A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 m from each other to enable contact or direct-bonding between pads and vias with diameters under 5 m at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 m in height for direct bonding.

An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

A surface acoustic wave (SAW) filter package structure includes a dielectric substrate having a dielectric layer, a first patterned conductive layer, a second patterned conductive layer, and a conductive connection layer. The conductive connection layer is electrically connected between the first patterned conductive layer and the second patterned conductive layer, which are disposed at opposite sides of the dielectric layer. The second patterned conductive layer has a finger electrode portion. An active surface of a chip is faced toward the finger electrode portion. A polymer sealing frame is disposed between the chip and the dielectric substrate and surrounds the periphery of the chip to form a chamber together with the chip and the dielectric substrate. The mold sealing layer is disposed on the dielectric substrate and covers the chip and the polymer sealing frame. A manufacturing method of the SAW filter package structure is also disclosed.

A packaging structure having an organic interposer layer and a method for manufacturing the same are provided; the method comprises: forming a rewiring layer having metal wiring layers and inorganic dielectric layers over a semiconductor substrate; forming conductive pillars over the rewiring layer, and electrically connected to the rewiring layer; forming an organic dielectric layer over the rewiring layer, forming solder bumps over a thinned organic dielectric layer and thinned conductive pillars; bonding a support substrate to the solder bumps through an adhesive layer; removing the semiconductor substrate; forming bonding pads on an exposed surface of the metal wiring layers; connecting a cutting carrier to the bonding pads, and disengaging the support substrate by removing the adhesive layer. Interconnection between upper and lower layers is achieved by introducing the conductive pillars in the organic dielectric layer, without the need for complex processes such as forming through-silicon vias.

An apparatus comprising: a die stack comprising at least one die pair, the at least one die pair having a first die over a second die, the first die and the second die both having a first surface and a second surface, the second surface of the first die over the first surface of the second die; and an adhesive film between the first die and the second die of the at least one die pair; wherein the adhesive film comprises an insulating layer and a conductive layer, the insulating layer adhering to the second surface of the first die and the conductive layer adhering to the first surface of the second die.

A method includes forming a conductive pad over an interconnect structure of a wafer, forming a capping layer over the conductive pad, forming a dielectric layer covering the capping layer, and etching the dielectric layer to form an opening in the dielectric layer. The capping layer is exposed to the opening. A wet-cleaning process is then performed on the wafer. During the wet-cleaning process, a top surface of the capping layer is exposed to a chemical solution used for performing the wet-cleaning process. The method further includes depositing a conductive diffusion barrier extending into the opening, and depositing a conductive material over the conductive diffusion barrier.

A method for fabricating a diode layer stack comprises providing a diode layer stack including a silicon carbide diode die including a first main surface at an anode side of the diode die and a second main surface opposite to the first main surface at a cathode side of the diode die, a layer stack on the first main surface of the diode die, the layer stack including a copper layer disposed on the first main surface of the diode die, and a tin or indium containing layer disposed above the copper layer; providing a die pad comprising a copper leadframe including a first main surface and a second main surface opposite to the first main surface; and performing a diffusion soldering process for connecting the diode layer stack with the layer stack to the first main surface of the die pad.

An adhesive with self-connecting interconnects is provided. The adhesive layer provides automatic 3D joining of microelectronic components with a conductively self-adjusting anisotropic matrix. In an implementation, the adhesive matrix automatically makes electrical connections between two surfaces that have opposing electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

An element electrode is located on a surface of a semiconductor element. A metal film is located on the element electrode and includes an inner region and an outer region located around the inner region. The metal film has an opening that exposes the element electrode between the inner region and the outer region. The element electrode has solder wettability lower than solder wettability of the metal film. An external electrode is solder-bonded to the inner region of the metal film.

Disclosed is a method of coating a conductive substrate with an adhesive, wherein the amounts and positions of conductive and non-conductive adhesives for bonding a plurality of circuit elements to the conductive substrate are set, thus preventing the spread of the adhesive from causing defects, including a poor aesthetic appearance, low electrical conductivity, and short circuits.