A die attach film including an adhesive layer, an alumina filler disposed in the adhesive layer, and a diamond filler disposed in the adhesive layer, wherein a content of the alumina filler and the diamond filler in combination is about 70 parts by weight to about 85 parts by weight based on 100 parts by weight of the adhesive layer, and a ratio of parts by weight of the alumina filler to parts by weight of the diamond filler is about 2:1 to about 3:1.

According to one embodiment, a semiconductor device includes: a semiconductor chip; and a first conductive layer provided on a side of a first surface of the semiconductor chip, wherein the first conductive layer includes an intermetallic compound layer containing copper (Cu), tin (Sn), and silver (Ag), and a concentration of the silver relative to the tin in the first conductive layer is equal to or greater than 1.0 at % and equal to or less than 7.9 at %.

Semiconductor devices, fabrication methods thereof and memory systems are provided. In one aspect, a semiconductor device includes chips and a bonding dielectric layer. The chips are stacked along a thickness direction of the chips. The bonding dielectric layer is located between two adjacent ones of the chips. The bonding dielectric layer at least includes a first material and a second material, and thermal conductivity of the second material is greater than thermal conductivity of the first material.

A semiconductor device includes a semiconductor substrate and a sinterable electrical contact disposed over the semiconductor substrate. The sinterable electrical contact includes a copper-based layer disposed over the semiconductor substrate. The copper-based layer has a thickness between 50 nm and 1000 nm. The sinterable electrical contact further includes a titanium-based layer disposed between the copper-based layer and the semiconductor substrate. A final functional layer for bonding the sinterable electrical contact by sintering is either the copper-based layer or a silver-based layer disposed over the copper-based layer.

A display panel includes a pixel array substrate, a plurality of vertical light emitting devices and a flip-chip light emitting device. The pixel array substrate has a first pixel area and a second pixel area. The vertical light emitting devices are disposed in the first pixel area and the second pixel area and electrically connected to the pixel array substrate. The flip-chip light emitting device is disposed in the second pixel area and electrically connected to the pixel array substrate. A color of an emitted light beam of the flip-chip light emitting device and a color of an emitted light beam of one of the vertical light emitting devices located in the first pixel area are identical.

A semiconductor device is provided, including a die constituting the top layer of the semiconductor device, preferably made of silicone; a lead frame constituting the bottom layer of the semiconductor device, having high electrical conductivity in the range between 6.310.sup.7 Siemens to 110.sup.6 Siemens more preferably 110.sup.7 Siemens (electrical conductivity is normally measured in Siemens per meter S/m, range of conductivity for Cu alloy lead frames are between 5 to 610.sup.7 S/m) for example made of L/F C19210 material; a first layer formed from a metallic foam located between the lead frame and the die, with a thickness preferably in the range of 500 nm to 5000 nm more preferably 2000 nm, and with a porosity in range of 30% and 90% preferably 60% and a second layer located between the die and the lead frame being only partially in surface contact with the first layer.