Disclosed examples include integrated circuits with a leadframe structure, a first circuit structure including a light source configured to generate a light signal along an optical path, a second circuit structure including a light sensor facing the optical path to receive the light signal, and a molded package structure enclosing portions of the leadframe structure, the molded package structure having a cavity defined by an interior surface of the molded package structure, the optical path extending in the cavity between the first and second circuit structures.

Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

A multi-chip package includes a package substrate including a first substrate pad, a first group of semiconductor chips stacked on the package substrate, each of the first group of the semiconductor chips including bonding pads, first stud bumps arranged on the bonding pads of the first group of the semiconductor chips except for a lowermost semiconductor chip in the first group, a first conductive wire downwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and connected to the first substrate pad, and a second conductive wire upwardly extended from the bonding pad of the lowermost semiconductor chip in the first group and sequentially connected to the first stud bumps.

A semiconductor package is disclosed including a number of stacked semiconductor die, electrically connected to each other with wire bonds. The stacked semiconductor die are provided in a mold compound such that a spacing exists between a top die in the die stack and a surface of the mold compound. The wire bonds to the top die may be provided in the spacing. An RDL pad is affixed to the surface of the mold compound. Columns of bumps may be formed on the die bond pads of the top die in the die stack to electrically couple the RDL pad to the die stack across the spacing.

Semiconductor dies in a stack of semiconductor dies are interconnected using metal lines instead of bond wires or through silicon vias (TSVs). The semiconductor dies in the stack are arranged in a stairstep configuration such that a step corner is defined between a top surface of a first semiconductor die in the stack and a sidewall of a second semiconductor die in the stack. A step ramp is formed in the step corner. The step ramp defines a slope that extends between the top surface of the first semiconductor die and a top surface of the second semiconductor die. A metal line is formed over a bond pad associated with the first semiconductor die, the step ramp and a bond pad associated with the second semiconductor die.

A circuit board includes a main board, a thermistor layer, a plurality of n-type semiconductor units and a plurality of p-type semiconductor units. The main board includes a first external structure, a second external structure, and an internal structure disposed between the first external structure and the second external structure. The internal structure includes a first internal circuit layer, a second internal circuit layer, and an insulating layer disposed between the first internal circuit layer and the second internal circuit layer. The thermistor layer is disposed on the insulating layer and the first internal circuit layer. The n-type semiconductor units and the p-type semiconductor units are electrically connected to the second internal circuit layer and the second external structure, in which the n-type semiconductor units and the p-type semiconductor units are alternately arranged in one direction.

Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

Disclosed is a semiconductor device that is capable of handling multiple different high-frequency contactless communication modes and that is formed by a multi-chip structure. A first semiconductor chip, which performs interface control of high-frequency contactless communication and data processing of communications data, is mounted on a wiring board; and a second semiconductor chip, which performs another data processing of the communication data, is mounted on the first semiconductor chip. In this case, transmission pads in the first semiconductor chip are arranged at positions farther from a periphery of the chip than those of receiving pads, and the second semiconductor chip is mounted by being biased on the first semiconductor chip so as to keep away the transmission pads.

Apparatuses relating generally to a substrate are disclosed. In such an apparatus, first wire bond wires (first wires) extend from a surface of the substrate. Second wire bond wires (second wires) extend from the surface of the substrate. The first wires and the second wires are external to the substrate. The first wires are disposed at least partially within the second wires. The first wires are of a first height. The second wires are of a second height greater than the first height for coupling of at least one electronic component to the first wires at least partially disposed within the second wires.

A semiconductor package comprises a package substrate and a first chip stack. The first chip stack includes: a first semiconductor chip on the package substrate, a plurality of second semiconductor chips that are on the first semiconductor chip and have an offset stack structure, and a plurality of first adhesive layers that are respectively on a bottom surface of the first semiconductor chip and bottom surfaces of the second semiconductor chips. The first semiconductor chip includes: a first semiconductor substrate, a plurality of first integrated elements on a top surface of the first semiconductor substrate, and a first wiring layer on the top surface of the first semiconductor substrate. A width of the first semiconductor chip and a width of a lowermost one of the second semiconductor chips are the same. The first semiconductor chip is electrically insulated from the package substrate and the second semiconductor chips.