In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A semiconductor package that effectively controls heat generated from a semiconductor chip is provided. A semiconductor device with improved product reliability and performance is provided. A semiconductor package comprises a substrate including a first surface and a second surface facing each other, a first semiconductor chip and a second semiconductor chip disposed on the first surface of the substrate, a first heat spreader formed on the first semiconductor chip and the second semiconductor chip, and a second heat spreader which protrudes from the first heat spreader and covers an upper part of the first semiconductor chip, wherein the first semiconductor chip includes a first side wall extending in a first direction, the second semiconductor chip includes a second side wall extending in the first direction and facing the first side wall of the first semiconductor chip in a second direction intersecting the first direction, and an area of the second heat spreader at a boundary between the first heat spreader and the second heat spreader is smaller than or equal to an area of an upper surface of the first semiconductor chip.

A semiconductor package that effectively controls heat generated from a semiconductor chip is provided. A semiconductor device with improved product reliability and performance is provided. A semiconductor package comprises a substrate including a first surface and a second surface facing each other, a first semiconductor chip and a second semiconductor chip disposed on the first surface of the substrate, a first heat spreader formed on the first semiconductor chip and the second semiconductor chip, and a second heat spreader which protrudes from the first heat spreader and covers an upper part of the first semiconductor chip, wherein the first semiconductor chip includes a first side wall extending in a first direction, the second semiconductor chip includes a second side wall extending in the first direction and facing the first side wall of the first semiconductor chip in a second direction intersecting the first direction, and an area of the second heat spreader at a boundary between the first heat spreader and the second heat spreader is smaller than or equal to an area of an upper surface of the first semiconductor chip.

A display panel, a display screen, and a manufacturing method of a display screen are provided. The display panel includes a light-emitting assembly, a driving assembly, multiple first conductive members, and multiple second conductive members. The light-emitting assembly includes multiple light-emitting units, where each of the multiple light-emitting units includes a first electrode and a second electrode spaced apart from the first electrode, and the first electrode surrounds the second electrode. The driving assembly includes multiple driving units, where one of the multiple driving units is disposed in correspondence with one of the multiple light-emitting units, and different driving units correspond to different light-emitting units. Each of the multiple driving units includes a third electrode and a fourth electrode spaced apart from the third electrode, and the third electrode surrounds the fourth electrode. Each of the multiple first conductive members couples the first electrode with the third electrode.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m.Math.K to approximately 20 W/m.Math.K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.

A semiconductor package includes: a first package substrate; a first semiconductor device mounted on the first package substrate; a second package substrate arranged on an upper part of the first semiconductor device; and a heat-dissipating material layer arranged between the first semiconductor device and the second package substrate and having a thermal conductivity of approximately 0.5 W/m.Math.K to approximately 20 W/m.Math.K, wherein the heat-dissipating material layer is in direct contact with an upper surface of the first semiconductor device and a conductor of the second package substrate.

A semiconductor device is disclosed including one or more semiconductor dies mounted on substrate. Each semiconductor die may be formed with a ferromagnetic layer on a lower, inactive surface of the semiconductor die. The ferromagnetic layer pulls the semiconductor dies down against each other and the substrate during fabrication to prevent warping of the dies. The ferromagnetic layer also balances out a mismatch of coefficients of thermal expansion between layers of the dies, thus further preventing warping of the dies.