Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15 C. and less than or equal to about 110 C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The semiconductor structure includes: a first die including: a fuse structure including a pair of conductive segments, wherein the pair of conductive segments are separated by a void and one of the pair of conductive segments is electrically connected to a bonding pad of the first die; and a second die over and bonded to the first die, the second die including an inductor electrically connected to the one of the pair of conductive segments.

A package structure and method of manufacturing a package structure are provided. The package structure includes two semiconductor structures and two bonding layers sandwiched between both semiconductor structures. Each bonding layer has a plurality of bonding pads separated by an isolation layer. Each bonding pad has a bonding surface including a bonding region and at least one buffer region. The bonding regions in both bonding layers bond to each other. The buffer region of one semiconductor structure bonds to the isolation layer of the other semiconductor structure. Each first bonding pad has a front cross-section with a length greater than a length of a front cross-section of each second bonding pads; and each second bonding pads has a side cross-section with a length greater than a length of a front cross-section of each first bonding pad.

A method for bonding of a first, at least partially metallic contact surface of a first substrate to a second, at least partially metallic contact surface of a second substrate, with the following steps, especially the following progression: application of a sacrificial layer which is at least partially, especially predominantly soluble in the material of at least one of the contact surfaces to at least one of the contact surfaces, bonding of the contact surfaces with at least partial solution of the sacrificial layer in at least one of the contact surfaces.

3D joining of microelectronic components and a conductively self-adjusting anisotropic matrix are provided. In an implementation, an adhesive matrix automatically makes electrical connections between two surfaces that have electrical contacts, and bonds the two surfaces together. Conductive members in the adhesive matrix are aligned to automatically establish electrical connections between at least partially aligned contacts on each of the two surfaces while providing nonconductive adhesion between parts of the two surfaces lacking aligned contacts. An example method includes forming an adhesive matrix between two surfaces to be joined, including conductive members anisotropically aligned in an adhesive medium, then pressing the two surfaces together to automatically connect corresponding electrical contacts that are at least partially aligned on the two surfaces. The adhesive medium in the matrix secures the two surfaces together.

Provided are anisotropic conductive materials, electronic devices including anisotropic conductive materials, and/or methods of manufacturing the electronic devices. An anisotropic conductive material may include a plurality of particles in a matrix material layer. At least some of the particles may include a core portion and a shell portion covering the core portion. The core portion may include a conductive material that is in a liquid state at a temperature greater than 15 C. and less than or equal to about 110 C. or less. For example, the core portion may include at least one of a liquid metal, a low melting point solder, and a nanofiller. The shell portion may include an insulating material. A bonding portion formed by using the anisotropic conductive material may include the core portion outflowed from the particle and may further include an intermetallic compound.

Anisotropic conductive connections for interconnect bridges and related methods are disclosed herein. An example a package substrate for an integrated circuit package, the package substrate comprising a first pad disposed at a first end of an interconnect within the package substrate, the first pad disposed in a cavity in the package substrate, an interconnect bridge disposed in the cavity, the interconnect bridge including a second pad, and a third pad, and a layer disposed between the first pad and the second pad, the layer having a first conductivity between the first pad and the second pad, the layer having a second conductivity between the second pad and the third pad, the first conductivity greater than the second conductivity.

The present disclosure provides a display panel and a display device. A distance from a surface of a first conductive adhesive layer close to a first pin, electrically connecting the first conductive pad and the first pin, to the substrate is different from a distance of a surface of a second conductive adhesive layer electrically connected to the second conductive pad and the second pin to the substrate, to compensate for a height difference caused by the partial warpage of the pins on the drive chip when binding a drive chip, so as to ensure that the drive chip can be well bonded to the display panel.

A nanowire bonding interconnect for fine-pitch microelectronics is provided. Vertical nanowires created on conductive pads provide a debris-tolerant bonding layer for making direct metal bonds between opposing pads or vias. Nanowires may be grown from a nanoporous medium with a height between 200-1000 nanometers and a height-to-diameter aspect ratio that enables the nanowires to partially collapse against the opposing conductive pads, creating contact pressure for nanowires to direct-bond to opposing pads. Nanowires may have diameters less than 200 nanometers and spacing less than 1 m from each other to enable contact or direct-bonding between pads and vias with diameters under 5 m at very fine pitch. The nanowire bonding interconnects may be used with or without tinning, solders, or adhesives. A nanowire forming technique creates a nanoporous layer on conductive pads, creates nanowires within pores of the nanoporous layer, and removes at least part of the nanoporous layer to reveal a layer of nanowires less than 1 m in height for direct bonding.

A semiconductor structure and a method for forming the semiconductor structure are disclosed. The semiconductor structure includes a first die including a fuse structure in a topmost layer of the first die, the fuse structure including a pair of conductive segments, wherein one of the pair of conductive segments is electrically connected to a bonding pad of the first die, wherein the bonding pad is electrically connected to ground; and an inductor electrically connected to the one of the pair of conductive segments.