is a method of manufacturing compliant bumps, the method including preparing an electronic device including at least one conductive pad, forming an elastic resin layer on the electronic device, forming a photoresist layer on the elastic resin layer, forming a first photoresist pattern on a region spaced apart from a region where the conductive pad is located, forming a second photoresist pattern having a lower cross-sectional area greater than an upper cross-sectional area, forming an elastic resin pattern having a lower cross-sectional area greater than an upper cross-sectional area, on a region spaced apart from a region where the conductive pad is located, and forming a conductive wiring pattern covering at least a part of the elastic resin pattern and extending to the conductive pad.

A fan-out wafer level package is disclosed, which includes: a redistribution layer; a semiconductor chip electrically connected with the redistribution layer through a bump; a protective member protecting the semiconductor chip, wherein a part of the protective member is removed such that the upper surface of the semiconductor chip is exposed in order to dissipate heat and prevent warpage; and an interconnector disposed outside the semiconductor chip at substantially the same level and having a lower part electrically connected with the redistribution layer and an upper part not being covered with the protective member, wherein the interconnector includes a metal core solder ball, the metal core solder ball includes a metal core and a solder buffer between the metal core and the protective member, and the metal core is formed of a combination of copper (Cu), nickel (Ni), and silver (Ag).

A semiconductor device includes: a substrate having a first surface and a second surface opposite to the first surface; an electronic component disposed on the first surface of the substrate; a sensor disposed adjacent to the second surface of the substrate; an electrical contact disposed on the first surface of the substrate; and a package body exposing a portion of the electrical contact.

A resin-encapsulated semiconductor device includes a bump electrode formed on an element surface side of a semiconductor chip, a conductive layer electrically connected to the bump electrode, and a resin encapsulation body covering the semiconductor chip, the bump electrode, and the conductive layer. On a back surface of the semiconductor chip that is flush with a back surface of the resin encapsulation body, a metal layer and a laminated film are formed. The laminated film is formed on a front surface of the conductive layer, and an external terminal is arranged on an inner side of an outer edge of the semiconductor chip.

A method includes aligning a first electrical connector of a first package component to a second electrical connector of a second package component. With the first electrical connector aligned to the second electrical connector, a metal layer is plated on the first and the second electrical connectors. The metal layer bonds the first electrical connector to the second electrical connector.