The present disclosure provides a semiconductor structure. The semiconductor includes a substrate, a block bonded on the substrate, a first die bonded on the block, a second die disposed over the first die, and a heat spreader covering the block and having a surface facing toward and proximal to the block. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the block.

The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

A solid-state storage device includes a housing, a wiring board and a semiconductor package unit. The housing is formed with a heat-dissipating recess thereon. The wiring board is fixed in the housing. One side of the semiconductor package unit is mounted on the wiring board, and the other side of the semiconductor package unit is embedded in the heat-dissipating recess. A top surface and lateral surfaces surrounding the top surface of the semiconductor package unit are all thermally connected to the housing in the heat-dissipating recess.

A solid-state storage device includes a housing, a wiring board and a semiconductor package unit. The housing is formed with a heat-dissipating recess thereon. The wiring board is fixed in the housing. One side of the semiconductor package unit is mounted on the wiring board, and the other side of the semiconductor package unit is embedded in the heat-dissipating recess. A top surface and lateral surfaces surrounding the top surface of the semiconductor package unit are all thermally connected to the housing in the heat-dissipating recess.

A power amplification high-frequency circuit device includes: an input conversion pin; an output conversion pin; a high-frequency amplifier having an input terminal and an output terminal; a waveguide tube in which an input waveguide tube and an output waveguide tube face each other with a short wall interposed between the input waveguide tube and the output waveguide tube, an upper wall of the input waveguide tube has an input pin insertion hole into which the input conversion pin is inserted while being electrically insulated, an upper wall of the output waveguide tube has an output pin insertion hole into which the output conversion pin is inserted while being electrically insulated, an upper wall has a storage portion having a flat bottom surface, and the high-frequency amplifier is stored in the storage portion with a bottom surface thereof being in close contact with the bottom surface of the storage portion.

A display module includes a substrate including a mounting surface on which a plurality of inorganic light-emitting devices are mounted, a side surface, and a rear surface opposite to the mounting surface; a front cover covering the mounting surface and extending to an outer area from the mounting surface; a metal cover covering the rear surface and a first area of the side surface, the first area extending from the rear surface; and a side member positioned below the outer area from the mounting surface and adhered to a second area of the side surface, the second area extending from the mounting surface, and at least a portion of the metal cover. The metal cover includes a rear portion covering the rear surface, a side portion covering the first area of the side surface, and a bent portion bent between the rear portion and the side portion.

The present disclosure provides a semiconductor structure including a substrate, a first die over the substrate, a second die over the first die, a heat spreader having a sidewall facing toward and proximal to a sidewall of the first die, and a thermal interface material (TIM) between the sidewall of the first die and the sidewall of the heat spreader. A thermal conductivity of the heat spreader is higher than a thermal conductivity of the TIM.

A method of manufacturing a power semiconductor device in accordance with an embodiment of the present disclosure may include providing a substrate disposed atop a heatsink, electrically connecting a semiconductor die to a top surface of the substrate, disposing a thin metallic layer atop the substrate, disposing a terminal atop the thin metallic layer, and performing a welding operation wherein a laser beam is directed at a top surface of the terminal to produce a plurality of weld connections connecting the terminal to the substrate, wherein the weld connections are separated by gaps, and wherein heat generated during the welding operation melts the thin metallic layer and molten material of the thin metallic flows into the gaps.

The technique disclosed in the present specification is a technique for effectively reducing resistance even when the electrode shape has irregularities. A technique disclosed in the present specification is a semiconductor device includes a semiconductor chip, a case that houses the semiconductor chip therein, a main electrode electrically connected to the semiconductor chip via a wire and partially exposed to outside from the case, and a conductive material applied to a front surface of the main electrode exposed from the case, in which the front surface of the main electrode is the surface connected to a bus bar.