Embodiments include semiconductor packages and a method of forming the semiconductor packages. A semiconductor package includes a package substrate with a top surface, a corner portion, and a plurality of solder balls on the top surface of the package substrate. The semiconductor package also includes a pattern on the corner portion of the package substrate. The pattern may have a width substantially equal to a width of the solder balls. The pattern may also include a continuous line having solder materials. The semiconductor package may include a plurality of conductive pads on the package substrate. The conductive pads may be coupled to the pattern. The pattern may have a z-height that is substantially equal to a z-height of the solder balls, and have one or more outer edges, where the outer edges of the pattern are sidewalls. The sidewalls of the pattern may be substantially vertical or tapered sidewalls.

A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

In some embodiments, a display module for implementing an image using an inorganic light emitting device includes a substrate, a thin film transistor (TFT) layer provided on the substrate, a plurality of connection pads provided on the TFT layer, an anisotropic conductive layer provided on the TFT layer, an inorganic light emitting element bonded to the anisotropic conductive layer, and a conductive ball control layer provided in a surrounding area of the plurality of connection pads. The anisotropic conductive layer includes an adhesive layer and a plurality of conductive balls distributed inside the adhesive layer. The inorganic light emitting element includes a plurality of electrodes corresponding to the plurality of connection pads. The conductive ball control layer is configured to restrict the plurality of conductive balls from moving in a direction perpendicular to a bonding direction while the inorganic light emitting element is being bonded to the anisotropic conductive layer.

Aspects of the subject disclosure may include, for example, bonding III-Nitride epitaxial layer(s) to a carrier wafer, wherein the III-Nitride epitaxial layer(s) are grown on a non-native substrate, after the bonding, removing at least a portion of the non-native substrate from the III-Nitride epitaxial layer(s), processing the III-Nitride epitaxial layer(s) to derive an array of III-Nitride islands, establishing a metal layer over the array of III-Nitride islands, resulting in an array of metal-coated III-Nitride islands, arranging the carrier wafer relative to a host wafer to position the array of metal-coated III-Nitride islands on a surface of the host wafer, causing the array of metal-coated III-Nitride islands and the surface of the host wafer to eutectically bond, and removing the carrier wafer to yield an integrated arrangement of III-Nitride islands on the host wafer. Additional embodiments are disclosed.

Aspects of the subject disclosure may include, for example, bonding III-Nitride epitaxial layer(s) to a carrier wafer, wherein the III-Nitride epitaxial layer(s) are grown on a non-native substrate, after the bonding, removing at least a portion of the non-native substrate from the III-Nitride epitaxial layer(s), processing the III-Nitride epitaxial layer(s) to derive an array of III-Nitride islands, establishing a metal layer over the array of III-Nitride islands, resulting in an array of metal-coated III-Nitride islands, arranging the carrier wafer relative to a host wafer to position the array of metal-coated III-Nitride islands on a surface of the host wafer, causing the array of metal-coated III-Nitride islands and the surface of the host wafer to eutectically bond, and removing the carrier wafer to yield an integrated arrangement of III-Nitride islands on the host wafer. Additional embodiments are disclosed.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

In one example, a semiconductor device comprises an electronic component comprising a component face side, a component base side, a component lateral side connecting the component face side to the component base side, and a component port adjacent to the component face side, wherein the component port comprises a component port face. A clip structure comprises a first clip pad, a second clip pad, a first clip leg connecting the first clip pad to the second clip pad, and a first clip face. An encapsulant covers portions of the electronic component and the clip structure. The encapsulant comprises an encapsulant face, the first clip pad is coupled to the electronic component, and the component port face and the first clip face are exposed from the encapsulant face. Other examples and related methods are also disclosed herein.

A semiconductor device according to embodiments includes a first base material having a first side surface, a first semiconductor chip provided above the first base material, a first insulating plate provided between the first base material and the first semiconductor chip, a first metal plate provided between the first insulating plate and the first semiconductor chip, a first bonding material provided between the first metal plate and the first semiconductor chip, the first bonding material bonding the first metal plate and the first semiconductor chip, a second bonding material provided between the first base material and the first insulating material, the second bonding material bonding the first base material and the first insulating plate, a second base material having a second side surface, a second semiconductor chip provided above the second base material, a second insulating plate provided between the second base material and the second semiconductor chip, a second metal plate provided between the second insulating plate and the second semiconductor chip, a third bonding material provided between the second metal plate and the second semiconductor chip, the third bonding material bonding the second metal plate and the second semiconductor chip, a fourth bonding material provided between the second base material and the second insulating plate, the fourth bonding material bonding the second base material and the second insulating plate, and a first base bonding portion provided between the second side surface and the first side surface and bonded to the first side surface and the second side surface.