The present disclosure provides a terminal assembly structure of a MEMS microphone, including a signal let out board disposed at a terminal and a silicon microphone disposed on the signal let out board. The silicon microphone includes a housing, a substrate forming an accommodation space with the housing, an MEMS chip and a waterproof member. The substrate is configured with a sound inlet connected to the outside. The waterproof member is sandwiched between the MEMS chip and the substrate. A position where the signal let out board corresponds to the silicon microphone is configured with an accommodation hole. The housing is accommodated in the accommodation hole. The substrate abuts a surface of the signal let out board and covers the accommodation hole. A surface of the substrate where the housing is assembled, is provided with at least one pad electrically connected with the signal let out board.

A plurality of small copper-filled TSV (through silicon via) interposer slivers dispersed in a fan-out wafer level package (FOWLP) for wire bonding interconnections forms a hybrid FOWLP/interposer multichip package that avoids the use of expensive large 2.5D TSV interposer modules for heterogeneous integration and for chiplets. Package fabrication on reconstituted wafers or panels can follow either the chip-first or RDL-first process.

A semiconductor device includes an insulating substrate having a main surface, a semiconductor element, a case member, and a sealing resin as a sealing material. The case member includes a recess that is continuous with a connection portion of the case member connected to the insulating substrate, and that faces the internal region. The recess includes a facing surface as an inner wall portion facing the main surface of the insulating substrate. A distance from the main surface of the insulating substrate to the facing surface as the inner wall portion is greater than a distance from the main surface to an upper surface of the semiconductor element.

A case (6) surrounds a semiconductor chip (5). A case electrode (7) is attached to an upper face of the case (6). A wire (8) is connected to the semiconductor chip (5) and the case electrode (7). A first holding portion (10) presses down the case electrode (7) on the upper face of the case (6) outside a joint portion where the wire (8) is bonded to the case electrode (7). A second holding portion (11) presses down the case electrode (7) on the upper face of the case (6) inside the joint portion. A recess (12) is formed on the upper face of the case (6). The case electrode (7) is bent such as to fit into the recess (12). The second holding portion (11) is disposed inside the recess (12).

A semiconductor device includes a heat sink, an integrated component in which a ceramic terminal having a microstrip line and a matching circuit are integrated into one unit, a lead fixed to the ceramic terminal, a matching substrate fixed to the heat sink, a semiconductor chip fixed to the heat sink, a plurality of wires configured to connect the matching circuit and the matching substrate and to connect electrically the matching substrate and the semiconductor chip, a frame configured to surround the matching substrate and the semiconductor chip in a plan view, and a cap provided on the frame.

A microwave module includes an RF device and a multilayer resin substrate. The device includes a metal cover covering at least an internal circuit. The substrate includes a first end face on a side of the device, a second end face on a side opposite to the first end face, a signal through-holes surrounding the circuit and connected to the circuit, ground through-holes surrounding the signal through-holes and connected to the cover, a first surface ground provided on the first end face and connected to the cover, an inner layer surface ground connected to ground through-holes, and an RF transmission line surrounded by the ground through-holes, the first surface ground, and the inner layer surface ground, and connected to the signal through-hole.

To provide a mold release film which has excellent mold releasing property and is capable of reducing contamination of a mold in a sealing step; a process for producing the mold release film; and a process for producing a semiconductor package by using the mold release film. The mold release film 1 is a mold release film to be disposed on a surface of a mold which is to be in contact with a curable resin, in the production of a semiconductor package by disposing a semiconductor element in the mold, and sealing it with the curable resin to form a resin sealed portion. This mold release film 1 comprises a resin-side mold release layer 2 to be in contact with the curable resin at the time of forming the resin sealed portion, and a gas barrier layer 3. The gas barrier layer 3 contains at least one polymer (I) selected from the group consisting of a polymer having vinyl alcohol units and a polymer having vinylidene chloride units, and the thickness of the gas barrier layer 3 is from 0.1 to 5 m.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding wires bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding wires may be copper bonding wires having a diameter of between about 10 microns and about 100 microns.

Power amplifier electronics for controlling application of radio frequency (RF) energy generated using solid state electronic components may further be configured to control application of RF energy in cycles between high and low powers. The power amplifier electronics may include a semiconductor die on which one or more RF power transistors are fabricated, an output matching network configured to provide impedance matching between the semiconductor die and external components operably coupled to an output tab, and bonding ribbon bonded at terminal ends thereof to operably couple the one or more RF power transistors of the semiconductor die to the output matching network. The bonding ribbon may have a width of greater than about five times a thickness of the bonding ribbon.

A semiconductor device includes a first and second semiconductor chips, a resistive component, and a semiconductor chip including a first circuit coupled to electrodes on both ends of the resistive component. A sealing body has a first long side, a second side, a third short side, and a fourth short side. In a Y-direction, each of the first and second semiconductor chips is disposed at a position closer to the first side than to the second side, while the semiconductor chip is disposed at a position closer to the second side than to the first side. Also, in the Y-direction, the resistive component, the second semiconductor chips, and the first semiconductor chips are arranged in order of increasing distance from the third side toward the fourth side, while the semiconductor chip is disposed at a position closer to the third side than to the fourth side.