A thin film transistor, its manufacturing method, and a display device are provided. The method comprises: forming a gate metal layer (35), forming a step-like gate structure (352) by one patterning process; performing a first ion implantation procedure to forming a first heavily doped area (39a) and a second heavily doped area (39b), the first heavily doped area (39a) being separated apart from the second heavily doped area (39b) by a first length; forming a gate electrode (353) from the step-like gate structure (352); performing a second ion implantation procedure to form a first lightly doped area (38a) and a second lightly doped area (38b), the first lightly doped area (38a) being separated apart from the second lightly doped area (38b) by a second length less than the first length. By the above method, the process for manufacturing the LTPS TFT having the lightly doped source/drain structure can be simplified.

A thin-film transistor substrate is disclosed, which comprises a base layer; a semiconductor layer disposed on the base layer; a source electrode and a drain electrode disposed on the semiconductor layer; and a gate electrode disposed on the base layer and corresponding to the semiconductor layer; wherein the semiconductor layer includes a first region, a second region, and a third region, in which the first region corresponds to the gate electrode layer, the second region corresponds to the source electrode, and the third region corresponds to the drain electrode; and wherein the first region has a first thickness, the second region has a second thickness, and the third region has a third thickness, and the first thickness is greater than the second thickness or the third thickness.

Provided are an array substrate and a liquid crystal display device. The array substrate includes a base plate and a low temperature poly-silicon layer, a first insulation layer, a gate zone, a second insulation layer, a source zone, a drain zone, a planarization layer, a first transparent conductive layer, a third insulation layer, and a second transparent conductive layer that are arranged on the same side of the base plate. The gate zone covers the first insulation layer. The source zone and the drain zone are respectively connected to two ends of the low temperature poly-silicon layer. The second transparent conductive layer is connected to the drain zone and the second transparent conductive layer includes a plurality of spaced conductive zones.

A liquid crystal display panel and a mobile phone. The liquid crystal display panel includes a first screen and a second screen which are disposed adjacently, the two screens are controlled by independent light strips, the light strips are both disposed in a backlight module, wherein, the second screen includes an array substrate and a color filter substrate, the array substrate includes multiple reflective electrodes disposed separately. Accordingly, the second screen of the liquid crystal panel of the present invention can reflect an external environment light to decrease the dependence on the backlight source such that the power consumption can be saved.

A thin film transistor (TFT) substrate comprises a TFT located on a substrate and including a gate electrode, a first semiconductor layer and a second semiconductor layer, wherein the first semiconductor layer, the gate electrode and the second semiconductor layer vertically stacked, and the first and second semiconductor layers are made of polycrystalline silicon, and wherein the first and second semiconductor layers are electrically connected to each other in series and respectively include first and second channel portions, and at least one of the first and second channel portions has a bent structure in a plan view.

To provide a method for driving a semiconductor device, by which influence of variation in threshold voltage and mobility of transistors can be reduced. The semiconductor device includes an n-channel transistor, a switch for controlling electrical connection between a gate and a first terminal of the transistor, a capacitor electrically connected between the gate and a second terminal of the transistor, and a display element. The method has a first period for holding the sum of a voltage corresponding to the threshold voltage of the transistor and an image signal voltage in the capacitor; a second period for turning on the switch so that electric charge held in the capacitor in accordance with the sum of the image signal voltage and the threshold voltage is discharged through the transistor; and a third period for supplying a current to the display element through the transistor after the second period.

A method of forming a semiconductor device and resulting structures having nanosheet transistors with sharp junctions by forming a nanosheet stack over a substrate, the nanosheet stack having a plurality of nanosheets alternating with a plurality of sacrificial layers, such that a topmost and a bottommost layer of the nanosheet stack is a sacrificial layer; forming an oxide recess on a first and a second end of each sacrificial layer; and forming a doped extension region on a first and a second end of each nanosheet.

The present invention provides a thin film transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, which are laminated on a substrate. The semiconductor layer is a polysilicon thin film. The polysilicon thin film in regions corresponding to the source electrode and the drain electrode has a smaller crystal grain size than that of the polysilicon thin film in a channel region between the source electrode and the drain electrode.

Disclosed are an oxide thin-film transistor and a method of fabricating the same. The oxide thin-film transistor according to an embodiment of the present disclosure includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; and an oxide thin film formed on the gate insulating layer, wherein the oxide thin film include a channel region, source region and drain regions disposed on the channel region and spaced apart from each other, and a concentration profile due to a dopant diffused from the gate insulating layer, wherein the channel region operates as a channel layer by the concentration profile.

The present invention provides a manufacture method of a Low Temperature Poly-silicon TFT substrate and a Low Temperature Poly-silicon TFT substrate. In the manufacture method of the Low Temperature Poly-silicon TFT substrate according to the present invention, by employing the tilted ion beam to implement high dose ion implantation to the polysilicon layer to form the heavy doped area, and then employing the perpendicular ion beam to implement low dose ion implantation to the polysilicon layer to form the light doped area, the thin film transistor having the single side LDD area can be easily manufactured, and thus to diminish the hot carrier effect and electrical leakage of the thin film transistor for simplifying the manufacture process and lowering the manufacture cost.