Patent classifications
H
ELECTRICITY
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H01
ELECTRIC ELEMENTS
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H01L
SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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29/00
Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; ; Multistep manufacturing processes therefor;
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H01L29/66
Types of semiconductor device; ; Multistep manufacturing processes therefor
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H01L29/66007
Multistep manufacturing processes
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H01L29/66075
of devices having semiconductor bodies comprising group 14 or group 13/15 materials
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H01L29/66227
the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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H01L29/66409
Unipolar field-effect transistors
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H01L29/66848
with a Schottky gate, i.e. MESFET
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H01L29/66856
with an active layer made of a group 13/15 material
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H01L29/66863
Lateral single gate transistors
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H01L29/66878
Processes wherein the final gate is made before the formation, e.g. activation anneal, of the source and drain regions in the active layer
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H01L29/66878

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
20230326758 · 2023-10-12 · ·

A substrate (1) having a GaN surface (2) is immersed in a catalyst metal solution (4) containing potassium hydroxide and a plating catalyst metal salt while being irradiated with ultraviolet light to deposit a catalyst metal (5) on the GaN surface (2). A metal film (7) is formed on the GaN surface (2) having the catalyst metal (5) deposited thereon by electroless plating.