A display module and a method for manufacturing thereof are provided. The display module includes a glass substrate; a thin film transistor (TFT) layer provided on a surface of the glass substrate, the TFT layer including a plurality of TFT electrode pads; a plurality of light emitting diodes (LEDs) provided on the TFT layer, each of the plurality of LEDs including LED electrode pads that are electrically connected to respective TFT electrode pads among the plurality of TFT electrode pads; and a light shielding member provided on the TFT layer and between the plurality of LEDs, wherein a height of the light shielding member with respect to the TFT layer is lower than a height of the plurality of LEDs with respect to the TFT layer.

A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.

A method of soldering includes providing a substrate having a first metal joining surface, providing a semiconductor die having a second metal joining surface, providing a solder preform having a first interface surface and a second interface surface, arranging the solder preform between the substrate and the semiconductor die such that the first interface surface faces the first metal joining surface and such that the second interface surface faces the second metal joining surface, and performing a mechanical pressure-free diffusion soldering process that forms a soldered joint between the substrate and the semiconductor die by melting the solder preform and forming intermetallic phases in the solder. One or both of the first interface surface and the second interface surface has a varying surface profile that creates voids between the solder preform and one or both of the substrate and the semiconductor die before the melting of the solder preform.

A semiconductor package and a method of manufacturing the same, and an imaging apparatus are provided. The method includes preparing a substrate having a first connection region and a sensor chip having a second connection region. A first bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the first connection region. A second bonding layer including multi-layer nano low-melting-point metal materials with different melting point gradients is provided on the second connection region. The substrate and the sensor chip are overlapped to align and tightly compress the first and second bonding layers, to obtain a composite structure. The composite structure is treated at a temperature of 30 to 180° C., under a pressure of 1 to 8 MPa, and with an ultrasonic of 10 to 30 kHz to form the first and second bonding layers into a eutectic.

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

A semiconductor device includes a semiconductor die with a metallization layer including a first metal with a comparatively high melting point, a die carrier including a second metal with a comparatively high melting point, a first intermetallic compound arranged between the semiconductor die and the die carrier and including the first metal and a third metal with a comparatively low melting point, a second intermetallic compound arranged between the first intermetallic compound and the die carrier and including the second metal and the third metal, and precipitates of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and including the third metal and a fourth metal with a comparatively high melting point.

A semiconductor device includes a semiconductor die with a metallization layer including a first metal with a comparatively high melting point, a die carrier including a second metal with a comparatively high melting point, a first intermetallic compound arranged between the semiconductor die and the die carrier and including the first metal and a third metal with a comparatively low melting point, a second intermetallic compound arranged between the first intermetallic compound and the die carrier and including the second metal and the third metal, and precipitates of a third intermetallic compound arranged between the first intermetallic compound and the second intermetallic compound and including the third metal and a fourth metal with a comparatively high melting point.

A display module and a method for manufacturing thereof are provided. The display module includes a glass substrate; a thin film transistor (TFT) layer provided on a surface of the glass substrate, the TFT layer including a plurality of TFT electrode pads; a plurality of light emitting diodes (LEDs) provided on the TFT layer, each of the plurality of LEDs including LED electrode pads that are electrically connected to respective TFT electrode pads among the plurality of TFT electrode pads; and a light shielding member provided on the TFT layer and between the plurality of LEDs, wherein a height of the light shielding member with respect to the TFT layer is lower than a height of the plurality of LEDs with respect to the TFT layer.

Solid metal foam thermal interface materials and their uses in electronics assembly are described. In one implementation, a method includes: applying a thermal interface material (TIM) between a first device and a second device to form an assembly having a first surface of the TIM in in touching relation with a surface of the first device, and a second surface of the TIM opposite the first surface in touching relation with a surface of the second device, the TIM comprising a solid metal foam and a first liquid metal; and compressing the assembly to form an alloy from the TIM that bonds the first device to the second device.