In a manufacturing method of a semiconductor device including a substrate having a front surface and a rear surface, and a film attached to the rear surface, the film is attached on the rear surface, a rear surface side groove is provided by half-cutting the substrate from the rear surface together with the film, a protective member is attached to the film after the rear surface side groove is provided, and a front surface side groove connected to the rear surface side groove is provided by dicing the substrate from the front surface after the protective member is attached.

A package includes a circuit that includes at least one active area and at least one secondary device area, a support configured to support the circuit, and a die attach material. The circuit being mounted on the support using the die attach material and the die attach material including at least one channel configured to allow gases generated during curing of the die attach material to be released from the die attach material.

A packaged radio frequency (RF) module is disclosed. The module can include a substrate, a first die electrically and mechanically attached to the substrate, a second die electrically and mechanically attached to the substrate, an encapsulating material, and a lid attached to the substrate. The first die comprises a silicon-based die, such as an RF switch die, and the second die comprises a compound semiconductor die, such as an RF amplifier. The encapsulating material can protect electrical connections between the first die and the substrate. The substrate and the lid at least partially define an air cavity within which the first and the second die are mounted. An active surface of the second die is exposed to the air cavity.

A metal mask is disposed on a copper base plate. A solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste on each of copper plates of the copper base plate. A semiconductor element and a conductive component are placed on the respective patterns of the solder pastes. A metal mask is disposed on the copper base plate. Then, a solder paste is introduced into each of a plurality of openings in the metal mask, to thereby form a pattern of the solder paste covering each of the semiconductor element and the conductive component. A large-capacity relay board is disposed so as to come into contact with a corresponding pattern of the solder paste. A power semiconductor device is completed by performing heat treatment under a temperature condition of 200 C. or higher.

Some embodiments relate to an electronic package. The electronic package includes a first die and a second die stacked onto the first die. A first encapsulant is positioned between the first die and the second die. The first encapsulant includes a first material that covers a first volume between the first die and the second die. A second encapsulant is positioned between the first die and the second die. The second encapsulant includes a second material that covers a second volume between the first die and the second die. The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material.

Some embodiments relate to an electronic package. The electronic package includes a first die and a second die stacked onto the first die. A first encapsulant is positioned between the first die and the second die. The first encapsulant includes a first material that covers a first volume between the first die and the second die. A second encapsulant is positioned between the first die and the second die. The second encapsulant includes a second material that covers a second volume between the first die and the second die. The first material has a higher thermal conductivity than the second material, and the second material more effectively promotes electrical connections between the first die and the second die as compared to the first material.

A packaged radio frequency (RF) module is disclosed. The module can include a substrate, a first die electrically and mechanically attached to the substrate, a second die electrically and mechanically attached to the substrate, an encapsulating material, and a lid attached to the substrate. The first die comprises a silicon-based die, such as an RF switch die, and the second die comprises a compound semiconductor die, such as an RF amplifier. The encapsulating material can protect electrical connections between the first die and the substrate. The substrate and the lid at least partially define an air cavity within which the first and the second die are mounted. An active surface of the second die is exposed to the air cavity.

The present disclosure generally relates to an electronic assembly. The electronic assembly may include a substrate including a plurality of first contact pads, a plurality of second contact pads, and a plurality of third contact pads. The electronic assembly may include a first device including a first footprint coupled to the substrate at a first surface. The electronic assembly may include a frame arranged between the first device and the substrate, the frame including a dielectric material, the frame further including a main frame extending around the first device, and further including a plurality of sub-frames encircling the plurality of first contact pads and the plurality of second contact pads on the substrate, wherein the frame may further include a conductive layer extending at least partially across the main frame.

A semiconductor device includes a first die; a second die attached over the first die; a first metal enclosure and a second metal enclosure both directly contacting and vertically extending between the first die and the second die, wherein the first metal enclosure peripherally encircles a set of one or more internal interconnects and the second metal enclosure peripherally encircles the first metal enclosure without directly contacting the first metal enclosure; a first enclosure connector electrically connecting the first metal enclosure to a first voltage level; a second enclosure connector electrically connecting the second metal enclosure to a second voltage level; and wherein the first metal enclosure, the second metal enclosure, the first enclosure connector, and the second enclosure connector are configured to provide an enclosure capacitance.

A package structure and a formation method of a package structure are provided. The method includes disposing a chip structure over a substrate and forming a first adhesive element directly on the chip structure. The first adhesive element has a first thermal conductivity. The method also includes forming a second adhesive element directly on the chip structure. The second adhesive element has a second thermal conductivity, and the second thermal conductivity is greater than the first thermal conductivity. The method further includes attaching a protective lid to the chip structure through the first adhesive element and the second adhesive element.