The method for assembling a carrier comprises a step A), in which a plurality of pigments (100), each with an electronic component (1), is provided. Further, each pigment comprises a meltable solder material (2) directly adjoining a mounting side (10) of the component. At least 63% by volume of each pigment is formed by the solder material. The mounting side of each component has a higher wettability with the molten solder material than a top side (12) and a side surface (11) of the component. In a step B), a carrier (200) with pigment landing areas (201) is provided, the pigment landing areas having higher wettability with the molten solder material of the pigments than the regions laterally adjacent to the pigment landing areas and than the side surfaces and the top sides of the components. In a step C), the pigments are applied to the carrier. In a step D), the pigments are heated so that the solder material melts.

An integrated circuit assembly may be formed comprising an electronic substrate, a first and second integrated circuit device each having a first surface, a second surface, at least one side extending between the first and second surface, and an edge defined at an intersection of the second surface and the at least one side of each respective integrated circuit device, wherein the first surface of each integrated circuit device is electrically attached to the electronic substrate, an underfill material between the first surface of each integrated circuit device and the electronic substrate, and between the sides of the first and second integrated circuit devices, and at least one barrier structure adjacent at least one of the edge of first integrated circuit device and the edge of the second integrated circuit device, wherein the underfill material abuts the at least one barrier structure.

An integrated circuit assembly may be formed comprising an electronic substrate, a first and second integrated circuit device each having a first surface, a second surface, at least one side extending between the first and second surface, and an edge defined at an intersection of the second surface and the at least one side of each respective integrated circuit device, wherein the first surface of each integrated circuit device is electrically attached to the electronic substrate, an underfill material between the first surface of each integrated circuit device and the electronic substrate, and between the sides of the first and second integrated circuit devices, and at least one barrier structure adjacent at least one of the edge of first integrated circuit device and the edge of the second integrated circuit device, wherein the underfill material abuts the at least one barrier structure.

A second-level thermal interface material (TIM2) that is to couple to a system-level thermal solution is applied to an integrated circuit (IC) assembly comprising an IC die and an assembly substrate prior to the assembly substrate being joined to a host component at the system-level. Challenges associated with TIM2 application may therefore be addressed at a first level of IC die integration, simplifying subsequent assembly and better controlling thermal coupling to a subsequently applied thermal solution. Where a first-level IC assembly includes a stiffener, the TIM may be affixed to the stiffener through an adhesive bond or a fusion bond. After the IC assembly including the TIM is soldered to the host board, a thermal solution may be placed in contact with the TIM. With early application of a solder TIM, a solder TIM may be reflowed upon the IC die multiple times.

A second-level thermal interface material (TIM2) that is to couple to a system-level thermal solution is applied to an integrated circuit (IC) assembly comprising an IC die and an assembly substrate prior to the assembly substrate being joined to a host component at the system-level. Challenges associated with TIM2 application may therefore be addressed at a first level of IC die integration, simplifying subsequent assembly and better controlling thermal coupling to a subsequently applied thermal solution. Where a first-level IC assembly includes a stiffener, the TIM may be affixed to the stiffener through an adhesive bond or a fusion bond. After the IC assembly including the TIM is soldered to the host board, a thermal solution may be placed in contact with the TIM. With early application of a solder TIM, a solder TIM may be reflowed upon the IC die multiple times.

An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

An integrated circuit (IC) die structure comprises a substrate material comprising silicon. Integrated circuitry is over a first side of the substrate material. A composite layer is in direct contact with a second side of the substrate material. The second side is opposite the first side. The composite layer comprises a first constituent material associated with a first linear coefficient of thermal expansion (CTE), and a first thermal conductivity exceeding that of the substrate. The composite layer also comprises a second constituent material associated with a second CTE that is lower than the first, and a second thermal conductivity exceeding that of the substrate.

An electronic device with a multi-layer contact and a system is disclosed. In an embodiment, a semiconductor device includes a semiconductor substrate having a first electrode terminal located on a first surface and a second surface electrode terminal located on a second surface, the first surface being opposite to the second surface, an electrical contact layer disposed directly on the first electrode terminal, a functional layer directly disposed on the electrical contact layer, an adhesion layer directly disposed on the functional layer, a solder layer directly disposed on the adhesion layer; and a protection layer directly disposed on the solder layer, wherein the semiconductor device is a power semiconductor device configured to provide a vertical current flow.

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.

A highly reliable bonded structure having excellent thermal fatigue resistance characteristics and thermal stress relaxation characteristics is provided. The bonded structure of the present invention comprises a first member, a second member capable of being bonded to the first member, and a bonding part interposed between a first bond surface at the first member side and a second bond surface at the second member side to bond the first member and the second member. The bonding part has at least a bonding layer, a reinforcing layer, and an intermediate layer. The bonding layer is composed of an intermetallic compound and bonded to the first bond surface.