Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.

Methods for forming bonded assemblies using metal inverse opal and cap structures are disclosed. In one embodiment, a method for forming a bonded assembly includes positioning a substrate against a polymer support that is porous, depositing a metal onto and within the polymer support, disposing a cap layer to the polymer support opposite of the substrate to form a bottom electrode, and removing the polymer support from between the substrate and the cap layer to form a metal inverse opal structure disposed therebetween.

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

There are provided an adhesive film for a semiconductor including: a conductive layer containing at least one metal selected from the group consisting of copper, nickel, cobalt, iron, stainless steel (SUS), and aluminum, and having a thickness of 0.05 m or more; and an adhesive layer formed on at least one surface of the conductive layer and including a (meth)acrylate-based resin, a curing agent, and an epoxy resin, and a semiconductor device including the above-mentioned adhesive film.

The present disclosure relates to semiconductor structures and, more particularly, to seal ring structures with channels and methods of manufacture. The structure includes: a first wafer having a channel formed within a passivation layer; a second wafer having a protuberance which is insertable into the channel and which is bonded to the first wafer with eutectic bonding materials; and a plurality of stoppers or tabs extending within the channel and which provides a gap that has a dimension smaller than a gap formed in other portions of the channel.

An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.

An assembly that includes a first substrate, a second substrate, and a stress mitigation layer disposed between the first and the second substrates. The stress mitigation layer is directly bonded onto the second substrate, and the second substrate is separated from the intermetallic compound layer by the stress mitigation layer. The stress mitigation layer has a high purity of at least 99% aluminum such that the stress mitigation layer reduces thermomechanical stresses on the first and second substrates. The assembly further includes an intermetallic compound layer disposed between the first substrate and the stress mitigation layer such that the stress mitigation layer is separated from the first substrate by the intermetallic compound layer.

The present disclosure relates to an anisotropic conductive film (ACF) with controllable distribution state of conductive substance and a manufacturing method thereof. The ACF includes: a porous template, a plurality of conductive tubes, and an insulation glue layer. A plurality of through holes are configured on the porous template and to penetrate the porous template along a thickness direction of the porous template. Each of the conductive tubes is respectively inserted into one through hole and protrudes from the through hole at both ends, and the insulation glue layer is configured to wrap at least one protruding portion of the conductive tube protruding from the porous template. As such, the distribution state of the conductive tube may be controlled by controlling the density of the through holes within the porous template during the preparation process, and the distribution state of the conductive substances in the ACF may be precisely controlled.

The present disclosure relates to an anisotropic conductive film (ACF) with controllable distribution state of conductive substance and a manufacturing method thereof. The ACF includes: a porous template, a plurality of conductive tubes, and an insulation glue layer. A plurality of through holes are configured on the porous template and to penetrate the porous template along a thickness direction of the porous template. Each of the conductive tubes is respectively inserted into one through hole and protrudes from the through hole at both ends, and the insulation glue layer is configured to wrap at least one protruding portion of the conductive tube protruding from the porous template. As such, the distribution state of the conductive tube may be controlled by controlling the density of the through holes within the porous template during the preparation process, and the distribution state of the conductive substances in the ACF may be precisely controlled.

A chip package structure is provided. The chip package structure includes a substrate having a first surface and a second surface opposite to the first surface. The chip package structure includes a first chip structure and a second chip structure over the first surface. The chip package structure includes a protective layer over the first surface and surrounding the first chip structure and the second chip structure. A portion of the protective layer is between the first chip structure and the second chip structure. The chip package structure includes a first anti-warpage bump over the second surface and extending across the portion of the protective layer. The chip package structure includes a conductive bump over the second surface and electrically connected to the first chip structure or the second chip structure. The first anti-warpage bump is wider than the conductive bump.