Processes of joining substrates via transient liquid phase bonding (TLPB). The processes include providing an interlayer of a low melting temperature phase (LTP) that includes Sn and Bi between and in contact with at least two substrates, and heating the substrates and the interlayer therebetween at a processing temperature equal to or above 200° C. such that the interlayer liquefies and the LTP interacts with high melting temperature phases (HTPs) of the substrates to yield isothermal solidification of the interlayer. The processing temperature is maintained for a duration sufficient for the interlayer to be completely consumed and a solid bond is formed between the substrates. Also provided are assemblies formed by the above noted processes.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

A semiconductor package includes a semiconductor chip disposed over a first main surface of a first substrate, a package lid disposed over the semiconductor chip, and spacers extending from the package lid through corresponding holes in the first substrate. The spacers enter the holes at a first main surface of the first substrate and extend beyond an opposing second main surface of the first substrate.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

In described examples, a microelectronic device includes a microelectronic die with a die attach surface. The microelectronic device further includes a nanoparticle layer coupled to the die attach surface. The nanoparticle layer may be in direct contact with the die attach surface, or may be coupled to the die attach surface through an intermediate layer, such as an adhesion layer or a contact metal layer. The nanoparticle layer includes nanoparticles having adjacent nanoparticles adhered to each other. The microelectronic die is attached to a package substrate by a die attach material. The die attach material extends into the nanoparticle layer and contacts at least a portion of the nanoparticles.

A semiconductor device of embodiments includes a substrate; a semiconductor chip provided above the substrate; a first ultrasonic bonding portion provided between the substrate and the semiconductor chip; a first terminal plate electrically connected to the semiconductor chip via the first ultrasonic bonding portion, the first ultrasonic bonding portion being provided on the substrate, and the first terminal plate having a first surface facing the semiconductor chip; and a first adhesive layer provided on the first surface, and the first adhesive layer containing a first adhesive.

A semiconductor device of embodiments includes a substrate; a semiconductor chip provided above the substrate; a first ultrasonic bonding portion provided between the substrate and the semiconductor chip; a first terminal plate electrically connected to the semiconductor chip via the first ultrasonic bonding portion, the first ultrasonic bonding portion being provided on the substrate, and the first terminal plate having a first surface facing the semiconductor chip; and a first adhesive layer provided on the first surface, and the first adhesive layer containing a first adhesive.

A highly-reliable semiconductor device has improved adhesion between a sealing material and a sealed metal member and/or a case member. In some implementations, the semiconductor device includes: a laminated substrate on which a semiconductor element is mounted; and a sealing material. In some implementations, the sealing material contains an epoxy base resin, a curing agent, and a phosphonic acid.

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor element 11 mounted on a laminated substrate 12 and an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layer 20 sealing members to be sealed including the laminated substrate 12, the semiconductor element 11, and the electrically conductive connecting member and including a thermosetting resin, and a protective layer 21 coating the sealing layer and including a silicone rubber, and wherein a value A.sub.1 of a tensile strength × elongation at break of the sealing layer 20 is less than a value A.sub.2 of a tensile strength × elongation at break of the protective layer 21, and the A.sub.2 is 1600 MPa or less.

A semiconductor device in which even when cracks occur in a sealing material, the entry of moisture through the cracks can be prevented. A semiconductor device comprising a semiconductor element 11 mounted on a laminated substrate 12 and an electrically conductive connecting member, and a sealing material which seals the semiconductor element and the electrically conductive connecting member, wherein the sealing material includes a sealing layer 20 sealing members to be sealed including the laminated substrate 12, the semiconductor element 11, and the electrically conductive connecting member and including a thermosetting resin, and a protective layer 21 coating the sealing layer and including a silicone rubber, and wherein a value A.sub.1 of a tensile strength × elongation at break of the sealing layer 20 is less than a value A.sub.2 of a tensile strength × elongation at break of the protective layer 21, and the A.sub.2 is 1600 MPa or less.