In accordance with certain embodiments, heat-dissipating elements are integrated with semiconductor dies and substrates in order to facilitate heat dissipation therefrom during operation.

A semiconductor device includes a semiconductor layer, an electrode layer arranged on the semiconductor layer, a crack starting point layer arranged above the semiconductor layer, and a solder layer being in contact with the electrode layer and the crack starting point layer. A joining force between the solder layer and the crack starting point layer is smaller than a joining force between the solder layer and the electrode layer.

A compliant micro device transfer head and head array are disclosed. In an embodiment a micro device transfer head includes a spring portion that is deflectable into a space between a base substrate and the spring portion.

A semiconductor package includes: a first semiconductor chip; a plurality of second semiconductor chips sequentially stacked on the first semiconductor chip and each including a plurality of connection terminals arranged side-by-side in a horizontal direction of the semiconductor package; a center encapsulation layer between the plurality of second semiconductor chips and surrounding at least some of the plurality of connection terminals; and a package encapsulation layer on a top surface of the first semiconductor chip and surrounding the plurality of second semiconductor chips, wherein the center encapsulation layer does not contact an outermost connection terminal from among the plurality of connection terminals.