Patent classifications
H01L2224/48175
SEMICONDUCTOR DEVICE AND POWER MODULE
A semiconductor device of a double-side cooling structure having a bus bar electrically connected, and coolers independently arranged on both sides of the semiconductor device for cooling is provided. The semiconductor device includes: a semiconductor chip including an element, and has a first main surface and a second main surface; a sealing resin body having a first surface and a second surface and also having a side surface; a first heatsink arranged facing the first main surface and electrically connected to the first main electrode; and a second heatsink arranged facing the second main surface and electrically connected to the second main electrode. The first heatsink is exposed only to the first surface. The second heatsink is exposed only to the second surface. An exposed surface of a heatsink to be electrically connected to the bus bar has a heat dissipation region, and an electrical connection region.
Semiconductor die, semiconductor device and IGBT module
A semiconductor die includes a semiconductor body having first and second active portions. The first active portion includes first source regions. The second active portion includes second source regions. A gate structure extends from a first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. A first load pad and the first source regions are electrically connected. A second load pad and the second source regions are electrically connected. A gap laterally separates the first and second load pads. A lateral longitudinal extension of the gap is parallel to the first direction or deviates therefrom by not more than 60 degree. A connection structure electrically connects the first and second load pads. The connection structure is formed in a groove extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface.
COUPLED SEMICONDUCTOR PACKAGE
Provided is a coupled semiconductor package including at least two substrate pads; at least one semiconductor chip installed on each of the substrate pads; at least one terminal each of which is electrically connected to each substrate pad and each semiconductor chip; and a package housing covering a part of the at least one semiconductor chip and the at least one terminal, wherein lower surfaces of one or more substrate pads are formed to be electrically connected and lower surfaces of another one or more substrate pads are formed to be electrically insulated. Accordingly, partial insulation may be economically realized without applying an insulating material to a heat sink, when the package is joined to the heat sink.
MULTICHIP PACKAGE AND FABRICATION METHOD THEREOF
A multichip package and a method for manufacturing the same are provided. A multichip package includes: a plurality of semiconductor chips each mounted on corresponding lead frame pads; lead frames connected to the semiconductor chips by a bonding wire; and fixed frames integrally formed with at least one of the lead frame pads and configured to support the lead frame pads on a package-forming substrate.
Semiconductor device and method of forming ultra thin multi-die face-to-face WLCSP
A semiconductor device has a first semiconductor die stacked over a second semiconductor die which is mounted to a temporary carrier. A plurality of bumps is formed over an active surface of the first semiconductor die around a perimeter of the second semiconductor die. An encapsulant is deposited over the first and second semiconductor die and carrier. A plurality of conductive vias is formed through the encapsulant around the first and second semiconductor die. A portion of the encapsulant and a portion of a back surface of the first and second semiconductor die is removed. An interconnect structure is formed over the encapsulant and the back surface of the first or second semiconductor die. The interconnect structure is electrically connected to the conductive vias. The carrier is removed. A heat sink or shielding layer can be formed over the encapsulant and first semiconductor die.
ELECTRIC DRIVE MODULE
An electric drive module having a motor and an inverter that are disposed in a housing The motor includes a stator, which has a plurality of sets of windings. The inverter has a plurality of power semiconductors, which are mounted into a retaining member, an end plate, which is sealingly coupled to the retaining member, and an inlet port that extends through the end plate. Sets of the semiconductor devices are electrically coupled to corresponding sets of the windings. Power terminals on the semiconductor devices are coupled to a heat sink. Fins on the heat sinks extend into an annular region that is adjacent to axial ends of the windings. At least one of the retaining member and the end plate is sealingly coupled to the housing assembly. The inlet port, the annular region and cooling passages in the stator are coupled in fluid communication.
Noble metal-coated silver wire for ball bonding and method for producing the same, and semiconductor device using noble metal-coated silver wire for ball bonding and method for producing the same
A noble metal-coated silver bonding wire suppresses corrosion at the bonding interface under severe conditions of high temperature and high humidity, and the noble metal-coated silver bonding wire can be ball-bonded in the air. The noble metal-coated silver wire for ball bonding is a noble metal-coated silver wire including a noble metal coating layer on a core material made of pure silver or a silver alloy, wherein the wire contains at least one sulfur group element, the noble metal coating layer includes a palladium intermediate layer and a gold skin layer, the palladium content relative to the entire wire is 0.01 mass % or more and 5.0 mass % or less, the gold content relative to the entire wire is 1.0 mass % or more and 6.0 mass % or less, and the sulfur group element content relative to the entire wire is 0.1 mass ppm or more and 100 mass ppm or less.
Electric drive module
An electric drive module having a motor and an inverter that are disposed in a housing The motor includes a stator, which has a plurality of sets of windings. The inverter has a plurality of power semiconductors, which are mounted into a retaining member, an end plate, which is sealingly coupled to the retaining member, and an inlet port that extends through the end plate. Sets of the semiconductor devices are electrically coupled to corresponding sets of the windings. Power terminals on the semiconductor devices are coupled to a heat sink. Fins on the heat sinks extend into an annular region that is adjacent to axial ends of the windings. At least one of the retaining member and the end plate is sealingly coupled to the housing assembly. The inlet port, the annular region and cooling passages in the stator are coupled in fluid communication.
Semiconductor device and method of manufacturing semiconductor device
A semiconductor device, including a substrate having an insulating layer and a plurality of circuit patterns formed on the insulating layer, the substrate having a principal surface on which an element region is set. The semiconductor device further includes a plurality of semiconductor elements provided on the plurality of circuit patterns in the element region, a plurality of main terminals that each have a first end joined to one of the plurality of circuit patterns in the element region and a second end extending out of the substrate from a first side of the substrate, a plurality of control terminals disposed in a control region that is adjacent to a second side of the substrate opposite the first side, and a sealing member that seals the principal surface and the control region.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Embodiments include a semiconductor manufacturing method comprising, providing an object to be processed, the object including a semiconductor element, a sealing resin layer sealing the semiconductor element, a ground terminal electrically connected to the semiconductor element and including a first protruding part protruding through a surface of the resin layer, and a signal terminal electrically connected to the semiconductor element and including a second protruding part protruding through the surface of the resin layer; positioning the object in a jig, wherein the jig covers the entire second protruding part of the signal terminal, and wherein the jig only partially covers the first protruding part of the ground terminal, such that at least a first portion of the first protruding part of the ground terminal is left uncovered by the jig; while the object is positioned in the jig, fabricating a conductive shield layer on the resin layer and at least some of the first portion of the first protruding part of the ground terminal, such that the shield layer is electrically connected to ground terminal.