A semiconductor device according to an embodiment includes a first-conductivity-type SiC substrate, a first-conductivity-type SiC layer provided on the SiC substrate, having a first surface, and having a lower first-conductivity-type impurity concentration than the SiC substrate, first second-conductivity-type SiC regions provided in the first surface of the SiC layer, second second-conductivity-type SiC regions provided in the first SiC regions and having a higher second-conductivity-type impurity concentration than the first SiC region, silicide layers provided on the second SiC regions and having a second surface, a difference between a distance from the SiC substrate to the second surface and a distance from the SiC substrate to the first surface being equal to or less than 0.2 μm, a first electrode provided to contact with the SiC layer and the silicide layers, and a second electrode provided to contact with the SiC substrate.

A power switch module including a switch element, an electromagnetic relay (EMR) and a switching circuit is provided. A first terminal of the switch element is grounded. A control terminal of the switch element receives a driving signal. First control terminals of the switching circuit and the EMR are coupled to a DC power. Second control terminals of the switching circuit and the EMR are coupled to a second terminal of the switch element. Power input terminals of the switching circuit and the EMR are coupled to each other and coupled to an input terminal of the power switch module. Power output terminals of the switching circuit and the EMR are coupled to each other and coupled to an output terminal of the power switch module. The switching circuit is configured to prevent an arc phenomenon caused on the EMR when the EMR is turned on or turned off.

A power switch module including a switch element, an electromagnetic relay (EMR) and a switching circuit is provided. A first terminal of the switch element is grounded. A control terminal of the switch element receives a driving signal. First control terminals of the switching circuit and the EMR are coupled to a DC power. Second control terminals of the switching circuit and the EMR are coupled to a second terminal of the switch element. Power input terminals of the switching circuit and the EMR are coupled to each other and coupled to an input terminal of the power switch module. Power output terminals of the switching circuit and the EMR are coupled to each other and coupled to an output terminal of the power switch module. The switching circuit is configured to prevent an arc phenomenon caused on the EMR when the EMR is turned on or turned off.