A method for fastening a semiconductor chip on a substrate and an electronic component are disclosed. In an embodiment a method includes providing a semiconductor chip, applying a solder metal layer sequence on the semiconductor chip, providing a substrate, applying a metallization layer sequence on the substrate, applying the semiconductor chip on the substrate via the solder metal layer sequence and the metallization layer sequence and heating the applied semiconductor chip on the substrate for fastening the semiconductor chip on the substrate. The solder metal layer may include a first metallic layer comprising an indium-tin alloy, a barrier layer arranged above the first metallic layer and a second metallic layer comprising gold arranged between the barrier layer and the semiconductor chip, wherein an amount of substance of the gold in the second metallic layer is greater than an amount of substance of tin in the first metallic layer.

A platform for hermetic heterogeneous integration of passive and active electronic components is provided herein. The platform can include a substrate that provides a hermetic electrical interconnection between integrated circuits and passive devices, such as resistors, capacitors, and inductors. Such substrates can be formed of a dielectric, such as a ceramic, and include electrical interconnects and can further include one or more passive devices. The substrate can include one or more cavities, at least a primary cavity dimensioned to receive an active device and one or more secondary cavities can be included for secondary connector pads for interfacing with the active and passive devices and which can be separately hermetically sealed. The substrate can include a multi-coil inductor defined within alternating layers of the substrate within sidewalls that surround the primary cavity to minimize size of the device package while optimizing the size of the coil.

A platform for hermetic heterogeneous integration of passive and active electronic components is provided herein. The platform can include a substrate that provides a hermetic electrical interconnection between integrated circuits and passive devices, such as resistors, capacitors, and inductors. Such substrates can be formed of a dielectric, such as a ceramic, and include electrical interconnects and can further include one or more passive devices. The substrate can include one or more cavities, at least a primary cavity dimensioned to receive an active device and one or more secondary cavities can be included for secondary connector pads for interfacing with the active and passive devices and which can be separately hermetically sealed. The substrate can include a multi-coil inductor defined within alternating layers of the substrate within sidewalls that surround the primary cavity to minimize size of the device package while optimizing the size of the coil.

A semiconductor device package includes a package substrate having a die attach region, a silicon carbide (SiC) substrate having a first surface including a semiconductor device layer thereon and a second surface that is opposite the first surface, and a die attach metal stack. The die attach metal stack includes a sputtered die attach material layer that attaches the second surface of the SiC substrate to the die attach region of the package substrate, where the sputtered die attach material layer comprises a void percent of about 15% or less. The sputtered die attach material layer may be formed using a sputter gas including at least one of krypton (Kr), xenon (Xe), or radon (Rn). The die attach metal stack may further include a metal interlayer that prevent contacts with a first barrier metal layer during a phase transition of the die attach material layer.

A semiconductor package includes a substrate, first to third semiconductor chips disposed on the substrate, first to third heat transfer components, first and second heat spreaders, and a trench. The first semiconductor chip is between the second and third semiconductor chips. The first to third heat transfer components are disposed on the semiconductor chips, respectively. The first heat spreader is formed on the first to third heat transfer components. The second heat spreader protrudes from the first heat spreader. The trench is formed on the second heat spreader. The second heat spreader includes first and second side units spaced apart with the trench between. A distance between an outer surface of an uppermost part of the first side unit and an outer surface of an uppermost part of the second side unit is smaller than a width of an upper surface of the first semiconductor chip.

Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Embodiments include semiconductor packages and methods of forming such packages. A semiconductor package includes a die on a package substrate, an integrated heat spreader (IHS) on the package substrate and above the die, and a solder thermal interface material (STIM) coupling the die to the IHS. The semiconductor package includes a low-temperature solder (LTS) paste comprising an alloy of tin and bismuth (Bi), and the LTS paste on a bottom surface of the package substrate having a ball grid array. The LTS paste may have a weight percentage of Bi greater than 35% and a melting point less than or equal to a melting point of the STIM, where the STIM includes indium. The weight percentage of Bi may be between approximately 35% to 58%. The semiconductor package may include a solder ball coupling the LTS paste on the package substrate to the LTS paste on a second package substrate.

Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

Semiconductor module having a first substrate, a second substrate and a spacer distancing the substrates from each other, wherein the spacer is formed by at least one elastic shaped metal body.

In an embodiment a method includes providing a semiconductor chip, applying a solder metal layer sequence on the semiconductor chip, providing a substrate, applying a metallization layer sequence on the substrate, applying the semiconductor chip on the substrate via the solder metal layer sequence and the metallization layer sequence and heating the applied semiconductor chip on the substrate for fastening the semiconductor chip on the substrate, wherein the solder metal layer sequence includes a first metallic layer including an indium-tin alloy, a barrier layer arranged above the first metallic layer, and a second metallic layer having gold arranged between the barrier layer and the semiconductor chip, and wherein the indium-tin alloy has the following formula: In.sub.xSn.sub.1-x with 0.04≤x≤0.2.